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UPA814TF

UPA814TF

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    UPA814TF - NPN SILICON HIGH FREQUENCY TRANSISTOR - NEC

  • 数据手册
  • 价格&库存
UPA814TF 数据手册
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high HIGH COLLECTOR CURRENT: IC MAX = 100 mA 0.65 2.0 ± 0.2 1.3 2 1 UPA814TF OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 6 0.22 - 0.05 (All Leads) 5 +0.10 DESCRIPTION The UPA814TF contains two NE688 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascade LNAs and other similar applications. 3 4 0.6 ± 0.1 0.45 0.13 ±0.05 0 ~ 0.1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 9 6 2 100 110 200 150 -65 to +150 PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. TJ TSTG Note: 1.Operation in excess of any one of these parameters may result in permanent damage. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT Cre |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain1 at VCE = 1 V, IC = 3 mA GHz pF dB dB 0.85 Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 UNITS µA µA 80 110 9.0 0.75 6.5 1.5 0.85 MIN UPA814TF TS06 TYP MAX 0.1 0.1 160 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA814TF-T1, 3K per reel. California Eastern Laboratories EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE
UPA814TF 价格&库存

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