UPC2763TB-E3

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2762TB,µPC2763TB,µPC2771TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. Each of the ICs is packaged in super minimold package which is smaller than conventional minimold. The µPC2762TB, µPC2763TB and µPC2771TB have compatible pin connections and performance to µPC2762T, µPC2763T and µPC2771T of conventional minimold version. So, in the case of reducing your system size, µPC2762TB, µPC2763TB and µPC2771TB are suitable to replace from µPC2762T, µPC2763T and µPC2771T. These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) • Supply voltage • Medium output power : VCC = 2.7 to 3.3 V : µPC2762TB: PO(1 dB) = +8.0 dBm TYP. @ 0.9 GHz µPC2763TB: PO(1 dB) = +9.5 dBm TYP. @ 0.9 GHz µPC2771TB: PO(1 dB) = +11.5 dBm TYP. @ 0.9 GHz • Power gain : µPC2762TB: GP = 13 dB TYP. @ 0.9 GHz µPC2763TB: GP = 20 dB TYP. @ 0.9 GHz µPC2771TB: GP = 21 dB TYP. @ 0.9 GHz APPLICATIONS • Buffer amplifiers for mobile telephones : µPC2762TB, µPC2763TB • PA driver for PDC800M : µPC2771TB ORDERING INFORMATION Part Number Package Marking C1Z 6-pin super minimold C2A C2H Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape. Qty 3 kp/reel. µPC2762TB-E3 µPC2763TB-E3 µPC2771TB-E3 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2762TB, µPB2763TB, µPC2771TB) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12710EJ2V0DS00 (2nd edition) Date Published June 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1997, 1999 µPC2762TB, µPC2763TB, µPC2771TB PIN CONNECTIONS (Top View) (Bottom View) 4 5 6 4 5 6 3 2 1 Pin No. 1 2 3 4 5 Marking is an example of µPC2762TB 6 Pin Name INPUT GND GND OUTPUT GND VCC 2 1 PRODUCT LINE-UP (TA = +25 °C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω) fu (GHz) 2.9 PO (1 dB) (dBm) +8.0 PO (sat) (dBm) +9.0 GP (dB) 13 ICC (mA) 26.5 C1Z 3 Part No. Package 6-pin minimold Marking µPC2762T µPC2762TB µPC2763T µPC2763TB µPC2771T µPC2771TB C1Z 6-pin super minimold 2.7 +9.5 +11.0 20 27.0 6-pin minimold C2A 6-pin super minimold 2.2 +11.5 +12.5 21 36.0 6-pin minimold C2H 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Notice The package size distinguishes between minimold and super minimold. 2 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB SYSTEM APPLICATION EXAMPLE Digital cellular telephone RX I Q DEMO ÷N SW PLL PLL I 0° TX PA µ PC2762TB or µ PC2763TB µ PC2771TB Phase shifter 90 ° Q Note The insertion point is different due to the specifications of conjunct devices. For conjunction with your devices, refer to the data sheets to confirm their conbination. Data Sheet P12710EJ2V0DS00 3 µPC2762TB, µPC2763TB, µPC2771TB PIN EXPLANATION Applied Voltage (V) – Pin Voltage (V) Note Pin No. 1 Pin Name Function and Applications Internal Equivalent Circuit INPUT 1.31 1.01 0.97 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. Signal output pin. The inductor must be attached between VCC and output pins to supply current to the internal output transistors. 6 4 OUTPUT Voltage as same as VCC through external inductor 2.7 to 3.3 – 4 1 * 6 VCC – Power supply pin, which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 3 GND 2 5 GND 2 3 5 GND 0 – * µ PC2762TB does not have this capacitance. Note Pin voltage is measured at VCC = 3.0 V. Above: µPC2762TB, Center: µPC2763TB, Below: µPC2771TB. 4 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB ABSOLUTE MAXIMUM RATINGS Ratings Parameter Symbol Conditions µPC2762TB µPC2763TB 3.6 70 200 µPC2771TB Unit Supply Voltage Total Circuit Current Power Dissipation VCC ICC PD TA = +25 °C, pin 4 and 6 TA = +25 °C Mounted on double copper clad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85 °C V 77.7 mA mW Operating Ambient Temperature Storage Temperature Input Power TA −40 to +85 −55 to +150 TA = +25 °C +10 +13 °C °C dBm Tstg Pin RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Symbol VCC MIN. 2.7 −40 TYP. 3.0 MAX. 3.3 Unit V Remark Same voltage should be applied to pin 4 and 6. − Only for µPC2771TB Operating Ambient Temperature Operating Frequency TA +25 − +85 °C fopt 0.8 1.9 GHz Data Sheet P12710EJ2V0DS00 5 µPC2762TB, µPC2763TB, µPC2771TB ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω) µPC2762TB, µPC2763TB µPC2762TB Parameter Circuit Current Power Gain Symbol ICC GP Test Conditions MIN. No signal f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz 3 dB down below from gain at f = 0.1 GHz f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz − 11 11.5 − − 2.7 TYP. 26.5 13 15.5 6.5 7.0 2.9 MAX. 35.0 16 17.5 8.0 9.0 − MIN. − 18 18 − − 2.3 TYP. 27.0 20 21 5.5 5.5 2.7 MAX. 35.0 23 24 7.0 7.5 − mA dB µPC2763TB Unit Noise Figure NF dB Upper Limit Operating Frequency fu GHz Isolation ISL 22 20 6.0 5.5 8.0 9.0 +5.5 +4.5 27 25 9.0 8.5 11.0 12.0 +8.0 +7.0 − − − − − − − − 25 24 8.0 8.0 5.0 6.0 +7.0 +4.0 30 29 11.0 11.0 7.0 9.0 +9.5 +6.5 − − − − − − − − dB Input Return Loss RLin dB Output Return Loss RLout dB 1 dB Gain Compression Output Level PO (1 dB) dBm µPC2771TB µPC2771TB Parameter Circuit Current Power Gain Symbol ICC GP No signal f = 0.9 GHz f = 1.5 GHz f = 0.9 GHz f = 1.5 GHz 3 dB down below from gain at f = 0.1 GHz Test Conditions MIN. − 19 18 − − 1.8 TYP. 36.0 21 21 6.0 6.0 2.2 MAX. 45.0 24 24 7.5 7.5 − − − − − − − − − − − mA dB Unit Noise Figure NF dB Upper Limit Operating Frequency Isolation fu GHz ISL f = 0.9 GHz f = 1.5 GHz f = 0.9 GHz f = 1.5 GHz f = 0.9 GHz f = 1.5 GHz f = 0.9 GHz f = 1.5 GHz f = 0.9 GHz f = 1.5 GHz 25 25 10 10 6.5 5.5 +9.0 +7.0 − − 30 30 14 14 9.0 8.5 +11.5 +9.5 +12.5 +11 dB Input Return Loss RLin dB Output Return Loss RLout dB 1 dB Gain CompresSion Output Level Saturated Output Power Level PO (1 dB) dBm PO (sat) dBm 6 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω) µPC2762TB, µPC2763TB Reference Parameter Symbol Test Conditions MIN. µPC2762TB TYP. MAX. MIN. µPC2763TB TYP. MAX. Unit Saturated Output Power Level Adjacent channel power PO (sat) f = 0.9 GHz f = 1.9 GHz ∆f = ±50 kHz ∆f = ±100 kHz − − − − − − +9.0 +8.5 −64 −64 −16 −10 − − − − − − − − − − − − +11.0 +8.0 −61 −62 −27 −14 − − − − − − dBm Padj f = 0.9 GHz Note π/4 QPSK wave PO = +4 dBm dBc Third order intermodulation distortion IM3 2 sine wave input. Output of each tone PO (each) = +4 dBm f1 = 0.900 GHz f2 = 0.902 GHz f1 = 1.900 GHz f2 = 1.902 GHz dBc dBc µPC2771TB Reference Parameter Symbol Test Conditions MIN. µPC2771TB TYP. MAX. Unit Adjacent channel power 1 Padj1 f = 0.9 GHz Note π/4 QPSK wave PO = +7 dBm ∆f = ±50 kHz ∆f = ±100 kHz ∆f = ±50 kHz ∆f = ±100 kHz − − − − − − −61 −72 −59 −71 −18 −12 − − − − − − dBc Adjacent channel power 2 Padj2 f = 1.5 GHz Note π/4 QPSK wave PO = +7 dBm dBc Third order intermodulation distortion IM3 2 sine wave input. Output of each tone PO (each) = +7 dBm f1 = 0.900 GHz f2 = 0.902 GHz f1 = 1.500 GHz f2 = 1.502 GHz dBc dBc Note π/4 DQPSK modulated wave input, data rate 42 kbps, Filter roll off α = 0.5, PN 9 Data Sheet P12710EJ2V0DS00 7 µPC2762TB, µPC2763TB, µPC2771TB TEST CIRCUIT VCC 1 000 pF C3 6 50 Ω IN 1 000 pF C1 1 4 L C2 1 000 pF 50 Ω OUT 2, 3, 5 COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 C3 L Bias Tee Capacitor Bias Tee Value 1 000 pF 1 000 pF 1 000 nH EXAMPLE OF ACTUAL APPLICATION COMPONENTS Type C1 to C3 L Chip capacitor Chip inductor Value 1 000 pF 100 nH 10 nH Operating Frequency 100 MHz or higher 100 MHz or higher 2.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get enough gain. In this case, large inductance and Q is suitable. For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a peak in the operating frequency band, and suppressed at lower frequencies. The recommendable inductance can be chosen from example of actual application components list as shown above. CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias can be supplied against Vcc fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2πRfc). 8 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 Top View 3 1 IN → 5 4 1Z OUT C L 2 C C Mounting direction (Marking is an example for PC2762TB) VCC C COMPONENT LIST Value C L 1 000 pF Example: 10 nH 6 Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E). Data Sheet P12710EJ2V0DS00 9 µPC2762TB, µPC2763TB, µPC2771TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C) − µPC2762TB − CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 50 No signal VCC = 3.0 V 40 Circuit Current ICC (mA) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 50 No signal 40 Circuit Current ICC (mA) 30 30 20 20 10 10 0 1 2 3 Supply Voltage VCC (V) NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 4 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (°C) INSERTION POWER GAIN vs. FREQUENCY 18 20 18 Insertion Power Gain GP (dB) VCC = 3.3 V Insertion Power Gain GP (dB) 16 14 12 10 8 6 4 2 0.1 NF GP VCC = 3.0 V VCC = 2.7 V 16 TA = +85 °C 14 TA = +25 °C 12 TA = –40 °C 10 VCC = 3.0 V Noise Figure NF (dB) 10 8 6 4 2 VCC = 3.3 V VCC = 3.0 V 0.3 VCC = 2.7 V 1.0 3.0 8 0.1 0.3 1.0 Frequency f (GHz) INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 VCC = 3.0 V RLin Input Return Loss RLin (dB) Output Return Loss RLout (dB) 3.0 Frequency f (GHz) ISOLATION vs. FREQUENCY 0 VCC = 3.0 V –10 Isolation ISL (dB) –10 –20 –20 RLout –30 –30 –40 0.1 1.0 0.3 Frequency f (GHz) 3.0 –40 0.1 0.3 1.0 3.0 Frequency f (GHz) 10 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB − µPC2762TB − OUTPUT POWER vs. INPUT POWER +15 f = 0.9 GHz +10 Output Power Pout (dBm) VCC = 3.3 V +5 VCC = 2.7 V 0 Output Power Pout (dBm) VCC = 3.0 V +10 +15 f = 0.9 GHz VCC = 3.0 V TA = +85 °C TA = +25 °C OUTPUT POWER vs. INPUT POWER +5 TA = –40 °C 0 –5 –5 –10 –20 –15 –10 –5 0 +5 –10 –20 –15 –10 –5 0 +5 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER +15 f = 1.9 GHz +10 Output Power Pout (dBm) VCC = 3.3 V +5 VCC = 2.7 V 0 Output Power Pout (dBm) VCC = 3.0 V +10 +15 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER f = 1.9 GHz VCC = 3.0 V TA = +85 °C TA = +25 °C +5 TA = –40 °C 0 –5 –5 –10 –20 –15 –10 –5 0 +5 –10 –20 –15 Input Power Pin (dBm) SATURATED OUTPUT POWER vs. FREQUENCY +13 VCC = 3.3 V Saturated Output Power PO (sat) (dBm) +11 VCC = 3.0 V +9 VCC = 2.7 V +7 Pin = +3 dBm Saturated Output Power PO (sat) (dBm) +11 +13 –10 –5 Input Power Pin (dBm) 0 +5 SATURATED OUTPUT POWER vs. FREQUENCY Pin = +3 dBm TA = +25 °C TA = +85 °C +9 TA = –40 °C +7 +5 +5 +3 0.1 +3 1.0 0.3 Frequency f (GHz) 3.0 0.1 0.3 1.0 Frequency f (GHz) 3.0 Data Sheet P12710EJ2V0DS00 11 µPC2762TB, µPC2763TB, µPC2771TB − µPC2762TB − THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE Third Order Intermodulation Distortion IM3 (dBc) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE Third Order Intermodulation Distortion IM3 (dBc) –60 f1 = 0.900 GHz f2 = 0.902 GHz –50 VCC = 3.3 V –40 –60 f1 = 1.900 GHz f2 = 1.902 GHz –50 VCC = 3.3 V –40 VCC = 3.0 V VCC = 3.0 V –30 VCC = 2.7 V –20 –30 VCC = 2.7 V –20 –10 –10 0 –15 –10 –5 0 +5 +10 0 –15 –10 –5 0 +5 +10 Output Power of Each Tone PO (each) (dBm) Output Power of Each Tone PO (each) (dBm) 12 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB S-PARAMETER (TA = +25 °C, VCC = Vout = 3.0 V) − µPC2762TB − S11-FREQUENCY 0.1 G 3.0 G 2.0 G S22-FREQUENCY 3.0 G 0.1G 2.0 G 1.0 G Data Sheet P12710EJ2V0DS00 13 µPC2762TB, µPC2763TB, µPC2771TB TYPICAL S-PARAMETER VALUES (TA = +25 °C) µPC2762TB VCC = Vout = 3.0 V, ICC = 29 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 S11 MAG. 0.338 0.346 0.348 0.340 0.329 0.324 0.341 0.359 0.378 0.375 0.363 0.353 0.357 0.377 0.402 0.414 0.426 0.434 0.448 0.463 0.483 0.492 0.492 0.486 0.489 0.500 0.511 0.511 0.494 0.465 0.441 ANG. −1.3 −2.0 −1.2 −1.9 −3.1 −6.2 −8.1 −7.6 −6.5 −5.1 −5.2 −6.7 −8.8 −11.7 −12.7 −13.2 −13.6 −16.1 −19.0 −21.7 −23.9 −25.8 −29.7 −34.6 −40.4 −44.6 −48.5 −50.4 −52.9 −55.9 −60.6 MAG. 4.560 4.581 4.616 4.661 4.689 4.726 4.844 4.927 5.057 5.179 5.306 5.400 5.567 5.706 5.820 5.987 6.081 6.182 6.229 6.328 6.382 6.431 6.424 6.329 6.146 5.997 5.822 5.693 5.553 5.334 5.157 S21 ANG. −3.4 −7.6 −11.3 −15.8 −19.5 −23.6 −27.4 −31.5 −35.8 −41.0 −45.9 −51.0 −56.5 −61.7 −68.0 −73.7 −80.1 −86.7 −93.2 −99.7 −106.7 −113.8 −121.2 −128.8 −136.1 −143.1 −149.9 −157.0 −163.0 −169.5 −175.5 MAG. 0.039 0.039 0.039 0.040 0.040 0.041 0.042 0.043 0.044 0.045 0.047 0.047 0.048 0.049 0.052 0.052 0.055 0.056 0.057 0.057 0.058 0.058 0.060 0.060 0.062 0.061 0.064 0.066 0.065 0.065 0.066 S12 ANG. 1.0 2.7 6.8 8.1 11.6 13.7 15.8 18.1 19.3 20.3 22.1 23.7 26.1 24.5 26.7 26.8 29.0 28.2 28.5 28.0 28.5 29.0 30.1 30.2 31.1 32.1 31.4 34.0 33.8 35.5 35.5 MAG. 0.310 0.311 0.302 0.296 0.290 0.292 0.291 0.292 0.284 0.280 0.285 0.288 0.288 0.285 0.282 0.285 0.288 0.291 0.286 0.282 0.282 0.282 0.278 0.268 0.260 0.251 0.248 0.237 0.222 0.203 0.189 S22 ANG. −5.5 −9.5 −12.3 −16.2 −20.2 −24.1 −26.2 −28.3 −30.9 −35.3 −40.0 −43.4 −45.7 −47.9 −52.8 −58.1 −62.0 −66.1 −70.4 −76.2 −81.5 −86.9 −91.7 −98.4 −104.5 −111.3 −116.7 −121.5 −128.3 −134.5 −141.1 2.23 2.20 2.20 2.18 2.20 2.12 2.01 1.90 1.77 1.72 1.64 1.62 1.54 1.44 1.32 1.27 1.18 1.14 1.09 1.07 1.01 0.99 0.99 1.01 1.02 1.05 1.03 1.04 1.11 1.20 1.27 K 14 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C) − µPC2763TB − CIRCUIT CURRENT vs. SUPPLY VOLTAGE 50 No signal 40 Circuit Current ICC (mA) Circuit Current ICC (mA) 40 50 No signal VCC = 3.0 V CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 30 30 20 20 10 10 0 3 1 2 Supply Voltage VCC (V) NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 4 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Operating Ambient Temperature TA (°C) INSERTION POWER GAIN vs. FREQUENCY 24 22 Insertion Power Gain GP (dB) TA = +85 °°C A = +85 C TA = +25 C TA= +25 °°C TA = –40 C TA= –40 °°C 24 22 Insertion Power Gain GP (dB) GP 20 18 16 14 12 10 NF 4 3 8 6 0.1 VCC = 3.3 V VCC = 3.3 20 TA = +25 C 18 TA= +25 °°C 16 14 12 10 8 TA = –40 C TA= –40 °°C TA = +85 C TA= +85 °°C VCC == 3.0 CC 3.0 V VCC = 2.7 V VCC = 2.7 Noise Figure NF (dB) 7 6 5 VCC = 3.3 CC = 3.3 V VCC == 3.0 CC 3.0 V VCC = 2.7 V VCC = 2.7 6 3.0 0.1 1.0 0.3 Frequency f (GHz) VCC = 3.0 V 3.0 1.0 0.3 Frequency f (GHz) ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 RLout RLo Input Return Loss RLin (dB) Output Return Loss RLout (dB) VCC = 3.0 V 0 VCC = 3.0 V –10 Isolation ISL (dB) –10 –20 –20 RLin –30 –30 –40 –50 0.1 0.3 1.0 3.0 –40 0.1 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) Data Sheet P12710EJ2V0DS00 15 µPC2762TB, µPC2763TB, µPC2771TB − µPC2763TB − OUTPUT POWER vs. INPUT POWER +15 +15 OUTPUT POWER vs. INPUT POWER VCC = 3.3 V f = 0.9 GHz +10 +10 f = 0.9 GHz VCC = 3.0 V TA = +85 °C Output Power Pout (dBm) Output Power Pout (dBm) +5 VCC = 3.0 V VCC = 2.7 V TA = –40 °C +5 TA = –40 °C TA = +25 °C 0 0 TA = +85 °C –5 –5 –10 –25 –20 –15 –10 –5 0 –10 –25 –20 –15 –10 –5 0 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER +15 +15 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER f = 1.9 GHz VCC = 3.0 V +10 f = 1.9 GHz +10 VCC = 3.3 V TA = +85 °C VCC = 3.0 V VCC = 2.7 V Output Power Pout (dBm) Output Power Pout (dBm) +5 +5 TA = –40 °C TA = +25 °C TA = –40 °C 0 0 TA = +85 °C –5 –5 TA = +25 °C –10 –25 –10 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 –20 –15 –10 –5 Input Power Pin (dBm) 0 SATURATED OUTPUT POWER vs. FREQUENCY +15 SATURATED OUTPUT POWER vs. FREQUENCY +15 TA = +85 °C +13 Pin = –3 dBm Saturated Output Power PO (sat) (dBm) +13 VCC = 3.3 V +11 Saturated Output Power PO (sat) (dBm) Pin = –3 dBm +11 TA = +25 °C TA = –40 °C +7 VCC = 3.0 V +9 +9 +7 VCC = 2.7 V +5 +3 0.1 +5 +3 0.1 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) 16 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB − µPC2763TB − THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE Third Order Intermodulation Distortion IM3 (dBc) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE Third Order Intermodulation Distortion IM3 (dBc) –60 f1 = 0.900 GHz f2 = 0.902 GHz –50 VCC = 3.3 V VCC = 3.0 V –60 f1 = 1.900 GHz f2 = 1.902 GHz –50 VCC = 3.3 V –40 VCC = 3.0 V –30 VCC = 2.7 V –20 –40 VCC = 2.7 V –30 –20 –10 0 –15 –10 0 –15 –10 –5 0 +5 +10 –10 –5 0 +5 +10 Output Power of Each Tone PO (each) (dBm) Output Power of Each Tone PO (each) (dBm) Data Sheet P12710EJ2V0DS00 17 µPC2762TB, µPC2763TB, µPC2771TB S-PARAMETER (TA = +25 °C, VCC = Vout = 3.0 V) − µPC2763TB − S11-FREQUENCY 0.1 G 3.0 G 2.0 G 1.0 G S22-FREQUENCY 3.0 G 0.1 G 2.0 G 1.0 G 18 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB TYPICAL S-PARAMETER VALUES (TA = +25 °C) µPC2763TB VCC = Vout = 3.0 V, ICC = 28 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 S11 MAG. 0.231 0.242 0.250 0.245 0.242 0.241 0.263 0.291 0.316 0.322 0.318 0.309 0.322 0.344 0.371 0.380 0.388 0.378 0.378 0.375 0.369 0.351 0.331 0.306 0.300 0.294 0.290 0.270 0.248 0.219 0.198 ANG. −1.4 −0.2 2.7 2.8 2.0 −2.2 −5.3 −5.6 −5.1 −4.0 −5.4 −9.0 −14.2 −20.6 −23.7 −27.5 −30.6 −36.4 −42.1 −46.6 −50.5 −53.8 −59.8 −66.4 −73.1 −75.8 −77.1 −77.7 −78.7 −82.3 −88.7 MAG. 10.210 10.305 10.464 10.655 10.863 11.093 11.544 11.843 12.291 12.676 13.066 13.311 13.661 13.845 13.824 13.890 13.634 13.236 12.724 12.290 11.707 11.130 10.524 9.824 9.152 8.583 8.029 7.610 7.240 6.827 6.516 S21 ANG. −3.8 −8.5 −12.9 −18.2 −22.8 −28.1 −33.2 −39.0 −45.1 −52.4 −59.8 −67.3 −75.8 −83.9 −93.0 −101.5 −110.5 −119.6 −127.9 −136.1 −144.0 −151.7 −159.1 −165.9 −172.3 −178.2 176.2 170.6 166.1 161.2 156.9 MAG. 0.023 0.023 0.024 0.024 0.026 0.027 0.028 0.029 0.029 0.030 0.031 0.031 0.033 0.033 0.035 0.035 0.036 0.035 0.035 0.035 0.035 0.036 0.036 0.034 0.035 0.034 0.035 0.037 0.039 0.039 0.040 S12 ANG. 2.4 7.8 9.3 13.4 16.1 19.9 22.3 22.5 23.9 25.6 24.1 27.0 28.8 28.5 30.1 28.1 29.2 29.9 30.9 32.9 33.0 35.7 36.8 38.7 40.1 43.8 46.3 47.7 51.1 53.6 55.1 MAG. 0.406 0.412 0.407 0.407 0.405 0.414 0.419 0.424 0.424 0.425 0.438 0.442 0.441 0.434 0.435 0.439 0.439 0.428 0.411 0.393 0.385 0.373 0.359 0.336 0.321 0.306 0.299 0.288 0.270 0.253 0.244 S22 ANG. −4.1 −7.5 −9.9 −13.9 −17.6 −21.6 −24.6 −27.7 −31.9 −37.1 −42.5 −47.8 −51.2 −56.0 −62.2 −68.9 −74.6 −81.3 −87.0 −93.4 −99.6 −104.9 −110.3 −117.5 −123.3 −129.4 −133.9 −138.6 −143.6 −150.1 −156.2 1.68 1.66 1.58 1.55 1.44 1.37 1.25 1.16 1.09 1.02 0.96 0.96 0.90 0.87 0.82 0.80 0.78 0.84 0.89 0.94 0.99 1.06 1.13 1.31 1.41 1.55 1.58 1.63 1.67 1.79 1.88 K Data Sheet P12710EJ2V0DS00 19 µPC2762TB, µPC2763TB, µPC2771TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C) − µPC2771TB − CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 50 No signal 40 50 No signal VCC = 3.0 V 40 Circuit Current ICC (mA) Circuit Current ICC (mA) 1 2 3 4 30 30 20 20 10 10 0 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Supply Voltage VCC (V) NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 24 22 24 Operating Ambient Temperature TA (°C) INSERTION POWER GAIN vs. FREQUENCY VCC = 2.7 V VCC = 3.0 V GP VCC = 3.3 V VCC = 3.3 V TA = +25 °C TA = –40 °C Insertion Power Gain GP (dB) 20 18 16 VCC = 3.0 V VCC = 2.7 V VCC = 3.0 V Insertion Power Gain GP (dB) 22 20 TA = +85 °C Noise Figure NF (dB) 7 6 5 4 3 14 12 10 8 6 0.1 0.3 18 VCC = 3.3 V NF 16 VCC = 3.0 V VCC = 2.7 V 1.0 3.0 14 0.1 0.3 1.0 3.0 Frequency f (GHz) ISOLATION vs. FREQUENCY Frequency f (GHz) INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 VCC = 3.0 V 0 VCC = 3.0 V RLout –10 –10 Input Return Loss RLin (dB) Outpur Return Loss RLout (dB) Isolation ISL (dB) –20 –20 RLin –30 –30 –40 0.1 –40 0.3 1.0 3.0 0.1 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) 20 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB − µPC2771TB − OUTPUT POWER vs. INPUT POWER +15 VCC = 3.3 V +15 OUTPUT POWER vs. INPUT POWER TA = +85 °C f = 0.9 GHz f = 0.9 GHz VCC = 3.0 V Output Power Pout (dBm) Output Power Pout (dBm) +10 +10 TA = –40 °C TA = +25 °C VCC = 2.7 V +5 VCC = 3.0 V +5 TA = +25 °C TA = –40 °C 0 0 TA = +85 °C –5 –5 –25 –20 –15 –10 –5 0 –25 –20 –15 –10 –5 0 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER +15 +15 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER f = 1.5 GHz +10 VCC = 3.3 V f = 1.5 GHz VCC = 3.0 V TA = +85 °C TA = +25 °C Output Power Pout (dBm) VCC = 2.7 V +5 Output Power Pout (dBm) +10 TA = –40 °C +5 VCC = 3.0 V 0 TA = +25 °C 0 TA = –40 °C –5 TA = +85 °C –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 –5 –10 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 OUTPUT POWER vs. INPUT POWER +15 OUTPUT POWER vs. INPUT POWER +15 f = 1.9 GHz VCC = 3.3 V +10 VCC = 3.0 V f = 1.9 GHz VCC = 3.0 V TA = +85 ˚C +10 Output Power Pout (dBm) Output Power Pout (dBm) +5 VCC = 2.7 V 0 TA = +25 ˚C +5 TA = –40 ˚C 0 –5 –5 –10 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 –10 –25 –20 –15 –10 –5 0 Input Power Pin (dBm) Data Sheet P12710EJ2V0DS00 21 µPC2762TB, µPC2763TB, µPC2771TB − µPC2771TB − SATURATED OUTPUT POWER vs. FREQUENCY +17 +17 SATURATED OUTPUT POWER vs. FREQUENCY Pin = –3 dBm Saturated Output Power PO (sat) (dBm) +15 VCC = 3.3 V +13 VCC = 3.0 V +11 VCC = 2.7 V +9 Saturated Output Power PO (sat) (dBm) Pin = –3 dBm TA= +25 °C +15 TA= +85 °C +13 +11 TA= –40 °C +9 +7 +5 0.1 0.3 1.0 3.0 Frequency f (GHz) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE +7 +5 0.1 0.3 1.0 3.0 Frequency f (GHz) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE Third Order Intermodulation Distortion IM3 (dBc) f1 = 0.900 GHz f2 = 0.902 GHz –50 VCC = 3.3 V –40 VCC = 2.7 V VCC = 3.0 V Third Order Intermodulation Distortion IM3 (dBc) –60 –60 f1 = 1.500 GHz f2 = 1.502 GHz –50 VCC = 3.3 V –40 VCC = 3.0 V –30 VCC = 2.7 V –30 –20 –20 –10 0 –15 –10 0 –15 +5 –10 0 –5 +10 Output Power of Each Tone PO (each) (dBm) +5 –10 –5 0 +10 Output Power of Each Tone PO (each) (dBm) 22 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB S-PARAMETER (TA = +25 °C, VCC = Vout = 3.0 V) − µPC2771TB − S11-FREQUENCY 0.1 G 3.0 G 2.0 G S22-FREQUENCY 3.0 G 0.1G 2.0 G Data Sheet P12710EJ2V0DS00 23 µPC2762TB, µPC2763TB, µPC2771TB TYPICAL S-PARAMETER VALUES (TA = +25 °C) µPC2771TB VCC = Vout = 3.0 V, ICC = 35 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 S11 MAG. 0.045 0.057 0.075 0.090 0.105 0.118 0.138 0.163 0.186 0.202 0.219 0.233 0.252 0.267 0.285 0.293 0.304 0.290 0.285 0.273 0.267 0.254 0.237 0.221 0.212 0.208 0.202 0.190 0.178 0.154 0.147 ANG. 19.7 37.0 41.3 43.3 42.2 40.2 34.9 32.5 29.4 26.3 21.7 15.4 8.4 −0.1 −6.8 −13.9 −20.9 −28.1 −35.3 −41.8 −47.4 −51.6 −57.1 −61.1 −68.8 −72.2 −74.1 −76.3 −76.7 −82.3 −88.0 MAG. 10.570 10.638 10.775 11.004 11.275 11.586 12.041 12.367 12.844 13.300 13.771 14.082 14.365 14.336 14.142 13.929 13.428 12.722 11.966 11.232 10.500 9.815 9.168 8.570 7.967 7.507 7.004 6.667 6.336 6.003 5.772 S21 ANG. −4.7 −9.5 −14.1 −19.4 −24.4 −30.0 −35.9 −42.1 −48.8 −56.6 −64.6 −73.5 −83.2 −92.6 −102.4 −112.0 −121.6 −131.0 −139.6 −147.5 −154.8 −161.7 −168.0 −173.7 −179.7 174.9 170.0 164.7 160.7 155.6 151.3 MAG. 0.028 0.028 0.029 0.030 0.030 0.031 0.031 0.032 0.032 0.032 0.033 0.033 0.036 0.036 0.036 0.037 0.039 0.038 0.038 0.038 0.039 0.040 0.041 0.041 0.042 0.043 0.045 0.047 0.051 0.051 0.054 S12 ANG. 0.8 5.0 8.6 11.1 14.9 15.8 19.8 20.1 23.2 23.9 24.9 26.6 28.8 30.0 32.0 31.6 32.5 34.7 36.1 37.4 39.1 41.4 43.7 48.3 48.3 50.8 53.7 54.2 57.7 56.5 59.3 MAG. 0.327 0.325 0.323 0.326 0.331 0.342 0.350 0.359 0.361 0.371 0.389 0.400 0.405 0.402 0.406 0.413 0.414 0.401 0.387 0.378 0.366 0.356 0.342 0.325 0.322 0.314 0.309 0.303 0.292 0.287 0.279 S22 ANG. −6.2 −11.5 −16.2 −20.9 −26.4 −32.0 −37.3 −42.8 −49.4 −56.1 −62.5 −69.3 −75.4 −83.6 −91.6 −99.3 −105.8 −113.7 −120.8 −127.6 −133.1 −138.0 −142.8 −148.3 −152.6 −156.7 −160.1 −164.0 −167.8 −172.8 −176.4 1.65 1.63 1.58 1.49 1.45 1.37 1.29 1.20 1.15 1.11 1.03 0.99 0.92 0.91 0.90 0.89 0.88 0.96 1.03 1.09 1.14 1.20 1.28 1.37 1.44 1.49 1.53 1.56 1.55 1.62 1.61 K 24 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.1 MIN. 0.2 +0.1 –0 0.15 +0.1 –0 1.25 ±0.1 2.1 ±0.1 0 to 0.1 0.65 1.3 0.65 0.7 0.9 ±0.1 2.0 ±0.2 Data Sheet P12710EJ2V0DS00 25 µPC2762TB, µPC2763TB, µPC2771TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit: None Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit: None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 26 Data Sheet P12710EJ2V0DS00 µPC2762TB, µPC2763TB, µPC2771TB [MEMO] Data Sheet P12710EJ2V0DS00 27 µPC2762TB, µPC2763TB, µPC2771TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8