UPA827TF-T1-A

PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA827TF FEATURES • HIGH GAIN WITH LOW OPERATING CURRENT: |S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA • • SMALL PACKAGE STYLE: 2 NE686 die in a 2 mm x 1.25 mm x 0.6 mm package Pb-FREE OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0.65 2.0 ± 0.2 1.3 1 6 0.22 - 0.05 (All Leads) +0.10 2 5 3 4 DESCRIPTION The UPA827TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. This device is suitable for low voltage/low current, low noise applications, and its high fT makes it an excellent choice for portable wireless applications. The thinner package style allows for higher density designs. 0.6 ± 0.1 0.45 0.13 ± 0.05 0 ~ 0.1 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT fT Cre |S21E|2 |S21E|2 NF NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 2 V, IC = 7 mA Gain Bandwidth (1) at VCE = 2 V, IC = 7 mA, f = 2 GHz Gain Bandwidth (2) at VCE = 1 V, IC = 5 mA, f = 2 GHz Feedback Capacitance2 at VCB = 2 V, IE = 0, f = 1 MHz Insertion Power Gain (1) at VCE = 2 V, IC =7 mA, f = 2 GHz Insertion Power Gain (2) at VCE = 1 V, IC =5 mA, f = 2 GHz Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz hFE ratio, VCE = 2 V, Ic = 7 mA hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. GHz GHz pF dB dB dB dB 0.85 7.5 7 UNITS μA μA 70 10 8.5 13 12 0.4 9 8.5 1.5 1.5 1.0 2 2 0.6 MIN UPA827TF TS06 TYP MAX 0.1 0.1 140 CaliforniaEasternLaboratories UPA827TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Element 2 Elements Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 5 3 2 10 30 60 150 -65 to +150 TJ TSTG Note: 1.Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 50 VCE = 2 V COLLECTOR CURRENT vs. DC BASE VOLTAGE Total Power Dissipation, PT (mW) 2 elements in total 60mW Collector Current, lc (mA) 40 30 50 Per element 30mW 20 10 0 50 100 150 0 0.5 1.0 Ambient Temperature, TA (°C) DC Base Voltage, VBE (V) COLLECTOR CURRENT vs. EMITTER VOLTAGE 10 100 μA 80 μA 500 DC CURRENT GAIN vs. COLLECTOR CURRENT Collector Current, lc (mA) 8 60 μA 6 40 μA 4 lB = 20 μA 2 DC Current Gain,hFE 200 100 VCE = 2 V 50 VCE = 1 V 20 10 0 1.0 2.0 3.0 1 2 5 10 20 50 100 Collector to Emitter Voltage, VCE (V) Collector Current, lc (mA) UPA827TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 10 INSERTION POWER GAIN vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) VCE = 2 V Insertion Power Gain, |S21E|2 (dB) f = 2 GHz VCE = 2 V VCE = 1 V VCE = 1 V 10 5 5 0 1 2 3 5 7 10 20 1 2 3 5 7 10 20 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT 3 f = 2 GHz FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.8 Feedback Capacitance, CRE (pF) f = 1 MHz Noise Figure, NF (dB) 0.6 2 VCE = 1 V 0.4 VCE = 2 V 0.2 1 0 1 2 3 5 7 10 0 2.0 4.0 6.0 8.0 10.0 Collector Current, lc (mA) Collector to Base Voltage, VCB (V) UPA827TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 2 V, IC = 1 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.97 0.96 0.95 0.94 0.92 0.90 0.88 0.86 0.83 0.80 0.74 0.63 0.56 0.46 0.27 0.20 S11 ANG -3.79 -7.62 -11.53 -15.36 -19.27 -23.25 -27.31 -31.26 -35.44 -39.13 -47.66 -61.74 -70.44 -86.95 -120.95 -171.57 MAG 2.37 2.35 2.40 2.38 2.39 2.38 2.37 2.37 2.37 2.33 2.32 2.31 2.23 2.16 2.03 1.83 S21 ANG 173.89 168.24 162.95 157.51 152.51 147.98 143.24 139.10 134.35 129.91 121.47 109.55 101.17 90.13 70.78 54.75 MAG 0.02 0.03 0.05 0.06 0.08 0.09 0.10 0.12 0.13 0.14 0.16 0.19 0.20 0.22 0.24 0.25 S12 ANG 86.19 83.85 80.08 77.05 74.32 71.00 68.16 65.24 62.59 59.95 55.12 48.35 44.53 38.96 32.87 27.71 MAG 0.99 0.99 0.98 0.97 0.96 0.95 0.93 0.91 0.89 0.86 0.82 0.75 0.70 0.64 0.54 0.46 S22 ANG -3.35 -6.52 -9.88 -13.07 -16.16 -19.49 -22.31 -25.62 -28.16 -31.26 -36.57 -44.21 -48.82 -55.67 -65.96 -77.11 Q2 VCE = 2 V, IC = 1 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.97 0.96 0.95 0.94 0.92 0.91 0.89 0.86 0.84 0.82 0.76 0.67 0.61 0.53 0.38 0.30 S11 ANG -3.76 -7.50 -11.38 -15.24 -19.09 -23.00 -26.94 -30.85 -34.90 -38.48 -46.39 -59.42 -67.25 -81.17 -105.57 -134.37 MAG 2.38 2.35 2.39 2.38 2.38 2.38 2.37 2.37 2.37 2.33 2.32 2.32 2.24 2.17 2.05 1.89 S21 ANG 173.74 167.97 162.59 157.14 152.09 147.56 142.82 138.70 133.96 129.63 121.22 109.38 101.17 90.51 71.84 56.05 MAG 0.02 0.03 0.05 0.06 0.08 0.09 0.11 0.12 0.13 0.14 0.16 0.19 0.20 0.22 0.25 0.27 S12 ANG 86.91 83.65 80.52 77.30 74.64 71.39 68.87 65.96 63.53 61.18 56.71 50.94 47.51 42.47 36.57 31.69 MAG 0.99 0.99 0.98 0.97 0.95 0.93 0.91 0.89 0.86 0.84 0.79 0.71 0.65 0.57 0.45 0.34 S22 ANG -3.32 -6.56 -9.72 -12.95 -15.89 -19.16 -21.99 -25.12 -27.55 -30.48 -35.31 -42.55 -47.09 -53.85 -64.55 -77.62 UPA827TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 2 V, IC = 3 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.90 0.88 0.85 0.81 0.76 0.71 0.66 0.61 0.55 0.50 0.40 0.27 0.20 0.11 0.07 0.16 S11 ANG -6.40 -12.71 -19.07 -25.04 -31.15 -36.82 -42.59 -48.04 -53.11 -57.87 -66.68 -79.47 -88.30 -108.97 158.31 118.39 MAG 6.38 6.21 6.16 6.00 5.84 5.65 5.49 5.32 5.12 4.92 4.51 3.95 3.60 3.18 2.66 2.29 S21 ANG 170.12 161.60 153.85 146.67 140.06 134.24 128.01 122.51 116.88 111.77 102.30 90.17 83.36 74.09 60.75 48.87 MAG 0.02 0.03 0.04 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.12 0.15 0.16 0.18 0.21 0.24 S12 ANG 84.82 80.22 76.19 72.09 69.59 66.27 64.30 61.95 60.14 59.19 56.73 53.86 52.11 49.45 45.49 40.58 MAG 0.98 0.96 0.93 0.90 0.85 0.81 0.77 0.73 0.70 0.67 0.61 0.54 0.50 0.45 0.38 0.32 S22 ANG -5.79 -11.39 -16.48 -21.27 -25.20 -29.17 -32.16 -35.33 -37.63 -39.81 -43.76 -49.15 -52.50 -57.74 -64.84 -80.67 Q2 VCE = 2 V, IC = 3 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.90 0.88 0.85 0.82 0.77 0.73 0.68 0.63 0.58 0.53 0.45 0.35 0.30 0.24 0.17 0.16 S11 ANG -6.34 -12.58 -18.91 -24.80 -30.57 -36.24 -41.66 -46.88 -51.46 -55.76 -63.47 -74.44 -82.13 -95.31 -125.55 -165.06 MAG 6.39 6.20 6.14 5.97 5.79 5.59 5.41 5.23 5.02 4.80 4.39 3.84 3.52 3.13 2.66 2.31 S21 ANG 169.68 160.94 153.06 145.83 139.18 133.26 127.08 121.55 116.05 111.07 102.03 90.52 84.07 74.96 61.81 49.68 MAG 0.02 0.03 0.04 0.06 0.07 0.08 0.09 0.10 0.11 0.11 0.13 0.15 0.17 0.19 0.23 0.27 S12 ANG 84.84 80.33 76.31 73.00 70.49 67.69 65.74 63.80 62.24 61.38 59.31 56.69 54.93 52.36 48.10 43.08 MAG 0.98 0.96 0.92 0.88 0.83 0.79 0.74 0.70 0.66 0.63 0.57 0.49 0.44 0.38 0.29 0.20 S22 ANG -5.82 -11.25 -16.31 -20.79 -24.41 -28.04 -30.52 -33.20 -35.07 -36.80 -39.71 -43.54 -46.16 -49.40 -56.28 -66.61 UPA827TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 2 V, IC = 7 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.79 0.74 0.67 0.59 0.52 0.45 0.38 0.33 0.28 0.24 0.17 0.08 0.04 0.03 0.12 0.21 S11 ANG -10.59 -20.57 -30.03 -38.34 -45.42 -51.28 -56.02 -59.86 -63.19 -65.89 -70.37 -78.15 -88.25 118.89 102.62 98.26 MAG 12.26 11.58 10.98 10.23 9.42 8.61 7.87 7.22 6.63 6.12 5.29 4.37 3.92 3.40 2.80 2.38 S21 ANG 165.48 153.36 142.68 133.14 124.76 117.78 111.39 105.98 101.18 96.90 89.57 80.22 74.77 67.28 55.99 45.77 MAG 0.01 0.03 0.04 0.05 0.06 0.07 0.07 0.08 0.09 0.10 0.11 0.13 0.15 0.17 0.21 0.24 S12 ANG 83.48 77.65 73.57 70.32 68.50 66.94 65.98 65.26 64.24 63.87 62.59 60.52 58.88 56.41 51.57 45.88 MAG 0.96 0.91 0.84 0.77 0.72 0.67 0.62 0.59 0.56 0.53 0.49 0.44 0.42 0.38 0.32 0.27 S22 ANG -8.71 -16.50 -22.47 -27.22 -30.47 -33.23 -35.02 -36.80 -38.15 -39.31 -41.59 -45.40 -48.34 -53.28 -63.74 -77.81 Q2 VCE = 2 V, IC = 7 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.79 0.74 0.68 0.60 0.53 0.47 0.42 0.37 0.34 0.30 0.25 0.19 0.16 0.12 0.10 0.14 S11 ANG -10.37 -20.08 -29.16 -36.85 -43.25 -48.47 -52.50 -56.05 -59.04 -61.69 -66.62 -75.77 -84.55 -101.92 -148.42 170.66 MAG 12.25 11.49 10.81 10.00 9.14 8.31 7.57 6.92 6.36 5.87 5.07 4.24 3.82 3.34 2.79 2.41 S21 ANG 164.70 152.30 141.44 131.96 123.66 116.90 110.84 105.69 101.15 97.08 90.12 81.19 75.92 68.51 57.44 46.77 MAG 0.01 0.03 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.12 0.14 0.16 0.18 0.23 0.27 S12 ANG 82.96 78.29 74.48 71.50 70.09 68.61 67.97 67.35 66.54 66.31 64.95 63.09 61.07 58.41 53.55 47.51 MAG 0.95 0.90 0.82 0.76 0.69 0.64 0.60 0.56 0.53 0.51 0.46 0.41 0.37 0.32 0.25 0.17 S22 ANG -8.66 -16.20 -21.74 -25.90 -28.46 -30.60 -31.88 -32.88 -33.54 -34.05 -35.02 -36.74 -38.42 -40.40 -45.38 -52.42 ORDERING INFORMATION PART NUMBER UPA827TF-T1-A QUANTITY 3000 PACKAGING Tape & Reel, Pb-Free 3/06/2006 A Business Partner of NEC Compound Semiconductor Devices, Ltd.