UPC1688G-T1

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1688G 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC DESCRIPTION The µPC1688G is a silicon monolithic integrated circuit especially designed as a flat gain and wide band amplifier covering HF through UHF band. FEATURES • Flat gain: ∆GP = ± 1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain • Supply voltage : 21 dBTYP. @ 0.5 GHz : 5 V ± 0.5 V • 4 pin mini mold package ORDERING INFORMATION Order Number Package 4 pin mini mold Marking Plastic magazine case C1C • Embossed tape 8 mm wide. • QTY 3 kpcs/Reel. Tape perforation side faces pin3, 4. Tape perforation side faces pin1, 2. Supplying Form µPC1688G µPC1688G-T1 µPC1688G-T2 Remarks To order evaluation samples, please contact your local NEC sales office. INTERNAL EQUIVALENT CIRCUIT PIN CONNECTIONS (Top View) 3 VCC Output 2 3 VCC C1C 2 Output Input 4 GND 1 4 Input 1 GND Caution Electro-static sensitive devices Document No. P11492EJ2V0DS00 (2nd edition) (Previous No. ID-2525) Date Published May 1996 P Printed in Japan © 1996 µPC1688G ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C) Supply Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VCC Pin PT Topt Tstg 6 +10 200 –40 to +85 –55 to +150 V dBm mW ˚ C ˚ C ELECTRICAL CHARACTERISTICS (TA = +25 ˚C, VCC = 5 V, ZS = ZL = 50 Ω) Characteristic Circuit current Power gain Noise figure Upper limit operating frequency Isolation Input return loss Output return loss Maximum output level Symbol ICC GP NF fu ISL RLin RLout PO(sat) MIN. 14 18 — 0.9 23 10 10 2 TYP. 19 21 4.0 1.1 27 13 13 4 MAX. 24 23 5.5 — — — — — Unit mA dB dB GHz dB dB dB dBm Test Conditions No input signal f = 0.5 GHz (GP = | S21 |) f = 0.5 GHz 3 dB down below 0.1 GHz gain f = 0.5 GHz (ISL = | S12 |) f = 0.5 GHz (RLin = | S11 |) f = 0.5 GHz (RLout = | S22 |) f = 0.5 GHz, Pin = –5 dBm As for test circuit and application circuit, please refer to Application note (Document No. 10964EJ2V0AN00). 2 µPC1688G TYPICAL CHARACTERISTICS (TA = 25 ˚C, Unless otherwise specified) SUPPLY CURRENT vs. SUPPLY VOLTAGE 32 No input signal 28 24 ICC - Supply Current - mA 20 16 12 8 4 ICC - Supply Current - mA 28 24 20 16 12 8 4 0 –60 SUPPLY CURRENT vs.TEMPERATURE 32 VCC = 5 V 0 1 2 3 4 5 6 –30 0 30 60 90 120 150 VCC - Supply Voltage - V TA - Temperature - ˚C SATURATION POWER vs. FREQUENCY 10 8 6 4 f = 100 MHz 2 0 –2 10 500 MHz 1 GHz IM3 - Third Order Inter-modulation - dBc PO(sat) - Saturation Power - dBm VCC = 5 V Pin = –5 dBm THIRD ORDER INTER-MODULATION vs. OUTPUT POWER OF EACH TONE –70 f1 = 500 MHz f2 = 502 MHz –60 VCC = 5.5 V –50 –40 –30 –20 –10 0 –20 5.0 V 4.5 V 30 50 70 100 300 500700 1G 2G f - Frequency - MHz –15 –10 –5 0 5 PO(each) - Output Power of Each Tone - dBm 3 µPC1688G POWER GAIN (| S21 |) vs. FREQUENCY 24 GP - Power Gain - dB (| S21 |) 20 16 12 8 4 0 10 TA = –40 ˚C +25 ˚C +85 ˚C NF - Noise Figure - dB GP - Power Gain - dB (| S21 |) - dB GP 24 NOISE FIGURE AND POWER GAIN (| S21 |) vs. FREQUENCY GP 20 16 12 8 4 0 10 VCC = 5.5 V 5.0 V VCC = 5.5 V 5.0 V 4.5 V NF 4.5 V 30 50 70100 3005007001G 2G 30 50 70100 3005007001G 2G f - Frequency - MHz f - Frequency - MHz INPUT POWER vs. OUTPUT POWER 10 f = 100 MHz f = 500 MHz 5 Pout - Output Power - dBm | S11 | - Input Return Loss - dB | S22 | - Output Return Loss - dB | S12 | - Isolation - dB INPUT AND OUTPUT RETURN LOSS, ISOLATION (| S11 |) (| S22 |) (| S12 |) vs. FREQUENCY 10 | S11 | | S22 | | S12 | 0 VCC = 5.5 V –10 –20 –30 –40 4.5 V –50 10 30 50 70100 3005007001G 2G 5.0 V VCC = 4.5 to 5.5 V VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V 0 f = 1 GHz –5 –10 –15 –20 –30 f - Frequency - MHz –25 –20 –15 –10 –5 0 Pin - Input Power - dBm 4 2.9 ± 0.2 1.1 +0.2 –0.1 0.8 0.6 +0.1 –0.05 1 2 (1.8) 0.85 0.95 0.4 +0.1 –0.05 PACKAGE DIMENSIONS (Unit: mm) 5˚ 2.8 +0.2 –0.3 1.5 +0.2 –0.1 0 to 0.1 5˚ 5˚ 0.16 +0.1 –0.06 0.4 +0.1 –0.05 5˚ 4 (1.9) 3 0.4 +0.1 –0.05 µPC1688G 5 µPC1688G NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground pins as short as possible. (4) The bypass capacitor should be attached to the VCC pin. (5) The DC cut capacitor must be each attached to the input and output pins. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. µPC1688G Recommended Condition Symbol IR35-00-3 Soldering Method Infrared ray reflow Soldering Conditions Package peak temperature: 235 ˚C, Hour: within 30 s. (more than 210 ˚C), Time: 3 times, Limited days: no. Note Package peak temperature: 215 ˚C, Hour: within 40 s. (more than 200 ˚C), Time: 3 times, Limited days: no. Note Soldering tub temperature: less than 260 ˚C, Hour: within 10 s. Time: Limited days: no.Note Pin area temperature: less than 300 ˚C, Hour: within 3 s/pin. Limited days: no.Note VPS VP15-00-3 Wave soldering WS60-00-1 Pin part heating Note It is the storage days after opening a dry pack, the storage conditions are 25 ˚C, less than 65 % RH. Caution The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535EJ7V0IF00). 6 µPC1688G [MEMO] 7 µPC1688G ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8