UPC2726T

DATA SHEET BIPOLAR NALOG NTEGRATED IRCUIT µPC2726T 1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The µPC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier. This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement equipment applications. This IC can also use as differential oscillator application. The µPC27×× series is manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. external pollution and prevent corrosion and migration. performance, uniformity and reliability. These materials can protect the chips from Thus, this process can produce the ICs with excellent FEATURES • Wide frequency respone − fU= 1.6 GHz @ −3 dB GP, VCC = 5 V • Power gain − GP = 15 dB @ 5 V • Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA • 6 pin mini mold for high-density surface mounting. ORDERING INFORMATION PART NUMBER PACKAGE 6 pin mini mold SUPPLYING FORM Embossed tape 8 mm wide. 3 kp/reel. Pin 1, 2, 3 face to perforation side of the tape. µPC2726T-E3 * For evaluation sample order, please contact your local NEC sales office. (Part number: µPC2726T) EQUIVALENT CIRCUIT VCC PIN CONNECTIONS (Top View) (Bottom View) RF OUT RF IN RF OUT RF IN 3 2 1 C1P 4 5 6 1. INPUT 2. GND 3. OUTPUT 4. OUTPUT 5. VCC 6. INPUT 4 5 6 3 2 1 GND Caution: Electro-static sensitive device Document No. P10873EJ2V0DS00 (2nd edition) (Previous No. IC-3125) Date Published March 1997 N Printed in Japan © 1994 PPC2726T ABSOLUTE MAXIMUM RATINGS Supply Voltage VCC Power Dissipation of Package Allowance P D 6 280 V mW TA = +25 °C Mounted on 50 u 50 u 1.6 mm epoxy glass PWB at TA = +85 °C TA = +25 °C Input Power Operating Temperature Storage Temperature Pin Topt Tstg 0 ð40 to +85 ð55 to +150 dBm °C °C RECOMMENDED OPERATING CONDITIONS PARAMETERS Supply Voltage Operating Temperature SYMBOL VCC TA MIN. 4.5 ð40 TYP. 5.0 +25 MAX. 5.5 +85 UNIT V °C ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5. V, ZL = ZS = 50 :) PARAMETERS Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Level SYMBOL ICC GP NF fU ISL RLin RLout PO(sat) ð5 1.0 MIN. 8.0 11.0 TYP. 11.5 15 4.5 1.6 60 2.0 4.0 ð2 MAX. 15.0 17.0 6.0 UNIT mA dB dB GHz dB dB dB dBm TEST CONDITIONS No input signal f = 400 MHz f = 400 MHz 3 dB down below flat gain at 0.4 GHz f = 400 MHz f = 400 MHz f = 400 MHz f = 400 MHz, Pin = ð10 dBm STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, ZL = ZS = 50 :) REFERENCE VALUE 2.5 4.5 5.1 2.4 58 1.0 4.0 ð14 ð29 ð45 PARAMETERS Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Power 3rd Order Intermodulation Distortion SYMBOL ICC GP NF fu ISL RLin RLout PO(sat) IM3 UNIT mA dB dB GHz dB dB dB dBm dBc TEST CONDITIONS VCC = 2 V, No input signal VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz 3 dB down below flat gain at 0.4 GHz VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz VCC = 2 V, f = 400 MHz, Pin = ð10 dBm VCC = 2 V, PO(each) = ð25 dBm, f1 = 400 MHz, f2 = 402 MHz VCC = 5 V, PO(each) = ð25 dBm, f1 = 400 MHz, f2 = 402 MHz 3rd Order Intermodulation Distortion IM3 dBc 2 PPC2726T TEST CIRCUITS DC Parameters VCC 5.0 V IN IN OUT OUT AC Parameters VCC 5.0 V 1 000 pF CIN1 (1 000 pF) IN CIN2 (1 000 pF) IN COUT1 (1 000 pF) OUT COUT2 (1 000 pF) OUT 3 PPC2726T TYPICAL CHARACTERISTICS (Unless otherwise specified TA = +25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 18 No input signals 16 VCC = 5.0 V 14 CIRCUIT CURRENT vs. OPERATING TEMPERATURE ICC – Circuit Current – mA ICC – Circuit Current – mA 2 3 4 VCC – Supply Voltage – V 6 16 14 12 10 8 6 4 2 0 1 5 12 10 8 6 4 2 0 –40 –20 0 20 40 60 80 100 Topt – Operating Temperature – °C NOISE FIGURE, POWER GAIN vs. FREQUENCY POWER GAIN vs. FREQUENCY 20 –40 °C +25 °C GP – Power Gain – dB 20 GP 10 GP – Power Gain – dB VCC = 5.5 V 5.0 V 4.5 V 3.0 V 2.0 V 10 VCC = +85 °C NF – Noise Figure – dB 9 7 0 NF 5 3 1 0.1 VCC = 2.0 V VCC = 4.5 V - 5.5 V 0 VCC = 5.0 V 0.3 1.0 2.0 3.0 –5 0.1 0.3 1.0 2.0 3.0 f – Frequency – GHz f – Frequency – GHz ISOLATION vs. FREQUENCY 0 RETURN LOSS vs. FREQUENCY 0 RLin RLout –10 RLout RLin VCC = 5.0 V ISL – Isolation – dB –20 RLin – Input Return Loss – dB RLout – Output Return Loss – dB 0.3 1.0 2.0 3.0 –40 –20 –60 –30 –80 0.1 –40 0.1 0.3 1.0 2.0 f – Frequency – GHz f – Frequency – GHz 4 PPC2726T OUTPUT POWER vs. INPUT POWER 10 f = 400 MHz PO – Output Power – dBm OUTPUT POWER vs. INPUT POWER 10 VCC = 5.0 V f = 400 MHz 0 TA = +25 °C PO – Output Power – dBm 0 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V TA = +85 °C –10 –10 TA = –40 °C –20 VCC = 2.0 V –30 –20 –30 –40 –50 –40 –30 –20 –10 0 –40 –50 –40 –30 –20 –10 0 Pin – Input Power – dBm Pin – Input Power – dBm OUTPUT POWER vs. INPUT POWER 10 f = 1 GHz PO – Output Power – dBm OUTPUT POWER vs. INPUT POWER 10 VCC = 5.0 V PO – Output Power – dBm 0 VCC = 5.5 V VCC = 5.0 V 0 –10 VCC = 4.5 V –10 f = 400 MHz –20 –20 VCC = 2.0 V –30 –30 f = 1 GHz –40 –50 –40 –30 –20 –10 0 –40 –50 –40 –30 –20 –10 0 Pin – Input Power – dBm SATURATED OUTPUT POWER vs. FREQUENCY 0 PO(sat) – Saturated Output Power – dBm Pin – Input Power – dBm 3rd ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 60 f1 = 400 MHz f2 = 402 MHz 50 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V –2 –4 –6 –8 –10 –12 VCC = 2.0 V –14 –16 –18 –20 0.1 0.2 0.5 1 2 3 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V IM3 – 3rd Order Intermodulation Distortion – dBc 40 30 VCC = 2.0 V 20 10 –40 –30 –20 –10 0 f – Frequency – GHz PO(each) – Output Power of Each Tone – dBm 5 0.1 0.1 0.2 0.2 0.3 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 0.4 EFLECTION COEFFCIENT R 0.0TOR 3 6 IN DE 7 LE OF 0.0 4 GRE ANG 0.4 0.4 ES 0 160 4 – 6 0.0 0.0 45 15 0. 5 0.4 5 50 0 –1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. –1 EA OM C 0.1 0.1 0.2 C GTHS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 0.4 EFLECTION COEFFCIENT 0.0TOR 3 IN DE 7 E OF R 0.0 .46 4 NGL GRE 0 0A 0.4 ES 0 4 –16 6 0.0 0.0 45 15 0. 5 0.4 5 50 0 –1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. –1 EA OM C 0.3 0.3 0. 0. 0. –1 –1 NE G 0.4 02 .08 0 00 .43 0. 07 30 NE G 8 0.0 2 0.4 0.4 02 .08 0 00 .43 0. 07 30 0. 5 E IV AT N 0. 5 5 0. 12 0 0 – –1 2 0. 4 4 0.4 1 0.0 9 0.4 1 0.0 9 0.40 0.10 –11 0 0.40 0.10 –11 0 0.38 0.39 0.12 0.11 –100 –90 0.2 0.2 0.2 0.2 0.4 0.4 0.4 0.13 0.37 0.37 0.13 0.13 0.37 0.38 0.37 0.39 0.12 0.13 0.11 –90 –100 0.6 0.6 1.2 1.2 0.6 0.4 0.6 0.6 8 0. 0. 0.8 0.8 1.2 0.2 1.2 0. 1.4 0.8 1. 1.4 8 0 0 1. 0.14 0.36 80 0.36 0.04 –80 0.36 0.04 –80 0.14 0.36 80 1.6 0 1. –70 –70 0.35 0.15 0.35 0.15 0 0 4 0.3 6 0.1 4 0.3 6 0.1 –6 –6 0.1 3 0.3 7 0.1 3 0.3 7 0 0 –5 –5 32 18 0. 32 18 0. 0. 18 32 0. 0. 0 0 3. 4.0 6.0 6.0 10 20 400 M 10 20 50 50 0.2 2 100 M 0.2 0 1 0 .2 9 0.2 0.2 8 20 0.23 0.27 10 0.24 0.26 0.25 0.25 0 0.26 0.24 –10 0.27 0.2 0.23 8 0.2 2 –20 0.2 00 9 0.2 0.3 1 –3 0.2 0 0 0 0.2 0 50 50 20 0.3 0 30 0.3 0 1 0.2 9 0.2 30 20 6.0 20 19 0 . 31 0. 0. 0. 31 19 19 0. 31 0. 4.0 4.0 40 –4 40 400 M 0 100 M 3. 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0.25 0.25 0 0.26 0.24 –10 0.27 0.23 0.2 8 0.2 2 –20 0.2 00 9 0.2 0.3 1 – 0.2 0 0 30 –4 0 0. 0. 31 19 6 S22-FREQUENCY WAVELE N S PARAMETER S11-FREQUENCY WAVELE NG 0.2 0.3 C 0. 0. 4 07 0. 07 43 0. 0 13 4 E NC TA AC – JX– – RE ––ZO ( E IV AT 0.3 ) 0.2 O ( –Z–+–J–XTANCE CO ) MPO E NC TA AC – JX– – RE ––ZO ( 0.4 ) 0.2 43 0 13 ( –Z–+–J–XTANCE CO ) MPO O N 5 0. T EN T EN 0.3 0 12 8 0.0 2 0.4 20 1 0.6 0.6 9 0.0 1 0.4 9 0.0 1 0.4 0.4 0.7 0.7 0.6 0.6 0.10 0.40 110 0.10 0.40 110 0.7 0.5 0.5 0.7 ( ( 0.8 0.8 0.8 0.6 0.6 0.8 ) 0.11 0.39 100 0.11 0.39 100 0.7 0.8 0.9 0.9 0.7 0.8 0.9 0.9 ) 0.9 0.12 0.38 0.12 0.38 0.9 REACTANCE COMPONENT R –––– 0.2 ZO REACTANCE COMPONENT R –––– 0.2 ZO 1.0 90 90 1.0 0.2 1.0 1.0 1.0 0.2 1.0 0.4 0.4 0.4 0.6 0.4 0.6 0.6 0. 0 1. 1.4 1.4 0.2 8 0.8 8 1.8 2.0 1. 0 1. 0 1.6 1.8 2.0 1. 0 1. 0 1.4 1.4 70 0.15 0.35 1G 0.15 0.35 70 1.6 1.6 1.6 1.6 0.1 6 0.3 4 0.1 6 0.3 4 1.8 3.0 1.8 1.8 3.0 1.8 6 00 6 00 0.1 0.3 7 3 0.1 0.3 7 3 2.0 4.0 5.0 2.0 2.0 4.0 5.0 2.0 50 50 0. 0. 1G 3. 0 10 0. 18 32 3. 0 10 4.0 6.0 10 10 50 20 50 PPC2726T PPC2726T ILLUSTRATION OF THE EVALUATION BOARD FOR TEST CIRCUIT 3.5 4 7 16- φ 2.3 10.2 7 5.5 10 23 14 16.5 4 11 7.2 1.2 14 11 3 1 1.2 (8.8) 9- φ 0.8 (6) 5 11.2 22 135° 23 9 14 35 1.8 9 2.03 7.23 1.8 0.74±0.02 18.9 2 2.06±0.02 9 14 2 2 3.8 1 6 4 8 11 1.8 1 1.2 20.24 12.5 14 1.52 11.5 7 42 8.24 4 3.5 Note 7.23° 2 2 2 2.03 2 135° 1.51 2 2 (1) 50 × 50 × 0.5 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) : Through holes 2 2 3.51 0. 29 0. 74 DETAIL LAYOUT 2.03 t = 0.4 7.28° 0. 74 142.23° (4.83) 18.16±0.02 5 12 1 2.06±0.02 0.74±0.02 5.44 2.4 1 2.03 2.06±0.02 2.03 2.03 2.03 2.03 2.03 45 ° 7 PPC2726T EXAMPLE FOR SYSTEM APPLICATION DBS tuner DC AMP DET 1st IF input RF amp. ATT RF amp. MIX. IF amp. Sound Visual < From ODU. > µ PC2723T µ PC2726T FM DEMO VCO OP LPF PLL 8 PPC2726T 6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm) 0.3 +0.1 –0.05 0.13±0.1 1 2.8 –0.3 1.5 –0.1 +0.2 +0.2 2 3 0 to 0.1 6 5 0.95 4 0.95 0.8 1.1 –0.1 +0.2 1.9 2.9±0.2 9 PPC2726T NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the V CC pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. PPC2726T Recommended condition symbols IR35-00-3 Soldering process Infrared ray reflow Soldering conditions Package peak temperature: 235 °C, Hour: within 30 s. (more than 210 °C), Time: 3 times, Limited days; no.* Package peak temperature: 215 °C, Hour: within 40 s. (more than 200 °C), Time: 3 times, Limited days: no.* Soldering tub temperature: less than 260 °C, Hour: within 10 s. Time: 1 time, Limited days: no. Pin area temperature: less than 300 °C, Hour: within 3 s. Limited days: no.* VPS VP15-00-3 Wave soldering WS60-00-1 Pin part heating *: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 10 PPC2726T [MEMO] 11 PPC2726T The applicatoin circuit and circuit constants shown in this document are for reference only and may not be employed for mass production of the application system. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.