UPC2710TB-E3

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESAT TM lll silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • • • • • • • Supply voltage Circuit current Power gain Medium output power Upper limit operating frequency Port impedance High-density surface mounting : VCC = 4.5 to 5.5 V : ICC = 22 mA TYP. @VCC = 5.0 V : GP = 33 dB TYP. @ f = 500 MHz : PO(sat) = +13.5 dBm TYP. @ f = 500 MHz : fu = 1.0 GHz TYP. @ 3 dB bandwidth : input/output 50 Ω : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • PA driver for 900 MHz band cellular telephone ORDERING INFORMATION Part Number Package 6-pin super minimold Marking C1F Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. µPC2710TB-E3 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2710TB) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P13443EJ3V0DS00 (3rd edition) Date Published January 2001 N CP(K) Printed in Japan The mark shows major revised points © 1998, 2001 µPC2710TB PIN CONNECTIONS Pin No. (Top View) (Bottom View) 4 5 6 4 5 6 3 2 1 Pin Name INPUT GND GND OUTPUT GND VCC 1 2 3 4 5 6 2 1 PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Part No. fu (GHz) 2.9 PO(sat) (dBm) +10.0 GP (dB) 15 NF (dB) 6.5 ICC (mA) 26 6-pin super minimold 6-pin minimold 2.3 +11.5 23 5.0 25 6-pin super minimold 6-pin minimold 1.0 +13.5 33 3.5 22 6-pin super minimold 6-pin minimold 2.7 +8.5 23 6.0 25 6-pin super minimold C2L C1F C1E Package 6-pin minimold C1D Marking µPC2708T µPC2708TB µPC2709T µPC2709TB µPC2710T µPC2710TB µPC2776T µPC2776TB Remark Notice Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. The package size distinguishes between minimold and super minimold. 2 C1F 3 Data Sheet P13443EJ3V0DS µPC2710TB SYSTEM APPLICATION EXAMPLE EXAMPLE OF 900 MHz BAND DIGITAL CELLULER TELEPHONE RX DEMOD. I Q SW PLL PLL 0° Driver TX PA I φ 90° Q µ PC2710TB Data Sheet P13443EJ3V0DS 3 µPC2710TB PIN EXPLANATION Applied Voltage (V) – Pin Voltage (V) Note Pin No. 1 Pin Name Function and Applications Internal Equivalent Circuit INPUT 0.90 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. 6 4 2 3 5 GND 0 – 1 4 OUTPUT Voltage as same as VCC through external inductor 4.5 to 5.5 – 3 2 5 6 VCC – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 5.0 V 4 Data Sheet P13443EJ3V0DS µPC2710TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Total Circuit Current Power Dissipation Symbol VCC ICC PD Conditions TA = +25°C, pin 4 and pin 6 TA = +25°C Mounted on double-sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85°C Ratings 5.8 60 270 Unit V mA mW Operating Ambient Temperature Storage Temperature Input Power TA Tstg Pin TA = +25°C −40 to +85 −55 to +150 +10 °C °C dBm RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC MIN. 4.5 TYP. 5.0 MAX. 5.5 Unit V Remark The same voltage should be applied to pin 4 and pin 6. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Circuit Current Power Gain Saturated Output Power Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Gain Flatness Symbol ICC GP PO(sat) NF fu No signal f = 500 MHz f = 500 MHz, Pin = –8 dBm f = 500 MHz 3 dB down below flat gain at f = 0.1 GHz Test Conditions MIN. 16 30 +11.0 – 0.7 TYP. 22 33 +13.5 3.5 1.0 MAX. 29 36.5 – 5.0 – Unit mA dB dBm dB GHz ISL RLin RLout ∆GP f = 500 MHz f = 500 MHz f = 500 MHz f = 0.1 to 0.6 GHz 34 3 9 – 39 6 12 ±0.8 – – – – dB dB dB dB Data Sheet P13443EJ3V0DS 5 µPC2710TB TEST CIRCUIT VCC 1 000 pF C3 L 6 50 Ω IN 1 000 pF C1 1 4 C2 1 000 pF 50 Ω OUT 2, 3, 5 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 C3 L Bias Tee Capacitor Bias Tee Value 1 000 pF 1 000 pF 1 000 nH C1 to C3 L Type Chip Capacitor Chip Inductor Value 1 000 pF 300 nH 100 nH 10 nH Operating Frequency 100 MHz or higher 10 MHz or higher 100 MHz or higher 1.0 GHz or higher EXAMPLE OF ACTURAL APPLICATION COMPONENTS INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). 6 Data Sheet P13443EJ3V0DS µPC2710TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 Top View 3 1 IN C 5 4 L OUT C 2 Mounting Direction VCC C 6 C 1F COMPONENT LIST Value C L 1 000 pF 300 nH Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF 6-PIN SUPER MINIMOLD SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P13252E). Data Sheet P13443EJ3V0DS 7 µPC2710TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 No signal 35 35 40 CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE No signal VCC = 5.0 V Circuit Current ICC (mA) 30 25 20 15 10 5 0 1 2 3 4 5 6 Circuit Current ICC (mA) 30 25 20 15 10 5 0 −60 −40 −20 0 +20 +40 +60 +80 +100 Supply Voltage VCC (V) Operating Ambient Temperature TA (°C) NOISE FIGURE, POWER GAIN vs. FREQUENCY 35 VCC = 5.5 V VCC = 5.0 V 35 POWER GAIN vs. FREQUENCY VCC = 5.0 V Noise Figure NF (dB) Power Gain GP (dB) Power Gain GP (dB) 4.5 30 VCC = 5.5 V VCC = 4.5 V GP TA = −40°C TA = +25°C 30 TA = +85°C 4 NF VCC = 4.5 V VCC = 5.0 V 3.5 3 25 0.1 0.3 Frequency f (GHz) 1.0 2.0 25 0.1 0.3 Frequency f (GHz) 1.0 2.0 ISOLATION vs. FREQUENCY 0 VCC = 5.0 V −10 0 INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY VCC = 5.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) −10 −20 −30 −40 −50 0.1 Isolation ISL (dB) −20 −30 −40 −50 0.1 RLin RLout 0.3 Frequency f (GHz) 1.0 2.0 0.3 1.0 Frequency f (GHz) 2.0 8 Data Sheet P13443EJ3V0DS µPC2710TB OUTPUT POWER vs. INPUT POWER +20 f = 0.5 GHz VCC = 5.5 V +20 +15 +15 OUTPUT POWER vs. INPUT POWER VCC = 5.0 V f = 0.5 GHz TA = +85°C Output Power Pout (dBm) Output Power Pout (dBm) +10 +5 0 −5 −10 −15 −40 −35 −30 −25 −20 −15 −10 −5 Input Power Pin (dBm) 0 +5 +10 VCC = 5.0 V VCC = 4.5 V +10 +5 0 −5 −10 −15 −40 −35 −30 −25 −20 −15 −10 −5 Input Power Pin (dBm) 0 +5 +10 TA = +25°C TA = −40°C OUTPUT POWER vs. INPUT POWER +20 f = 1.0 GHz +15 VCC = 5.0 V +20 +15 +10 +5 OUTPUT POWER vs. INPUT POWER VCC = 5.0 V Output Power Pout (dBm) +10 +5 0 VCC = 5.5 V Output Power Pout (dBm) f = 0.5 GHz f = 1.0 GHz 0 −5 −10 VCC = 4.5 V −5 −10 −15 −40 −35 −30 −25 −20 −15 −10 −5 Input Power Pin (dBm) 0 +5 +10 −15 −40 −35 −30 −25 −20 −15 −10 −5 Input Power Pin (dBm) 0 +5 +10 +20 3rd Order Intermodulation Distortion IM3 (dBc) SATURATED OUTPUT POWER vs. FREQUENCY Pin = −8 dBm VCC = 5.5 V VCC = 5.0 V −60 −50 −40 −30 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE f1 = 0.500 GHz f2 = 0.502 GHz Saturated Output Power PO (sat) (dBm) +18 +16 +14 +12 +10 +8 +6 0.1 VCC = 5.0 V VCC = 5.5 V VCC = 4.5 V −20 −10 −10 −8 −6 VCC = 4.5 V 0.2 0.5 Frequency f (GHz) 1.0 2.0 −4 −2 0 +2 +4 +6 +8 +10 Output Power of Each Tone PO (each) (dBm) Data Sheet P13443EJ3V0DS 9 µPC2710TB S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V) S11-FREQUENCY 0.1 GHz 3.0 GHz 2.0 GHz 1.0 GHz S22- FREQUENCY 3.0 GHz 0.1 GHz 2.0 GHz 1.0 GHz 10 Data Sheet P13443EJ3V0DS µPC2710TB TYPICAL S-PARAMETER VALUES (TA = +25°C) VCC = Vout = 5.0 V, ICC = 22 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 S11 MAG. 0.306 0.324 0.356 0.400 0.439 0.469 0.481 0.488 0.479 0.465 0.448 0.417 0.387 0.350 0.316 0.292 0.256 0.245 0.215 0.201 0.177 0.161 0.145 0.124 0.113 0.107 0.091 0.081 0.067 0.055 0.039 ANG. 2.5 5.2 5.3 2.5 −3.3 −10.2 −17.9 −26.7 −34.5 −41.2 −49.3 −54.9 −61.2 −65.2 −70.8 −74.0 −76.9 −80.5 −82.9 −85.6 −84.4 −88.8 −88.7 −90.3 −89.8 −91.9 −92.2 −94.9 −97.4 −103.8 −95.6 MAG. 43.072 43.517 44.432 45.513 45.679 45.670 44.793 43.016 40.519 37.946 35.122 32.108 29.221 26.656 23.895 21.576 19.567 17.743 16.040 14.717 13.475 12.327 11.154 10.262 9.490 8.793 8.149 7.652 7.134 6.726 6.295 S21 ANG. −8.4 −17.1 −26.5 −36.9 −48.1 −59.7 −71.8 −84.3 −96.0 −107.3 −117.9 −128.0 −137.0 −145.8 −153.9 −161.6 −168.1 −174.4 179.6 173.5 168.8 163.1 158.7 154.4 150.4 146.4 142.4 138.9 135.1 131.5 128.4 MAG. 0.012 0.010 0.010 0.012 0.012 0.013 0.014 0.014 0.013 0.016 0.016 0.015 0.015 0.015 0.013 0.016 0.015 0.018 0.017 0.021 0.020 0.021 0.022 0.023 0.025 0.028 0.030 0.031 0.031 0.039 0.039 S12 ANG. 15.2 10.7 20.2 26.9 27.0 31.3 34.9 27.9 26.6 30.8 26.6 39.5 39.7 50.2 50.8 56.6 69.0 61.7 70.0 71.2 83.0 76.7 87.9 81.4 91.9 88.7 93.4 92.1 93.0 88.3 89.6 MAG. 0.156 0.164 0.185 0.225 0.255 0.283 0.301 0.312 0.316 0.311 0.307 0.282 0.270 0.248 0.236 0.215 0.200 0.196 0.180 0.175 0.166 0.171 0.159 0.164 0.158 0.166 0.175 0.183 0.191 0.200 0.203 S22 ANG. 2.7 2.1 0.3 −5.5 −15.4 −27.6 −40.2 −54.9 −67.7 −79.5 −92.2 −104.6 −115.5 −127.0 −136.2 −145.3 −155.2 −162.5 −173.4 −178.1 172.0 167.7 159.1 154.0 147.0 141.8 135.7 131.6 123.4 118.9 111.5 1.08 1.17 1.10 0.92 0.85 0.77 0.74 0.74 0.78 0.79 0.85 0.99 1.12 1.27 1.56 1.49 1.71 1.59 1.88 1.71 1.94 1.99 2.08 2.15 2.19 2.06 2.13 2.13 2.26 1.97 2.08 K Data Sheet P13443EJ3V0DS 11 µPC2710TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 12 Data Sheet P13443EJ3V0DS 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 µPC2710TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input pin and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: NoneNote Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: NoneNote Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: NoneNote Pin temperature: 300°C or below Time: 3 seconds or less (per side of device) Exposure limit: NoneNote Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P13443EJ3V0DS 13 µPC2710TB [MEMO] 14 Data Sheet P13443EJ3V0DS µPC2710TB [MEMO] Data Sheet P13443EJ3V0DS 15 µPC2710TB NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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