UPC2708TB-E3

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2708TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional minimold version. So, in the case of reducing your system size, µPC2708TB is suitable to replace from µPC2708T. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • • • • • • High-density surface mounting Wideband response Medium output power Supply voltage Power gain Port impedance : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) : fu = 2.9 GHz TYP. @ 3 dB bandwidth : PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor : VCC = 4.5 to 5.5 V : GP = 15 dB TYP. @ f = 1 GHz : input/output 50 Ω APPLICATIONS • 1st IF amplifiers in BS/CS converters, etc. • 1st IF stage buffer in BS/CS tuners, etc. ORDERING INFORMATION Part Number Package 6-pin super minimold Marking C1D Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. µPC2708TB-E3 Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order: µPC2708TB). Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P13442EJ3V0DS00 (3rd edition) Date Published November 2000 N CP(K) Printed in Japan The mark shows major revised points. © 1998, 2000 µPC2708TB PIN CONNECTIONS Pin No. (Top View) (Bottom View) 4 5 6 4 5 6 3 2 1 Pin Name INPUT GND GND OUTPUT GND VCC 1 2 3 4 5 6 2 1 PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) fu (GHz) 2.9 PO(sat) (dBm) +10.0 GP (dB) 15 NF (dB) 6.5 @f = 1 GHz 5 @f = 1 GHz 3.5 @f = 0.5 GHz 6.0 @f = 1 GHz ICC (mA) 26 6-pin super minimold 6-pin minimold 25 6-pin super minimold 6-pin minimold 22 6-pin super minimold 6-pin minimold 25 6-pin super minimold C2L C1F C1E C1D 3 Part No. Package 6-pin minimold Marking µPC2708T µPC2708TB µPC2709T µPC2709TB µPC2710T µPC2710TB µPC2776T µPC2776TB 2.7 +8.5 23 1.0 +13.5 33 2.3 +11.5 23 C1D Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution The package size distinguishes between minimold and super minimold. 2 Data Sheet P13442EJ3V0DS00 µPC2708TB SYSTEM APPLICATION EXAMPLE EXAMPLE OF DBS CONVERTERS BS Antenna (DBS ODU) Parabola Antenna RF Amp. Mixer µ PC2711TB µ PC2712TB IF Amp. To IDU µPC2708TB Oscillator EXAMPLE OF 2.4 GHz BAND RECIEVER RX I Q DEMOD. PLL SW PLL I Driver TX PA 0° φ µPC2708TB 90° Q Data Sheet P13442EJ3V0DS00 3 µPC2708TB PIN EXPLANATION Pin Voltage (V) Note Pin No. 1 Pin Name Applied Voltage (V) – Function and Applications Internal Equivalent Circuit INPUT 1.16 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. 6 VCC 4 OUT 4 OUTPUT Voltage as same as VCC through external inductor 4.5 to 5.5 – IN 1 6 VCC – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 3 GND 25 GND 2 3 5 GND 0 – Note Pin voltage is measured at VCC = 5.0 V 4 Data Sheet P13442EJ3V0DS00 µPC2708TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Total Circuit Current Power Dissipation Symbol VCC ICC PD Conditions TA = +25°C, Pin 4 and 6 TA = +25°C Mounted on doublesided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) Ratings 6 60 270 −40 to +85 −55 to +150 TA = +25°C +10 Unit V mA mW °C °C dBm Operating Ambient Temperature Storage Temperature Input Power TA Tstg Pin RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC MIN. 4.5 −40 TYP. 5.0 MAX. 5.5 Unit V °C Remark The same voltage should be applied to pin 4 and 6. Operating Ambient Temperature TA +25 +85 ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Circuit Current Power Gain Saturated Output Power Noise Figure Upper Limit Operating Frequency Symbol ICC GP PO(sat) NF fu Test Conditions No input Signal f = 1 GHz f = 1 GHz, Pin = 0 dBm f = 1 GHz 3 dB down below flat gain at f = 0.1 GHz f = 1 GHz f = 1 GHz f = 1 GHz f = 0.1 to 2.6 GHz MIN. 20 13.0 +7.5 – 2.7 TYP. 26 15.0 +10.0 6.5 2.9 MAX. 33 18.5 – 8.0 – Unit mA dB dBm dB GHz Isolation Input Return Loss Output Return Loss Gain Flatness ISL RLin RLout ∆GP 18 8 16 – 23 11 20 ±0.8 – – – – dB dB dB dB Data Sheet P13442EJ3V0DS00 5 µPC2708TB TEST CIRCUIT VCC 1 000 pF C3 L 4 C2 1 000 pF 50 Ω OUT 6 50 Ω IN 1 000 pF C1 1 2, 3, 5 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 C3 L Bias Tee Capacitor Bias Tee Value 1 000 pF 1 000 pF 1 000 nH C1 to C3 L Type Chip Capacitor Chip Inductor Value 1 000 pF 300 nH 100 nH 10 nH Operating Frequency 100 MHz or higher 10 MHz or higher 100 MHz or higher 1.0 GHz or higher EXAMPLE OF ACTURAL APPLICATION COMPONENTS INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). 6 Data Sheet P13442EJ3V0DS00 µPC2708TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 Top View 3 1 IN OUT C C 2 C 5 4 1D Mounting Direction VCC C 6 COMPONENT LIST Value C L 1 000 pF 300 nH Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E). L Data Sheet P13442EJ3V0DS00 7 µPC2708TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 No input signal 35 Circuit Current ICC (mA) Circuit Current ICC (mA) 0 1 2 3 4 Supply Voltage VCC (V) 5 6 30 25 20 15 10 5 0 CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 40 No input signal 35 VCC = 5.0 V 30 25 20 15 10 5 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (°C) 20 9 NOISE FIGURE, POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY 20 VCC = 5.0 V VCC = 5.5 V Noise Figure NF (dB) Power Gain GP (dB) Power Gain GP (dB) 8 GP 15 VCC = 5.5 V VCC = 5.0 V TA = –40°C TA = +25°C 15 TA = +85°C TA = –40°C TA = +25°C TA = +85°C 7 6 10 VCC = 4.5 V NF VCC = 4.5 V VCC = 5.0 V 5 5 0.1 10 0.1 0.3 1.0 Frequency f (GHz) 3.0 0.3 1.0 Frequency f (GHz) 3.0 ISOLATION vs. FREQUENCY 0 VCC = 5.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) –10 Isolation ISL (dB) INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 VCC = 5.0 V –10 RLin –20 –20 RLout –30 –30 –40 –50 0.1 0.3 1.0 Frequency f (GHz) 3.0 –40 0.1 0.3 1.0 Frequency f (GHz) 3.0 8 Data Sheet P13442EJ3V0DS00 µPC2708TB OUTPUT POWER vs. INPUT POWER +15 f = 1.0 GHz +10 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +15 f = 1.0 GHz VCC = 5.0 V +10 Output Power Pout (dBm) VCC = 5.5 V TA = +85°C +5 0 –5 –10 –15 –20 –30 VCC = 4.5 V VCC = 5.0 V +5 0 –5 –10 –15 –20 –30 TA = –40°C TA = +25°C –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 OUTPUT POWER vs. INPUT POWER +15 f = 2.0 GHz +10 Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +15 VCC = 5.0 V +10 f = 1.0 GHz VCC = 5.5 V +5 VCC = 5.0 V 0 –5 –10 –15 –20 –30 VCC = 4.5 V +5 f = 2.0 GHz 0 f = 2.9 GHz –5 –10 –15 –20 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 SATURATED OUTPUT POWER vs. FREQUENCY 3rd Order Intermodulation Distotion IM3 (dBc) +15 Saturated Output Power PO (sat) (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 f1 = 1 .000 GHz f2 = 1 .002 GHz 50 VCC = 5.0 V 40 VCC = 5.5 V 30 VCC = 4.5 V 20 VCC = 5.5 V Pin = 0 dBm VCC = 5.0 V +10 VCC = 4.5 V +5 0 0.1 0.3 1.0 Frequency f (GHz) 3.0 10 –10 –8 –6 –4 –2 0 +2 +4 +6 +8 +10 Output Power of Each Tone PO (each) (dBm) Remark The graphs indicate nominal characteristics. Data Sheet P13442EJ3V0DS00 9 µPC2708TB S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V) S11-FREQUENCY 1.0 GHz 2.0 GHz 0.1 GHz 3.0 GHz S22-FREQUENCY 3.0 GHz 0.1 GHz 2.0 GHz 10 Data Sheet P13442EJ3V0DS00 µPC2708TB TYPICAL S-PARAMETER VALUES (TA = +25°C) VCC = Vout = 5.0 V, ICC = 27 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 MAG. 0.039 0.053 0.069 0.088 0.105 0.123 0.144 0.164 0.186 0.205 0.226 0.245 0.263 0.286 0.308 0.328 0.344 0.364 0.382 0.395 0.405 0.417 0.427 0.431 0.431 0.434 0.423 0.419 0.408 0.400 0.386 S11 ANG. 138.9 119.7 106.7 97.2 91.6 84.9 79.7 74.7 70.7 66.1 61.7 57.7 53.7 48.6 44.3 40.7 36.2 31.0 26.0 21.2 16.8 11.8 6.6 2.2 –3.0 –8.2 –12.3 –17.1 –21.5 –26.2 –29.3 MAG. 5.815 5.822 5.815 5.813 5.794 5.823 5.871 5.890 5.938 5.960 6.072 6.097 6.174 6.275 6.371 6.419 6.470 6.555 6.542 6.570 6.528 6.527 6.438 6.336 6.247 6.127 5.952 5.816 5.619 5.354 5.134 S21 ANG. –4.8 –9.8 –14.3 –18.8 –23.8 –28.4 –33.0 –38.2 –42.8 –47.6 –52.7 –57.5 –63.0 –68.4 –74.3 –79.8 –85.9 –92.1 –98.3 –104.7 –111.3 –118.5 –124.7 –131.3 –138.1 –145.0 –151.7 –158.2 –165.0 –171.5 –177.4 MAG. 0.077 0.075 0.074 0.074 0.072 0.071 0.070 0.071 0.073 0.070 0.069 0.070 0.067 0.069 0.070 0.066 0.067 0.069 0.070 0.070 0.070 0.071 0.072 0.071 0.072 0.071 0.071 0.070 0.073 0.074 0.075 S12 ANG. –0.8 –1.5 –0.6 –0.5 –1.1 –0.6 0.1 0.5 2.3 1.0 3.3 4.4 2.5 5.0 5.4 7.1 5.6 8.2 8.4 8.7 10.1 9.4 9.5 10.7 12.8 15.4 14.5 16.1 15.3 17.1 17.1 MAG. 0.051 0.048 0.049 0.054 0.054 0.056 0.060 0.065 0.072 0.074 0.075 0.082 0.085 0.091 0.092 0.097 0.096 0.100 0.100 0.101 0.100 0.096 0.098 0.095 0.098 0.094 0.088 0.081 0.074 0.065 0.053 S22 ANG. 0.9 1.4 5.9 8.9 8.8 10.4 11.5 11.6 11.1 8.2 9.4 5.6 0.6 –4.6 –8.2 –12.6 –19.6 –23.9 –32.0 –38.9 –47.2 –57.2 –66.1 –76.5 –86.1 –99.9 –116.7 –134.4 –149.7 –170.3 172.8 1.34 1.36 1.38 1.36 1.39 1.40 1.40 1.37 1.34 1.36 1.34 1.31 1.33 1.28 1.24 1.26 1.23 1.18 1.15 1.13 1.12 1.09 1.09 1.09 1.09 1.10 1.14 1.18 1.19 1.24 1.28 K Data Sheet P13442EJ3V0DS00 11 µPC2708TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 12 Data Sheet P13442EJ3V0DS00 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 µPC2708TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P13442EJ3V0DS00 13 µPC2708TB [MEMO] 14 Data Sheet P13442EJ3V0DS00 µPC2708TB [MEMO] Data Sheet P13442EJ3V0DS00 15 µPC2708TB NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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