UPA811T

DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA 1 0.65 0.65 1.3 |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC4228) 2.0±0.2 2 3 ORDERING INFORMATION 0.9±0.1 PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.7 µPA811T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONFIGURATION (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 20 10 1.5 35 150 in 1 element 200 in 2 elements Note 150 –65 to +150 UNIT V V V mA mW 6 Q1 1 5 0 to 0.1 4 Q2 2 3 PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Emitter (Q1) 2. Base (Q2) 6. Base (Q1) 3. Collector (Q2) Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. P11464EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 0.15 –0 +0.1 µPA811T 4 5 6 • High Gain 0.2 –0 +0.1 XY µPA811T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure hFE Ratio SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF hFE1/hFE2 CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 mANote 1 80 5.5 MHzNote 2 5.5 7.5 1.9 0.85 3.2 8.0 0.7 MIN. TYP. MAX. 1.0 1.0 200 GHz pF dB dB UNIT µA µA VCE = 3 V, IC = 5 mA VCB = 3 V, IE = 0, f = 1 VCE = 3 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 5 mA A smaller value among hFE of hFE1 = Q1, Q2 A Larger value among hFE of hFE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank Marking hFE Value FB 44R 80 to 160 GB 45R 125 to 250 TYPICAL CHARACTERISTICS (TA = 25 °C) PT - TA Characteristics 25 IC - VCE Characteristics Total Power Dissipation PT (mW) Free Air 160 µ A Collector Current IC (mA) 200 20 2 El em 15 en A 140 µ 120 µ A 100 µ A 80 µ A 100 Pe ts rE in lem To en ta l 10 60 µ A 40 µ A IB = 20 µ A t 5 0 50 100 150 0 5 Collector to Emitter Voltage VCE (V) 1.0 Ambient Temperature TA (°C) IC - VBE Characteristics 20 VCE = 3 V 200 VCE = 3 V h FE - IC Characteristics Collector Current IC (mA) DC Current Gain hFE 100 10 50 20 0 0.5 Base to Emitter Voltage VBE (V) 1.0 10 0.5 1 5 10 50 Collector Current IC (mA) 2 µPA811T Cre - VCB Characteristics 5.0 f = 1 MHz 2.0 1.0 0.5 Gain Bandwidth Product fT (GHz) Feed-back Capacitance Cre (pF) fT - IC Characteristics 10 VCE = 3 V f = 2 GHz 8 6 4 0.2 0.1 2 0 0.5 1 2 5 10 20 50 1 5 10 50 Collector to Base Voltage VCB (V) Collector Current IC (mA) l S21e l 2 - IC Characteristics 12 Insertion Power Gain | S21e | 2 (dB) Insertion Power Gain | S21e | 2 (dB) | S21e | 2 - f Characteristics 25 VCE = 3 V IC = 5 mA 20 VCE = 3 V f = 2 GHz 8 15 10 4 5 0 0.1 0 0.5 1 5 10 50 0.5 1.0 2.0 5.0 Collector Current IC (mA) Frequency f (GHz) NF - IC Characteristics 5 VCE = 3 V f = 2 GHz 4 Noise Figure (dB) 3 2 1 0 0.5 1 5 10 50 Collector Current IC (mA) 3 µPA811T S-PARAMETERS V CE = 3 V , I C = 1 m A FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG 0.969 0.957 0.909 0.909 0.895 0.876 0.821 0.750 0.710 0.673 0.658 0.625 0.573 0.537 0.505 0.479 0.448 0.424 0.399 0.389 S 11 ANG –7.9 –14.7 –21.2 –27.4 –33.5 –42.4 –49.4 –56.0 –60.5 –65.3 –72.2 –78.4 –85.4 –91.2 –97.1 –103.2 –110.2 –115.4 –120.9 –127.2 MAG 3.625 3.405 3.366 3.218 3.147 3.150 3.040 2.966 2.779 2.640 2.532 2.504 2.427 2.350 2.305 2.210 2.152 2.101 2.034 1.987 S 21 ANG 172.0 165.9 156.4 153.3 144.8 141.2 132.0 126.2 119.6 114.1 110.6 105.6 102.7 96.2 92.3 88.3 83.6 81.0 75.9 71.7 MAG 0.016 0.031 0.046 0.059 0.071 0.083 0.092 0.105 0.110 0.119 0.124 0.129 0.138 0.137 0.143 0.142 0.148 0.155 0.157 0.165 S 12 ANG 85.0 80.7 73.3 70.9 66.4 65.6 60.7 58.0 55.8 51.5 51.0 48.2 46.2 44.5 42.0 43.8 41.9 42.9 40.4 38.1 MAG 0.999 0.989 0.961 0.955 0.913 0.913 0.896 0.888 0.869 0.840 0.805 0.758 0.738 0.706 0.709 0.693 0.689 0.678 0.650 0.631 S 22 ANG –3.6 –6.4 –10.4 –12.4 –14.2 –16.7 –18.0 –21.1 –23.3 –27.3 –28.9 –30.8 –31.1 –31.5 –32.1 –32.6 –35.3 –36.5 –39.1 –40.5 V CE = 3 V , I C = 3 m A FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG 0.903 0.856 0.763 0.713 0.656 0.602 0.536 0.466 0.412 0.374 0.346 0.315 0.285 0.263 0.245 0.230 0.214 0.202 0.192 0.193 S 11 ANG –14.0 –25.6 –36.2 –44.7 –52.3 –62.4 –70.5 –77.7 –82.8 –87.8 –93.4 –100.2 –106.7 –112.8 –119.7 –126.7 –135.0 –141.2 –147.9 –154.2 MAG 8.928 8.248 7.535 6.882 6.233 5.854 5.342 4.989 4.471 4.123 3.871 3.667 3.575 3.367 3.214 3.038 2.918 2.821 2.696 2.613 S 21 ANG 165.7 154.2 141.5 135.1 125.9 121.4 112.1 106.9 100.4 95.3 92.3 88.1 86.0 81.3 78.3 75.5 72.3 69.9 65.8 61.8 MAG 0.016 0.028 0.042 0.051 0.058 0.067 0.072 0.080 0.084 0.091 0.095 0.100 0.108 0.111 0.118 0.121 0.129 0.137 0.143 0.152 S 12 ANG 89.5 74.6 68.0 65.0 61.2 61.4 58.8 57.9 58.0 55.7 56.9 55.9 55.8 55.6 54.5 57.3 55.9 57.2 54.8 53.2 MAG 0.985 0.951 0.889 0.851 0.785 0.764 0.733 0.717 0.696 0.669 0.639 0.603 0.587 0.566 0.570 0.561 0.559 0.553 0.532 0.515 S 22 ANG –6.5 –11.2 –16.4 –18.6 –20.1 –21.7 –21.9 –23.8 –25.0 –27.6 –28.3 –29.2 –28.7 –28.3 –28.2 –28.3 –30.5 –31.5 –33.7 –34.7 4 µPA811T S-PARAMETERS V CE = 3 V , I C = 5 m A FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG 0.848 0.766 0.647 0.575 0.506 0.450 0.393 0.335 0.290 0.260 0.236 0.213 0.193 0.178 0.168 0.161 0.153 0.148 0.143 0.149 S 11 ANG –18.5 –33.1 –45.5 –54.3 –62.0 –71.5 –79.6 –86.5 –91.7 –97.0 –102.5 –109.7 –116.7 –123.3 –131.8 –139.7 –149.2 –156.1 –163.5 –169.9 MAG 12.800 11.314 9.862 8.611 7.527 6.847 6.116 5.624 4.970 4.521 4.202 3.947 3.792 3.468 3.408 3.218 3.085 2.980 2.840 2.752 S 21 ANG 161.3 146.2 132.5 125.0 116.3 112.2 103.6 99.2 93.3 88.7 86.2 82.4 80.3 76.1 73.8 71.4 68.7 66.4 62.7 58.8 MAG 0.015 0.026 0.038 0.044 0.052 0.058 0.064 0.072 0.076 0.084 0.088 0.094 0.102 0.106 0.115 0.118 0.128 0.137 0.143 0.153 S 12 ANG 78.5 71.6 66.4 64.0 62.0 63.0 61.6 61.8 62.4 60.4 62.0 61.2 61.3 61.1 60.2 62.3 60.8 61.9 59.4 57.6 MAG 0.974 0.913 0.829 0.778 0.712 0.691 0.666 0.652 0.637 0.616 0.592 0.561 0.550 0.532 0.538 0.533 0.532 0.527 0.507 0.492 S 22 ANG –8.3 –14.0 –19.0 –20.4 –20.9 –21.5 –21.0 –22.2 –23.1 –25.3 –25.7 –26.4 –25.7 –25.1 –25.1 –25.2 –27.5 –28.5 –30.7 –31.8 5 µPA811T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2