UPA832TF

PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF FEATURES • LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA • HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2: |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 10 mA • • 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE856, Q2: NE685) OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0.65 2.0 ± 0.2 1.3 1 6 0.22 - 0.05 (All Leads) +0.10 2 5 3 4 0.6 ± 0.1 0.45 0 ~ 0.1 0.13 ± 0.05 DESCRIPTION The UPA832TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device for high dynamic range with excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE Q1 fT Cre |S21E|2 NF ICBO IEBO hFE Q2 fT Cre2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 10 mA GHz pF dB dB 7 Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz GHz pF dB dB µA µA 75 12 0.4 8.5 1.5 2.5 0.7 7 UNITS µA µA 100 3.0 4.5 0.7 9 1.2 2.5 0.1 0.1 150 1.5 MIN UPA832TF TS06 TYP MAX 1 1 145 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA832TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS Q1 20 12 3 100 Q2 9 6 2 30 150 150 2002 150 150 -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Total Power Dissipation, PT (mW) Free Air Q2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air 2 elements in total 200 2 elements in total 200 Q1 when using 1 element Q2 when using 1 element Q1 when using 2 elements 100 Q2 when using 2 elements 100 0 50 100 150 0 50 100 150 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 20 VCE = 3 V 40 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V Collector Current, lc (mA) Collector Current, lc (mA) 0.5 1.0 30 10 20 10 0 0 0.5 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) UPA832TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 lB=160 µA 140 µA 60 500 µA 50 Q2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) 20 120 µA 15 100 µA 80 µA 10 60 µA 40 µA 5 20 µA Collector Current, lc (mA) 400 µA 40 300 µA 30 200 µA 20 lB=100 µA 10 0 5 10 0 1 2 3 4 5 6 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 3 V 200 DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current, Gain hFE DC Current, Gain hFE 100 5V VCE = 3 V 100 50 20 10 0.5 5 10 50 0 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Current, lc (mA) Collector Current, lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 14 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f = 2 GHz 5V Gain Bandwidth Product, fT (GHz) Gain Bandwidth Product, fT (GHz) VCE = 3 V f = 1.0 GHz 10 12 10 3V 5 8 VCE = 1 V 6 2 4 1 0.5 1 5 10 50 2 0.5 1 2 5 10 20 50 Collector Current, lc (mA) Collector Current, lc (mA) UPA832TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 INSERTION POWER GAIN vs. COLLECTOR CURRENT 15 10 Q2 INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21E|2 (dB) f = 2 GHz 5V 8 3V Insertion Power Gain, |S21E|2 (dB) VCE = 3 V f = 1.0 GHz 10 6 VCE = 1 V 5 4 0 0.5 1 5 10 50 100 2 0.5 2 5 10 20 50 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT 6 VCE = 3 V f = 1 GHz 4 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz Noise Figure, NF (dB) Noise Figure, NF (dB) 3 4 2 2 1 0 0.5 1.0 5.0 10 50 100 0 0.5 1 2 5 10 20 50 Collector Current, lc (mA) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5.0 f = 1 MHz FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 Feedback Capacitance, Cre (pF) Feedback Capacitance, Cre (pF) f = 1 MHz 2.0 0.5 1.0 0.4 0.5 0.3 0.2 0.1 1 2 5 10 20 50 0.2 0.5 1 2 5 10 20 Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) UPA832TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 INSERTION POWER GAIN vs. FREQUENCY 24 Insertion Power Gain, |S21E|2 (dB) VCE = 3 V lc = 7 mA 20 16 12 8 4 0 0.1 0.2 0.5 1.0 2.0 5.0 Frequency, f (GHz) TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.97 0.94 0.90 0.86 0.82 0.79 0.76 0.74 0.72 0.71 0.70 0.71 0.72 0.75 0.78 0.81 S11 ANG -20.45 -40.17 -59.57 -77.29 -94.54 -110.15 -124.06 -136.61 -148.19 -158.16 -175.72 162.88 151.31 136.95 117.97 103.52 MAG 2.38 2.31 2.25 2.10 2.03 1.92 1.80 1.69 1.59 1.48 1.30 1.09 0.97 0.83 0.66 0.54 S21 ANG 162.85 148.19 135.26 123.99 113.53 104.19 95.54 87.82 80.80 74.49 63.28 49.18 41.14 31.08 18.15 10.02 MAG 0.04 0.08 0.11 0.13 0.15 0.16 0.16 0.16 0.16 0.16 0.15 0.13 0.12 0.11 0.13 0.19 S12 ANG 76.56 63.82 52.97 43.63 36.13 29.28 23.65 19.18 15.47 12.65 8.37 7.58 11.56 23.61 45.08 50.48 MAG 0.98 0.94 0.89 0.83 0.78 0.74 0.70 0.67 0.65 0.64 0.61 0.59 0.58 0.57 0.57 0.58 S22 ANG -8.59 -16.05 -22.20 -27.30 -31.16 -34.67 -37.55 -40.06 -42.54 -44.88 -49.79 -57.73 -64.34 -74.83 -95.23 -118.13 Q2 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.98 0.97 0.95 0.93 0.90 0.87 0.84 0.81 0.77 0.73 0.65 0.54 0.47 0.40 0.33 0.33 S11 ANG -5.93 -11.82 -17.85 -23.59 -29.61 -35.62 -41.49 -47.40 -53.49 -59.00 -71.05 -89.53 -101.29 -120.45 -153.17 177.01 MAG 2.43 2.41 2.42 2.39 2.38 2.37 2.34 2.32 2.32 2.26 2.21 2.13 2.02 1.90 1.71 1.54 S21 ANG 171.79 164.40 157.59 151.04 144.91 139.49 133.87 128.66 123.12 118.06 108.31 94.49 86.01 74.87 57.60 42.57 MAG 0.02 0.04 0.05 0.07 0.09 0.10 0.11 0.12 0.13 0.14 0.16 0.17 0.18 0.19 0.21 0.23 S12 ANG 85.64 80.86 76.45 72.26 68.73 64.78 61.52 58.06 55.30 52.86 48.61 43.82 41.68 39.57 38.43 38.11 MAG 0.99 0.99 0.97 0.95 0.93 0.90 0.87 0.85 0.82 0.78 0.73 0.66 0.61 0.55 0.46 0.38 S22 ANG -3.75 -7.53 -11.10 -14.56 -17.91 -21.19 -23.71 -26.91 -29.05 -31.52 -35.51 -41.12 -44.56 -49.87 -59.91 -74.21 UPA832TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.90 0.83 0.75 0.70 0.65 0.62 0.60 0.59 0.59 0.59 0.59 0.61 0.63 0.66 0.70 0.75 S11 ANG -29.42 -56.61 -82.38 -104.35 -122.97 -138.09 -150.60 -161.35 -170.46 -178.60 167.50 150.72 141.52 130.09 114.27 102.28 MAG 6.73 6.15 5.66 5.08 4.52 4.00 3.57 3.21 2.90 2.65 2.25 1.82 1.61 1.38 1.10 0.91 S21 ANG 156.08 138.83 124.38 112.82 102.90 94.98 88.01 82.00 76.74 71.87 62.99 51.53 44.61 35.44 21.83 10.82 MAG 0.04 0.07 0.09 0.10 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.13 0.14 0.15 0.19 0.22 S12 ANG 70.94 55.92 46.12 39.45 35.38 32.50 30.78 30.02 29.88 30.03 31.42 34.65 36.98 39.97 42.08 41.10 MAG 0.93 0.82 0.70 0.61 0.54 0.49 0.45 0.42 0.40 0.38 0.36 0.33 0.32 0.31 0.31 0.33 S22 ANG -16.82 -29.40 -37.28 -42.73 -45.93 -48.61 -50.55 -52.19 -54.08 -55.78 -59.72 -67.05 -73.46 -84.11 -105.22 -128.59 Q2 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.93 0.90 0.84 0.79 0.72 0.66 0.59 0.53 0.48 0.43 0.34 0.26 0.22 0.19 0.19 0.24 S11 ANG -9.39 -18.39 -27.39 -35.83 -44.06 -51.67 -58.86 -65.57 -71.57 -77.20 -87.82 -104.50 -116.75 -137.84 -174.18 159.82 MAG 6.76 6.46 6.32 6.06 5.82 5.54 5.28 5.01 4.72 4.45 3.95 3.37 3.06 2.71 2.29 1.99 S21 ANG 166.53 155.80 146.52 138.21 130.60 123.94 117.07 111.07 105.46 100.46 91.74 80.85 74.57 66.02 53.07 41.14 MAG 0.02 0.03 0.05 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.13 0.15 0.16 0.18 0.22 0.26 S12 ANG 82.60 76.86 71.65 67.47 64.58 61.95 60.46 59.12 57.98 57.39 56.54 55.21 54.46 53.01 49.89 45.56 MAG 0.98 0.94 0.89 0.83 0.77 0.72 0.68 0.64 0.60 0.57 0.52 0.46 0.43 0.38 0.30 0.22 S22 ANG -7.24 -13.64 -18.91 -23.49 -26.46 -29.65 -31.43 -33.17 -34.36 -35.31 -37.08 -39.70 -41.65 -44.95 -52.82 -65.40 UPA832TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.84 0.74 0.65 0.60 0.57 0.55 0.54 0.54 0.54 0.54 0.55 0.58 0.60 0.63 0.68 0.72 S11 ANG -37.26 -70.72 -100.14 -122.73 -139.98 -153.16 -163.95 -173.01 179.14 172.20 160.12 145.43 137.23 126.82 112.54 101.25 MAG 10.52 9.17 7.97 6.76 5.74 4.95 4.33 3.85 3.44 3.13 2.63 2.12 1.88 1.60 1.28 1.06 S21 ANG 150.99 131.67 116.47 105.34 96.73 89.92 84.13 78.92 74.44 70.19 62.35 51.94 45.70 37.07 23.75 12.85 MAG 0.04 0.06 0.07 0.08 0.09 0.09 0.10 0.10 0.11 0.11 0.12 0.14 0.15 0.17 0.21 0.24 S12 ANG 67.19 52.38 44.81 41.17 39.62 38.83 38.89 39.22 40.21 40.98 42.12 43.44 44.06 43.80 41.92 38.40 MAG 0.89 0.72 0.58 0.48 0.42 0.37 0.34 0.31 0.30 0.28 0.26 0.23 0.22 0.22 0.22 0.25 S22 ANG -23.52 -38.66 -46.62 -51.47 -54.25 -56.48 -58.22 -59.93 -61.82 -63.63 -68.02 -76.52 -84.21 -96.22 -120.22 -144.01 Q2 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.89 0.83 0.75 0.66 0.57 0.50 0.43 0.37 0.33 0.29 0.23 0.17 0.15 0.13 0.15 0.22 S11 ANG -12.31 -23.63 -34.70 -44.55 -53.23 -60.42 -66.51 -71.94 -76.60 -81.19 -90.41 -106.89 -120.69 -145.48 176.33 153.43 MAG 10.46 9.75 9.25 8.62 7.96 7.27 6.64 6.08 5.57 5.15 4.45 3.70 3.33 2.92 2.45 2.12 S21 ANG 162.72 149.86 138.82 129.30 120.72 113.73 107.23 101.84 97.19 92.96 85.71 76.63 71.22 63.46 51.77 40.65 MAG 0.02 0.03 0.04 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.12 0.14 0.16 0.19 0.23 0.27 S12 ANG 81.62 74.55 69.69 66.77 64.98 63.78 63.20 62.73 62.37 62.23 61.60 60.08 58.93 57.05 52.54 47.15 MAG 0.96 0.90 0.81 0.74 0.68 0.62 0.58 0.55 0.52 0.49 0.45 0.40 0.37 0.33 0.26 0.17 S22 ANG -9.77 -17.75 -23.24 -27.15 -29.45 -31.18 -32.03 -32.89 -33.36 -33.76 -34.67 -36.32 -38.02 -40.74 -48.08 -59.19 UPA832TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.79 0.67 0.59 0.55 0.52 0.52 0.51 0.51 0.52 0.52 0.54 0.56 0.58 0.61 0.66 0.71 S11 ANG -44.32 -82.73 -113.49 -134.72 -150.16 -161.98 -171.56 -179.64 173.30 167.06 156.05 142.49 134.85 125.10 111.51 100.68 MAG 13.71 11.45 9.41 7.67 6.37 5.44 4.71 4.17 3.73 3.38 2.83 2.28 2.02 1.72 1.37 1.14 S21 ANG 146.95 126.15 111.03 100.87 93.24 87.80 81.95 77.28 73.14 69.28 61.95 52.20 46.08 37.91 25.17 14.21 MAG 0.04 0.05 0.07 0.07 0.08 0.08 0.09 0.10 0.10 0.11 0.12 0.14 0.16 0.18 0.22 0.25 S12 ANG 64.19 50.70 45.71 44.09 43.89 44.29 44.90 45.68 46.53 47.24 47.51 47.48 47.00 45.50 41.98 37.45 MAG 0.84 0.64 0.49 0.40 0.35 0.31 0.28 0.26 0.24 0.23 0.21 0.19 0.18 0.18 0.19 0.23 S22 ANG -28.71 -44.98 -52.71 -57.18 -59.82 -62.08 -63.86 -65.85 -67.95 -70.01 -75.34 -85.78 -94.72 -108.59 -134.34 -157.18 Q2 VCE = 3 V, IC = 10 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.79 0.67 0.55 0.44 0.37 0.31 0.26 0.23 0.20 0.18 0.14 0.10 0.08 0.09 0.13 0.20 S11 ANG -18.18 -33.75 -46.32 -55.16 -61.11 -65.90 -69.64 -73.22 -76.64 -80.09 -88.42 -107.91 -126.27 -158.61 164.55 146.66 MAG 17.81 15.65 13.67 11.71 10.03 8.70 7.66 6.84 6.18 5.63 4.80 3.94 3.53 3.08 2.57 2.21 S21 ANG 156.05 139.27 125.80 115.64 108.02 102.30 97.45 93.31 89.63 86.38 80.51 72.79 68.12 61.31 50.55 40.11 MAG 0.02 0.03 0.04 0.05 0.06 0.07 0.07 0.08 0.09 0.10 0.12 0.15 0.16 0.19 0.24 0.28 S12 ANG 79.00 72.98 69.74 69.07 68.93 68.67 68.49 68.26 68.18 67.74 66.68 64.56 62.66 59.98 54.48 48.32 MAG 0.92 0.80 0.69 0.61 0.56 0.52 0.49 0.46 0.44 0.43 0.40 0.36 0.33 0.29 0.22 0.14 S22 ANG -14.07 -22.91 -27.06 -28.96 -29.47 -29.62 -29.55 -29.57 -29.61 -29.60 -29.99 -31.58 -33.11 -35.72 -42.08 -51.14 UPA832TF BUILT-IN TRANSISTORS Q1 3-pin small mini mold part No. NE85630 Q2 NE68530 The UPA835TF features the Q1 and Q2 in inverted positions. ORDERING INFORMATION PART NUMBER UPA832TF-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE