3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER
FEATURES
• HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz
Gain, GS (dB)
UPC2771T
GAIN vs. FREQUENCY AND TEMPERATURE
24 TA = -40˚ C 22
• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
20
+85˚ C TA = +25˚ C TA = +85˚ C
18
16
DESCRIPTION
The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt supply, this IC is ideally suited for hand-held, portable designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
14
+25˚ C -40˚ C VCC = 3.0 V
0.1
0.3
1.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, VCC = 3.0 V)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS fU P1dB PSAT NF RLIN RLOUT ISOL OIP3 Small Signal Gain, PARAMETERS AND CONDITIONS Circuit Current (no signal) f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900, 902 MHz f = 1500, 1502 MHz UNITS mA dB dB GHz dBm dBm dBm dBm dB dB dB dB dB dB dB dB dBm dBm 10 10 6.5 5.5 25 25 19 17 1.7 +9 +7 MIN UPC2771T T06 TYP 36 21 20 2.1 +11.5 +9.5 +12.5 +11 6 6 14 14 9.5 8.5 30 30 +16 +13 MAX 45 24 23
Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 100 MHz) 1 dB Compressed Output Power, Saturated Output Power, Noise Figure, Input Return Loss, Output Return Loss, Isolation,
SSB OutputThird Order Intercept Point
7.5 7.5
California Eastern Laboratories
UPC2771T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCC ICC PIN PT TOP TSTG PARAMETERS Supply Voltage Total Supply Current Input Power Total Power Dissipation2 Operating Temperature Storage Temperature UNITS V mA dBm mW °C °C RATINGS 3.6 77.7 +13 280 -40 to +85 -55 to +150
6 50 Ω IN 1000 pF 1 4 1000 pF 50 Ω OUT L* 1000 pF
TEST CIRCUIT
VCC
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 X 50 X 1.6 mm epoxy glass PWB (TA = 85°C).
2, 3, 5
RECOMMENDED OPERATING CONDITIONS
SYMBOLS VCC TOP PARAMETERS Supply Voltage Operating Temperature UNITS MIN V °C 2.7 -40 TYP MAX 3 +25 3.3 +85
* This device is tested using a bias tee with typical series inductance, L = 1000 nH. In circuit applications, L = 50 nH is satisfactory at 900 MHz, and L = 10 nH is satisfactory at 1500 MHz.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
CIRCUIT CURRENT vs. VOLTAGE
50
50
CIRCUIT CURRENT vs. TEMPERATURE
Circuit Current, ICC (mA)
Circuit Current, ICC (mA)
40
40
30
30
20
20
10
10
0 0 1 2 3 4
0 -60 -40 -20 0 20 40 60 80 100
Supply Voltage, VCC (V)
Temperature (°C)
GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE
24 VCC = 2.7V 22 20 VCC = 3.3V GS VCC = 3.0V VCC = 3.3V
INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY
0 VCC = 3.0V RLout
Gain, GS (dB)
18
Noise Figure, NF (dB)
16 14 VCC = 3.3 V 12 10 NF 8 6 0.1 0.3
VCC = 2.7 V 7 VCC = 3.0 V
Return Loss (dB)
VCC = 3.0 V
-10
-20
RLin
-30
5 VCC = 2.7 V 3 1.0 3.0
-40 0.1 0.3 1.0 3.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2771T TYPICAL PERFORMANCE CURVES (TA = 25°)
ISOLATION vs. FREQUENCY
0 VCC = 3.0V
15 VCC = 3.3 V f = 900 MHz
OUTPUT POWER vs. INPUT POWER AND VOLTAGE
Output Power, POUT (dBm)
-10
10 VCC = 2.7 V VCC = 3.0 V 5
Isolation, ISOL (dB)
-20
-30
0
-40
-50 0.1 0.3 1.0 3.0
-5 -25 -20 -15 -10 -5 0
Frequency, f (GHz)
Input Power, PIN (dBm)
SATURATED OUTPUT POWER vs. FREQUENCY AND VOLTAGE Saturated Output Power, PO(SAT), (dBm)
Pin = -3 dBm 15 VCC = 3.3 V
SATURATED OUTPUT POWER vs. FREQUENCY AND TEMPERATURE Saturated Output Power, PO(SAT), (dBm)
17 Pin = -3 dBm 15 TA = +85˚C 13 TA = +25˚C 11
17
13 VCC = 3.0 V 11 VCC = 2.7 V
TA = -40˚C
9
9
7
7
5 0.1 0.3 1.0 3.0
5 0.1 0.3 1.0 3.0
Frequency, f (GHz)
Frequency, f (GHz)
S11 vs. FREQUENCY (VCC = 3.0 V)
S22 vs. FREQUENCY (VCC = 3.0 V)
0.9 GHz 1.5 GHz 1.9 GHz 0.1
1.9 GHz 0.1 GHz 0.9 GHz 1.5 GHz
UPC2771T OUTLINE DIMENSIONS
(Units in mm)
LEAD CONNECTIONS
(Top View) (Bottom View)
UPC2771T PACKAGE OUTLINE T06
+0.2 2.8 -0.3 +0.2 1.5 -0.1
3
4
4
3
2.9±0.2
3 0.95
4
C2H
2
5
5
2
1.9±0.2 2 0.95
5
1
1 6 -0.05 0.3 +0.10
6
6
1
+0.2 1.1 -0.1
0.8 0 to 0.1
0.13±0.1
1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC
RECOMMENDED P.C.B. LAYOUT (Units in mm) EQUIVALENT CIRCUIT
3.10
VCC
3 4 0.95
OUT
2
5
IN
1
6 0.5 MIN
1.0 MIN
1.0 MIN
Note: All dimensions are typical unless otherwise specified.
ORDERING INFORMATION
PART NUMBER UPC2771T-E3 Note: Embossed Tape, 8 mm wide. QTY 3K/Reel
EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC DATA SUBJECT TO CHANGE WITHOUT NOTICE
· Headquarters · 4590 Patrick Henry Drive ·
Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279 PRINTED IN USA ON RECYCLED PAPER 11/95
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