UPC2712TB

DATA SHEET DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2711TB, µPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC2711TB and µPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS tuners. These ICs are packaged in super minimold package which is smaller than conventional minimold. The µPC2711TB and µPC2712TB have each compatible pin connections and performance to µPC2711T/µPC2712T of conventional minimold version. So, in the case of reducing your system size, µPC2711TB/µPC2712TB are suitable to replace from µPC2711T/µPC2712T. These ICs are manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these IC have excellent performance, uniformity and reliability. FEATURES • • • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) Supply voltage Wideband response Power gain variation : VCC = 4.5 to 5.5 V : fu = 2.9 GHz TYP. @µPC2711TB fu = 2.6 GHz TYP. @µPC2712TB : GP = 13 dB TYP. @µPC2711TB GP = 20 dB TYP. @µPC2712TB • APPLICATIONS • • Local buffer in DBS tuners, etc. : µPC2711TB RF stage buffer in DBS tuners, etc. : µPC2712TB ORDERING INFORMATION Part Number Package 6-pin super minimold Marking C1G C1H Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. µPC2711TB-E3 µPC2712TB-E3 Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order: µPC2711TB, µPC2712TB). Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11510EJ3V0DS00 (3rd edition) Date Published November 2000 N CP(K) Printed in Japan The mark shows major revised points. © 1996, 2000 µPC2711TB, µPC2712TB PIN CONNECTIONS (Top View) (Bottom View) 4 5 6 4 5 6 3 2 1 Pin No. 1 2 3 4 Pin Name INPUT GND GND OUTPUT GND VCC 3 2 1 C1G Marking is an example of µ PC2711TB 5 6 PRODUCT LINE-UP OF 5V-BIAS SILICON MMIC WIDEBAND AMPLIFIERS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω) Part No. fu (GHz) 2.9 PO(sat) (dBm) +1 GP (dB) 13 NF (dB) 5.0 ICC (mA) 12 Package 6-pin minimold 6-pin super minimold 2.6 +3 20 4.5 12 6-pin minimold 6-pin super minimold 1.2 +7.0 29 3.2 @f = 0.5 GHz 5.5 @f = 0.5 GHz 3.5 @f = 0.5 GHz 2.3 @f = 1.5 GHz 12 6-pin minimold C1J C1H Marking C1G µPC2711T µPC2711TB µPC2712T µPC2712TB µPC2713T µPC2791TB µPC2792TB µPC3215TB 1.9 +4.0 12 17 6-pin super minimold C2S 1.2 +5.0 20 19 C2T 2.9 +3.5 20.5 14 C3H Remark Caution Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. The package size distinguish between minimold and super minimold. 2 Data Sheet P11510EJ3V0DS00 µPC2711TB, µPC2712TB SYSTEM APPLICATION EXAMPLE RF unit block of DBS tuners 1st IF input from DBS converter BPF Mixer SAW AGC Amp. FM Demod. Baseband output µ PC2712TB µ PC2711TB µ PC2711TB Prescaler PLL Synth. OSC LPF PIN EXPLANATIONS Applied Voltage (V)  Pin Voltage Note (V) 1.00 Pin No. 1 Pin Name Function and Applications Internal Equivalent Circuit INPUT 0.97 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multifeedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. Signal output pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. This pin must be coupled to next stage with capacitor for DC cut. Power supply pin. This pin should be externally equipped with bypass capacitor to minimize ground impedance. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 6 4 4 OUTPUT  4.40 1 4.12 6 VCC 4.5 to 5.5  2 3 5 GND 0  2 3 5 Note Pin voltage is measured at VCC = 5.0 V, Above: µPC2711TB, Below: µPC2712TB Data Sheet P11510EJ3V0DS00 3 µPC2711TB, µPC2712TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Total Circuit Current Power Dissipation Symbol VCC ICC PD TA = +25°C TA = +25°C Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) Conditions Ratings 6 30 270 −40 to +85 −55 to +150 TA = +25°C +10 Unit V mA mW °C °C dBm Operating Ambient Temperature Storage Temperature Input Power TA Tstg Pin RECOMMENDED OPERATING RANGE Parameter Supply Voltage Operating Ambient Temperature Symbol VCC TA MIN. 4.5 −40 TYP. 5.0 +25 MAX. 5.5 +85 Unit V °C ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω) µPC2711TB Parameter Circuit Current Power Gain Saturated Output Power Symbol ICC GP PO(sat) Test Conditions MIN. No signal f = 1 GHz f = 1 GHz, Pin = 0 dBm f = 1 GHz 3 dB down below from gain at f = 0.1 GHz f = 1 GHz f = 1 GHz f = 1 GHz f = 0.1 to 2.5 GHz @µPC2711TB f = 0.1 to 2.0 GHz @µPC2712TB 9 11 −2  2.7 TYP. 12 13 +1 MAX. 15 16.5  MIN. 9 18 0  2.2 TYP. 12 20 +3 MAX. 15 23.5  mA dB dBm µPC2712TB Unit Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Gain Flatness NF fu 5 2.9 6.5      4.5 2.6 6      dB GHz ISL RLin RLout ∆GP 25 20 9  30 25 12 ±0.8 28 9 10  33 12 13 ±0.8 dB dB dB dB 4 Data Sheet P11510EJ3V0DS00 µPC2711TB, µPC2712TB TEST CIRCUIT VCC 1 000 pF C3 6 50 Ω IN 1 000 pF C1 1 4 C2 1 000 pF 50 Ω OUT 2, 3, 5 EXAMPLE OF APPLICATION CIRCUIT VCC 1 000 pF C3 6 50 Ω IN 1 000 pF C1 1 4 C4 1 000 pF C5 1 000 pF R1 50 to 200 Ω 2, 3, 5 To stabilize operation, please connect R1, C5 1 6 4 C2 1 000 pF 50 Ω OUT 1 000 pF C6 2, 3, 5 The application circuits and their parameters are for references only and are not intended for use in actual design-ins. CAPACITORS FOR VCC, INPUT AND OUTPUT PINS 1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output pins. Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 π fZs).] Data Sheet P11510EJ3V0DS00 5 µPC2711TB, µPC2712TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 Top View 3 2 1 IN C 5 4 OUT C C 1G 6 Mounting direction (Marking is an example for µ PC2711TB) VCC C COMPONENT LIST Value C 1 000 pF Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATIONS OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SILICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC (P11976E). 6 Data Sheet P11510EJ3V0DS00 µPC2711TB, µPC2712TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)  µPC2711TB  CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 18 Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 20 18 Circuit Current ICC (mA) No input signal No input signal VCC = 5.0 V 16 14 12 10 8 6 4 2 0 0 1 4 2 3 Supply Voltage VCC (V) 5 6 16 14 12 10 8 6 4 2 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (°C) NOISE FIGURE, POWER GAIN vs. FREQUENCY 20 VCC = 5.5 V VCC = 5.0 V POWER GAIN vs. FREQUENCY 15 TA = –40°C TA = +25°C TA = +85°C 8 Power Gain GP (dB) Noise Figure NF (dB) 15 Power Gain GP (dB) TA = –40°C TA = +85°C 10 TA = +25°C GP 10 7 VCC = 4.5 V 6 5 VCC = 5.5 V 5 0 VCC = 4.5 V NF VCC = 5.0 V VCC = 5.0 V 5 0.1 4 –5 0.1 0.3 1.0 Frequency f (GHz) 3.0 0.3 1.0 Frequency f (GHz) 3.0 ISOLATION vs. FREQUENCY 0 VCC = 5.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 VCC = 5.0 V –10 Isolation ISL (dB) –10 RLout –20 RLin –20 –30 –30 –40 –50 0.1 0.3 1.0 Frequency f (GHz) 3.0 –40 0.1 0.3 1.0 Frequency f (GHz) 3.0 Data Sheet P11510EJ3V0DS00 7 µPC2711TB, µPC2712TB  µPC2711TB  OUTPUT POWER vs. INPUT POWER +5 f = 1.0 GHz Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +5 VCC = 5.0 V f = 1.0 GHz Output Power Pout (dBm) 5.5 V 0 +85°C 0 VCC = 5.0 V –5 4.5 V –5 TA = +25°C –40°C –20°C –10 –10 –15 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 +5 –20 –35 –30 –25 –20 –15 –10 –5 0 +5 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER +5 f = 2.0 GHz Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +5 f = 0.5 GHz VCC = 5.0 V Output Power Pout (dBm) 5.5 V 0 0 VCC = 5.0 V 4.5 V –10 –5 –5 f = 1.0 GHz f = 2.0 GHz f = 2.9 GHz –10 –15 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 +5 –20 –35 –30 –25 –20 –15 –10 –5 0 +5 Input Power Pin (dBm) Input Power Pin (dBm) +10 Saturated Output Power PO(sat) (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) SATURATED OUTPUT POWER vs. FREQUENCY 5.5 V VCC = 5.0 V +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 50 f1 = 1.000 GHz f2 = 1.002 GHz 40 VCC = 5.0 V 30 Pin = 0 dBm 0 4.5 V –5 5.5 V 20 4.5 V 10 –10 –15 0.1 0.3 1.0 3.0 0 –20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0 Frequency f (GHz) Output Power of Each Tone PO(each) (dBm) Remark The graphs indicate nominal characteristics. 8 Data Sheet P11510EJ3V0DS00  µPC2711TB  S22-FREQUENCY S11-FREQUENCY 0.1 0.2 5 0.4 5 0.0 0.3 -15 5 0.4 5 0.0 -1 40 →WAVELENG 0 0.01 THS TOW 0.49 ARD 0.02 0.48 0 0.49 0.01 0.0 GENE 0.48 ← 7 3 0.02 RA 0.4 ECTION COEFFICIENT IN DE OF REFL 3. GREES 0.47 0.0 TOR 6 0.0 ANGLE → 0.4 4 0.4 4 60 -1 0 6 0.0 0.0 0.4 5 15 0 0 5 -15 0.1 6 0.4 4 0.0 0.1 0.1 0.2 7 0.4 3. 0.0 0 →WAVELENG 0 0.01 THS TOW 0.49 ARD 0.02 0.48 0 0.49 0.01 0.0 GENE 0.48 ← 3 0.02 RA ECTION COEFFICIENT IN DE OF REFL GREES 0.47 0.0 TOR ANGLE → 0.4 4 60 -1 0 6 0.0 0.4 5 15 0 5 44 0. 06 0. 0.1 POS ITIV -1 40 ON E 4 0. 0. 0. 06 44 0.3 NT 0.3 0.2 NT 0.1 0.2 44 0. 06 0. ON E 0.2 4 07 0. 43 0. POS ITIV 0. 0. 06 44 0. 0. 4 0.3 07 0. 43 0. 0. 4 0. 0. 43 07 30 30 0.2 0 13 -1 0. 0. 43 07 13 0 -1 8 0.0 2 0.4 8 0.0 2 0.4 0.4 0.0 2 8 NE GA 0.4 0.0 2 8 0 0 0.3 12 0 NE GA 0.5 NE P OM EC NC  TA AC JX  RE – o Z VE  TI 0.5 0.5 14 0 ER EA C T  AN  + JX CE C OM Zo  PO  P OM EC NC  TA AC JX  RE  – o Z VE  TI 0.3 0.4 0.5 0.6 14 0 ER EA C T  AN  +JX CE C OM Zo  PO  NE 0.5 NT NT 0 12 -12 9 0.0 1 0.4 9 0.0 1 0.4 0.4 1 0.0 9 S-PARAMETERS (TA = +25°C, VCC = 5.0 V) 0.4 110 110 -110 0.40 0.10 0.40 0.10 -110 0.10 0.40 0.10 0.40 0.7 0.5 0.4 1 0.0 9 0.6 -12 0.6 0.6 0.6 0.7 0.8 0.39 0.11 0.11 0.39 0.7 0.7 0.8 0.6 0.8 0.8 0.39 0.11 0.11 0.39 -100 0.9 -100 0.7 100 0.7 0.8 0.9 1.0 0.4 100 0.8 0.12 0.38 0.9 0.9 0.9 0.12 0.38 0.38 0.12 0.38 0.12 1.0 G 0.9 -90 -90 0.2 0.1 G 1.0 1.0 90 0.2 RESISTANCE COMPONENT R 0.2  Zo  RESISTANCE COMPONENT R 0.2  Zo  1.0 1.0 1.0 0.2 0.4 90 0.2 0.2 0.4 0.2 0.4 0.4 0.37 0.13 0.37 0.13 0.13 0.37 0.4 0.13 0.37 0.6 0.6 0.6 1.2 0.6 8 1.2 0. 0.4 0.4 0.6 0.6 0.6 0.6 0. 0. 0.8 0. 0.8 0.8 1.2 80 1.4 1.2 1.2 1.4 8 8 1.2 0.8 80 8 -80 -80 1.0 1.0 0.1 G 0.36 0.14 1.0 G 0 2.9 G 1.4 70 0.15 0.35 1.8 2.0 1.4 0.36 0.14 1. 0 0.14 0.36 0.14 0.36 1.6 1.0 1. 1. 0 1.6 1.8 2.0 0 1. 1.0 1.4 70 2.9 G 1.4 -70 -70 0.15 0.35 0.35 0.15 4 0.3 6 0.1 4 0.3 6 0.1 -60 3 0.3 7 0.1 0 0 5.0 50 3 0.3 7 0.1 2.0 4.0 0.1 0.3 7 3 2.0 -60 -5 -5 0 32 0. 18 0. 32 0. 18 0. 0 3. 3. 4.0 4.0 5.0 5.0 10 20 10 20 50 50 µPC2711TB, µPC2712TB 0 0.2 0 0.3 1 0.2 9 0.2 2 0.2 8 0.2 20 0.23 0.27 10 0.24 0.26 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 -20 0.2 8 0.2 2 0.2 0.2 9 1 0.3 0.2 0 0 0 0.2 0 0.3 50 10 20 50 50 30 -30 1 0.2 9 0.2 30 20 5.0 20 20 10 20 19 0. 31 0. 40 -4 0 0. 0. 31 19 19 0. 31 0. 40 2 0.2 8 0.2 0.23 0.27 10 0.24 0.26 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 -20 0.2 8 0.2 2 -30 0.2 0.2 9 1 0.3 0.2 0 0 -4 0 0. 0. 31 19 Data Sheet P11510EJ3V0DS00 1.6 0.35 0.15 1.6 0.1 6 0.3 4 1.6 1.8 1.6 0.1 6 0.3 4 1.8 60 3.0 1.8 3.0 2.0 1.8 60 4.0 5.0 2.0 50 0.1 0.3 7 3 0. 0. 18 32 0. 0. 18 32 3. 0 3. 0 10 4.0 10 4.0 5.0 50 9 µPC2711TB, µPC2712TB TYPICAL S-PARAMETER VALUES (TA = +25°C) µPC2711TB VCC = 5.0 V, ICC = 13.8 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 MAG. 0.085 0.086 0.098 0.081 0.066 0.041 0.053 0.070 0.098 0.101 0.090 0.060 0.019 0.023 0.062 0.087 0.113 0.126 0.154 0.178 0.212 0.232 0.246 0.248 0.240 0.238 0.240 0.262 0.285 0.316 S11 ANG. −22.4 −25.0 −29.2 −29.4 −33.9 −54.5 −104.3 −119.7 −121.9 −112.5 −108.5 −95.6 −79.2 54.8 80.7 80.4 78.7 72.0 63.5 59.0 54.2 55.2 53.8 53.6 49.2 43.7 36.2 31.7 28.8 29.7 MAG. 4.447 4.468 4.491 4.510 4.540 4.572 4.624 4.664 4.729 4.781 4.843 4.945 4.999 5.062 5.114 5.142 5.160 5.146 5.123 5.113 5.063 5.006 4.954 4.865 4.783 4.664 4.529 4.384 4.255 4.117 S21 ANG. −14.9 −30.1 −44.9 −60.3 −74.9 −90.2 −105.3 −120.7 −136.1 −152.0 −167.9 175.8 159.5 143.0 126.4 109.5 92.7 75.4 58.0 41.3 24.0 6.9 −10.4 −27.7 −45.0 −62.3 −79.6 −96.6 −113.1 −129.6 MAG. 0.035 0.035 0.034 0.033 0.033 0.033 0.032 0.031 0.032 0.031 0.031 0.029 0.029 0.028 0.029 0.029 0.029 0.030 0.032 0.035 0.036 0.038 0.041 0.045 0.048 0.049 0.052 0.054 0.056 0.057 S12 ANG. −12.7 −23.0 −32.1 −42.5 −50.1 −59.6 −69.3 −78.4 −86.6 −94.9 −103.9 −111.0 −120.2 −128.9 −133.1 −140.9 −146.2 −151.4 −159.7 −168.3 −175.7 175.2 165.2 155.3 143.6 131.2 119.8 108.7 95.5 83.6 MAG. 0.113 0.119 0.136 0.142 0.156 0.161 0.161 0.176 0.192 0.228 0.256 0.290 0.308 0.322 0.327 0.333 0.344 0.356 0.371 0.378 0.383 0.378 0.367 0.359 0.356 0.359 0.366 0.374 0.372 0.361 S22 ANG. −3.1 1.2 1.6 6.5 10.1 12.7 8.8 6.2 1.9 0.1 −0.6 −1.1 −0.3 −1.4 −2.2 −4.8 −7.0 −9.7 −11.1 −12.0 −12.8 −13.6 −16.1 −18.0 −21.1 −23.6 −26.2 −28.6 −31.1 −35.0 3.18 3.21 3.23 3.34 3.32 3.34 3.33 3.36 3.27 3.29 3.15 3.24 3.16 3.18 3.08 3.07 3.02 2.88 2.70 2.51 2.39 2.27 2.13 1.99 1.88 1.85 1.76 1.72 1.68 1.69 K 10 Data Sheet P11510EJ3V0DS00 µPC2711TB, µPC2712TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)  µPC2712TB  CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 18 Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 20 18 Circuit Current ICC (mA) No input signal No input signal VCC = 5.0 V 16 14 12 10 8 6 4 2 0 1 4 2 3 Supply Voltage VCC (V) 5 6 16 14 12 10 8 6 4 2 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (˚C) NOISE FIGURE, POWER GAIN vs. FREQUENCY 30 25 POWER GAIN vs. FREQUENCY VCC = 5.0 V 10 Power Gain GP (dB) Noise Figure NF (dB) 25 GP 20 Power Gain GP (dB) VCC = 5.0 V VCC = 4.5 V VCC = 5.5 V –40°C +25°C 20 TA = +85°C 8 6 15 NF 10 VCC = 4.5 V 4 VCC = 5.5 V VCC = 5.0 V 15 0.1 2 5 0.1 0.3 1.0 Frequency f (GHz) 3.0 0.3 1.0 Frequency f (GHz) 3.0 ISOLATION vs. FREQUENCY 0 VCC = 5.0 V Input Return Loss RLin (dB) Output Return Loss RLout (dB) INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 VCC = 5.0 V –10 Isolation ISL (dB) RLin –10 –20 –20 RLout –30 –30 –40 –50 0.1 0.3 1.0 Frequency f (GHz) 3.0 –40 0.1 0.3 1.0 Frequency f (GHz) 3.0 Data Sheet P11510EJ3V0DS00 11 µPC2711TB, µPC2712TB  µPC2712TB  OUTPUT POWER vs. INPUT POWER +10 f = 1.0 GHz +5 Output Power Pout (dBm) 0 –5 –10 –15 –20 –25 –45 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 4.5 V VCC = 5.0 V 5.5 V Output Power Pout (dBm) +10 +5 0 OUTPUT POWER vs. INPUT POWER VCC = 5.0 V f = 1.0 GHz +85°C TA = +25°C –5 –10 –15 –20 –25 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) –40°C 0 +5 0 +5 OUTPUT POWER vs. INPUT POWER +10 f = 2.0 GHz +5 Output Power Pout (dBm) 0 –5 –10 –15 –20 –25 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 4.5 V VCC = 5.0 V 5.5 V Output Power Pout (dBm) +10 OUTPUT POWER vs. INPUT POWER VCC = 5.0 V +5 0 –5 –10 –15 –20 –25 –45 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) f = 1.0 GHz f = 2.0 GHz f = 0.5 GHz 0 +5 0 +5 SATURATED OUTPUT POWER vs. FREQUENCY +10 Saturated Output Power PO(sat) (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 50 f1 = 1.000 GHz f2 = 1.002 GHz 40 VCC = 5.0 V 30 5.5 V Pin = –2 dBm 5.5 V +5 0 4.5 V VCC = 5.0 V 20 4.5 V 10 –5 –10 0.1 0.3 1 3 0 –16 –14 –12 –10 –8 –6 –4 –2 0 Frequency f (GHz) Output Power of Each Tone PO(each) (dBm) Remark The graphs indicate nominal characteristics. 12 Data Sheet P11510EJ3V0DS00  µPC2712TB  S22-FREQUENCY S11-FREQUENCY 0.1 5 0.4 5 0.0 5 0.4 5 0.0 -1 40 0.1 →WAVELENGT NG HS 0 0.01 THS TOW T 0.49 ARD 0.02 OWARD 0.48 0 0.49 GE 0.01 0.0 GENE 0.48 ← 7 3 NERA 0.02 RA 0.4 ION COEFFICIENT IN D TO 0.4 OF REFLECT 3. EGREE 7 0.0 TOR R→ 6 0.0 ANGLE S → 0.4 4 0.4 4 60 -1 0 6 0.0 0.0 0.4 5 15 50 0 5 -1 0.3 0.3 44 0. 06 0. 0.1 40 -1 POS ITIV 0. 0. 06 44 0.2 →WAVELENGT NG HS 0 0.01 THS TOW T 0.49 ARD 0.02 OWARD 0.48 0 0.49 GE 0.01 0.0 GENE 0.48 ← 7 3 NERA 0.02 RA 0.4 CTION COEFFICIENT IN D TO 0.4 OF REFLE 3. EGREE 7 0.0 TOR R→ 6 0.0 ANGLE S → 0.4 4 0.4 4 60 -1 0 6 0.0 0.0 0.4 5 15 50 0 5 -1 0.2 0.1 0.1 0.1 0.2 0.2 44 0. 06 0. POS ITIV 0. 0. 06 44 4 0. 07 0. 43 0. 0. 0. 43 07 0. 4 0.3 0.3 07 0. 43 0. 30 30 0.2 0.2 0. 0. 43 07 0. 0. 4 4 13 0 13 0 -1 8 0.0 2 0.4 0.4 0.0 2 8 8 0.0 2 0.4 NE EG A 0.4 0.0 2 8 0 0 0.3 0.3 0.4 0.5 0.6 NE EG A 0.5 NT ONE MP CO CE AN CT X  EA –J  E R  Zo  TIV 14 0 ER E AC T  AN  +JX CE C OM Zo  PO  -1 0.5 0.5 0.6 ENT PON OM EC NC  TA AC – JX  E E R  Zo  TI V 14 0 ER E AC T  AN  + JX CE C Zo  OM PO  NE NT NE NT 0.5 12 0 12 0 -12 9 0.0 1 0.4 0.4 1 0.0 9 9 0.0 1 0.4 0.4 1 0.0 9 S-PARAMETERS (TA = +25°C, VCC = 5.0 V) 0.6 0.4 0.6 -12 0.6 110 110 -110 0.40 0.10 0.40 0.10 -110 0.7 0.10 0.40 0.10 0.40 0.7 0.5 0.7 0.8 0.8 0.7 0.8 0.6 0.39 0.11 0.39 0.11 0.11 0.39 0.11 0.39 -100 0.9 -100 0.7 0.8 0.7 0.8 0.9 1.0 1.0 0.9 100 0.9 100 0.8 0.9 0.12 0.38 0.38 0.12 0.12 0.38 0.38 0.12 3.0 G 0.9 2.5 G 1.0 -90 0.2 0.2 0.2 0.4 0.2 RESISTANCE COMPONENT R 0.2  Zo  -90 RESISTANCE COMPONENT R 0.2  Zo  1.0 1.0 1.0 90 90 0.2 0.2 0.4 0.4 0.4 0.37 0.13 0.37 0.13 0.13 0.37 0.4 0.13 0.37 0.6 0.6 0.6 1.2 1.2 0.4 0.4 8 0.4 0.6 0. 0. 0. 0.8 0.8 0. 0.8 1.2 1.2 1.4 1.2 1.4 8 0.6 0.6 0.6 1.2 0.8 8 8 80 80 -80 -80 2.0 G 0.6 1.0 0.14 0.36 0.36 0.14 1.0 0.1 G 3.0 G 0.1 G 1.4 1.4 1.8 2.0 1.4 0.36 0.14 1. 1.6 0.14 0.36 0 1. 0 1. 0 1.6 1.8 2.0 1. 0 1.0 1.0 1.4 70 1.0 G 70 -70 0.15 0.35 0.35 0.15 -70 0.15 0.35 1.0 G 4 0.3 6 0.1 4 0.3 6 0.1 -60 3 0.3 7 0.1 0 0 5.0 3 0.3 7 0.1 2.0 4.0 2.0 -60 -5 0 -5 32 0. 18 0. 32 0. 18 0. 0 3. 3. 4.0 4.0 5.0 5.0 10 20 10 20 50 50 µPC2711TB, µPC2712TB 0 0.2 0 0.3 1 0.2 9 0.2 2 0.2 8 0.2 20 0.23 0.27 10 0.24 0.26 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 -20 0.2 8 0.2 2 0.2 0.2 9 1 0.3 0.2 0 0 0 0.2 0 0.3 50 50 30 -30 1 0.2 9 0.2 30 20 20 19 0. 31 0. 40 -4 0 0. 0. 31 19 19 0. 31 0. 40 2 0.2 8 0.2 20 0.23 0.27 10 0.24 0.26 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 -20 0.2 8 0.2 2 -30 0.2 0.2 9 1 0.3 0.2 0 0 -4 0 0. 0. 31 19 Data Sheet P11510EJ3V0DS00 1.6 1.6 0.35 0.15 1.6 1.6 3.0 0.1 6 0.3 4 0.1 6 0.3 4 1.8 3.0 1.8 1.8 1.8 60 0.1 0.3 7 3 0. 0. 18 32 60 2.0 2.0 4.0 5.0 0.1 0.3 7 3 50 50 0. 0. 18 32 3. 0 3. 0 10 10 4.0 4.0 5.0 5.0 10 10 20 20 50 50 13 µPC2711TB, µPC2712TB TYPICAL S-PARAMETER VALUES (TA = +25°C) µPC2712TB VCC = 5.0 V, ICC = 13.9 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 MAG. 0.303 0.291 0.295 0.276 0.265 0.243 0.222 0.219 0.230 0.267 0.290 0.316 0.317 0.314 0.296 0.290 0.278 0.282 0.284 0.280 0.273 0.244 0.222 0.189 0.177 0.164 0.158 0.143 0.128 0.111 S11 ANG. −8.1 −10.1 −11.8 −11.3 −11.0 −12.3 −20.3 −25.4 −33.9 −35.5 −35.5 −33.2 −30.6 −29.4 −28.1 −29.4 −31.1 −34.9 −35.5 −36.6 −36.0 −38.2 −40.0 −45.7 −52.9 −57.4 −59.6 −53.9 −44.3 −22.2 MAG. 8.864 8.827 8.936 9.044 9.051 9.096 9.089 9.080 9.096 9.044 9.197 9.421 9.524 9.512 9.574 9.598 9.480 9.372 9.193 9.198 9.011 8.784 8.717 8.388 8.217 7.890 7.597 7.313 7.078 6.806 S21 ANG. −16.7 −33.5 −49.5 −67.6 −82.2 −98.8 −115.2 −131.5 −147.6 −164.2 179.5 162.4 144.9 126.6 109.1 91.1 72.9 54.3 35.6 18.4 0.1 −17.9 −35.1 −52.9 −70.1 −87.4 −104.6 −121.4 −138.4 −154.9 MAG. 0.023 0.023 0.022 0.023 0.023 0.023 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.026 0.026 0.027 0.028 0.029 0.030 0.031 0.033 0.033 0.034 0.036 0.037 0.039 0.041 0.041 0.043 0.046 S12 ANG. −11.4 −19.2 −25.5 −34.6 −42.8 −50.0 −59.8 −66.2 −73.0 −82.9 −89.5 −98.4 −107.0 −115.7 −122.3 −133.2 −139.4 −148.1 −157.6 −167.4 −175.1 176.5 164.8 154.8 143.5 133.3 123.8 114.0 101.4 90.2 MAG. 0.043 0.055 0.078 0.095 0.112 0.120 0.120 0.136 0.155 0.189 0.212 0.240 0.245 0.248 0.236 0.231 0.221 0.215 0.199 0.170 0.134 0.090 0.050 0.025 0.039 0.071 0.099 0.131 0.149 0.157 S22 ANG. 2.3 11.5 8.5 13.4 13.6 11.1 1.7 −6.0 −14.4 −17.5 −19.9 −21.4 −23.2 −27.1 −31.8 −38.0 −43.8 −49.8 −53.0 −55.3 −56.2 −55.2 −53.7 1.8 33.4 39.3 34.3 26.0 22.8 19.4 2.32 2.35 2.38 2.33 2.37 2.35 2.37 2.38 2.39 2.26 2.12 2.02 1.94 1.82 1.78 1.74 1.72 1.69 1.70 1.69 1.68 1.74 1.74 1.75 1.74 1.72 1.70 1.72 1.70 1.70 K 14 Data Sheet P11510EJ3V0DS00 µPC2711TB, µPC2712TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT : mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 Data Sheet P11510EJ3V0DS00 15 µPC2711TB, µPC2712TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The DC cut capacitor must be each attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit : None Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit : None Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit : None Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit : None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 16 Data Sheet P11510EJ3V0DS00 µPC2711TB, µPC2712TB [MEMO] Data Sheet P11510EJ3V0DS00 17 µPC2711TB, µPC2712TB [MEMO] 18 Data Sheet P11510EJ3V0DS00 µPC2711TB, µPC2712TB [MEMO] Data Sheet P11510EJ3V0DS00 19 µPC2711TB, µPC2712TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4