UPC2776TB-E3

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2776TB has compatible pin connections and performance to the µPC2776T of conventional minimold version. So, in the case of reducing your system size, the µPC2776TB is suitable to replace from the µPC2776T. These IC is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • High-density surface mounting: 6-pin super minimold package • Wideband response • Medium output power • Supply voltage • Power gain • Port impedance : fu = 2.7 GHzTYP. @ 3 dB bandwidth : Po (1 dB) = +6.5 dBm @ f = 1 GHz with external inductor : VCC = 4.5 to 5.5 V : GP = 23 dBTYP. @ f = 1 GHz : input/output 50 Ω APPLICATION • Systems required wideband operation from HF to 2.0 GHz ORDERING INFORMATION PART NUMBER PACKAGE 6-pin super minimold MARKING C2L SUPPLYING FORM Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape. Qty 3 kp/reel. µPC2776TB-E3 Remarks To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2776TB) Caution: Electro-static sensitive devices Document No. P12680EJ2V0DS00 (2nd edition) Date Published February 1998 N CP(K) Printed in Japan © 1997 µPC2776TB PIN CONNECTIONS Pin NO. (Top View) (Bottom View) Pin name INPUT GND GND OUTPUT GND VCC 1 C2L 3 4 4 3 2 3 2 5 5 2 4 5 6 1 6 6 1 PRODUCT LINE-UP OF µPC2776 (TA = +25 °C, VCC = Vout = 5.0 V, ZL = ZS = 50 Ω) fu (GHz) 2.7 PO (1dB) (dBm) +6.5 PO (sat) (dBm) +8.5 GP (dB) 23 NF (dB) 6 ICC (mA) 25 6-pin super minimold PART NO. PACKAGE 6-pin minimold MARKING µPC2776T µPC2776TB C2L Remarks Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Notice The package size distinguishes between minimold and super minimold. Selection point among product line-up µPC2709TB: Suits to 1 GHz 2.5 GHz operation due to small inductance (e.g. 10 nH) between VCC and output pin. µPC2776TB: Suits to HF to 2.0 GHz operation due to large inductance (e.g. 100 nH) between VCC and output pin. PIN FUNCTIONS APPLIED VOLTAGE (V) − PIN. 1 SYMBOL INPUT DESCRIPTION High-frequency signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. Ground pin. Form a ground pattern as wide as possible to maintain the minimum ground impedance. High-frequency signal output pin. Connect an inductor between this pin and VCC to supply current to the internal output transistors. Power supply pin, which biases the internal input transistor. Excellent RF characteristics are obtained by a two-stage amplifier circuit. 1 EQUIVALENT CIRCUIT 6 4 2 3 5 4 GND 0 OUTPUT 4.5 to 5.5 6 VCC 3 2 5 To know the associated products, please refer to each latest data sheet. 2 µPC2776TB ABSOLUTE MAXIMUM RATINGS PARAMETER Supply voltage Total circuit current Power dissipation SYMBOL VCC ICC PD TA = +25 °C TA = +25 °C Mounted on 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85 °C) CONDITION RATINGS 6 60 200 −40 to +85 −55 to +150 UNIT V mA mW Operating ambient temperature Storage temperature TA TSTG °C °C RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage SYMBOL VCC MIN. 4.5 −40 TYP. 5.0 MAX. 5.5 UNIT V NOTICE The same voltage should be applied to pin 4 and 6 pin. Operating Ambient Temperature TA +25 +85 °C ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) PARAMETER Circuit current Power gain Output 1 dB compression level Noise figure Upper limit operating frequency SYMBOL ICC GP PO (1dB) NF fu TEST CONDITION No signals f = 1 GHz f = 1 GHz f = 1 GHz 3 dB down below from gain at f = 100 MHz f = 1 GHz f = 1 GHz f = 1 GHz MIN. 18 21 +4.0 − 2.3 TYP. 25 23 +6.5 6.0 2.7 MAX. 33 26 − 7.5 − − − − UNIT mA dB dBm dB GHz Isolation Input return loss Output return loss ISL RLin RLout 27 4.5 15 32 7.5 20 dB dB dB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, VCC = Vout = 5.0 V, ZL = ZS = 50 Ω) PARAMETER Gain flatness Saturated output power 3rd order intermodulation distortion SYMBOL ∆GP PO(sat) IM3 TEST CONDITION f = 0.1 to 2.0 GHz f = 1 GHz PO(each) = + 0 dBm, f1 = 1000 MHz, f2 = 1002 MHz REFERENCE ±1 +8.5 −30 UNIT dB dBm dBc 3 µPC2776TB TEST CIRCUIT VCC 1 000 pF C3 L 6 50 Ω IN 1 000 pF C1 1 4 C2 1 000 pF 50 Ω OUT 2, 3, 5 Components of test circuit for measuring electrical characteristics TYPE C3 L C1 to C2 Capacitor Bias Tee Bias Tee VALUE 1 000 pF 1 000 nH 1 000 pF C1 to C3 L Example of actural application components TYPE Chip capacitor Chip inductor VALUE 1 000 pF 100 nH 10 nH OPERATING FREQUENCY 100 MHz or higher 100 MHz or higher 1.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2πRfc). 4 µPC2776TB Illustration of the application circuit assembled on evaluation board AMP-2 Top View 2 3 1 IN OUT C C L C Mounting direction 6 5 4 2L VCC C Component List Value C L 1 000 pF 100 nH, etc Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes 5 µPC2776TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 No Signals 35 35 CIRCUIT CURRENT vs. OPERATING TEMPERATURE 40 VCC = 5.0 V Circuit Current - ICC (mA) Circuit Current - ICC (mA) 0 1 4 3 2 Supply Voltage - VCC (V) 5 6 30 25 20 15 10 5 0 30 25 20 15 10 5 0 +20 +40 +60 +80 +100 –60 –40 –20 0 Operating Ambient Temperature - TA (°C) POWER GAIN vs. FREQUENCY 30 VCC = 5.0 V TA = +25 °C NOISE FIGURE, POWER GAIN vs. FREQUENCY 9 25 GP VCC = 5.5 V VCC = 5.0 V 25 VCC = 4.5 V Noise Figure - NF (dB) Power Gain - GP (dB) Power Gain - GP (dB) 8 20 TA = –40 °C 7 15 NF 10 VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V 20 TA = +85 °C 6 15 5 5 0.1 1.0 0.3 Frequency - f (GHz) ISOLATION vs. FREQUENCY 3.0 10 0.1 1.0 0.3 Frequency - f (GHz) 3.0 0 VCC = 5.0 V INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 VCC = 5.0 V RLin Input Return Loss - RLin (dB) Output Return Loss - RLout (dB) –10 –10 Isolation - ISL (dB) –20 –20 RLout –30 –30 –40 –40 –50 0.1 0.3 1.0 Frequency - f (GHz) 3.0 –50 0.1 0.3 1.0 Frequency - f (GHz) 3.0 6 µPC2776TB OUTPUT POWER vs. INPUT POWER +15 f = 1.0 GHz +10 VCC = 5.5 V Output Power - Pout (dBm) +5 0 –5 –10 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 Input Power - Pin (dBm) VCC = 5.0 V Output Power - Pout (dBm) +10 +5 0 –5 –10 –15 –20 0 –35 –30 –25 –20 –15 –10 –5 Input Power - Pin (dBm) TA = –40 °C +15 VCC = 5.0 V f = 1.0 GHz TA = +85 °C TA = +25 °C OUTPUT POWER vs. INPUT POWER VCC = 4.5 V +5 +10 +5 +10 OUTPUT POWER vs. INPUT POWER +15 f = 2.0 GHz +10 Output Power - Pout (dBm) VCC = 5.5 V +5 0 –5 VCC = 4.5 V –10 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 Input Power - Pin (dBm) VCC = 5.0 V Output Power - Pout (dBm) +10 +15 OUTPUT POWER vs. INPUT POWER VCC = 5.0 V f = 1.0 GHz +5 0 –5 –10 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 Input Power - Pin (dBm) f = 2.0 GHz +5 +10 +5 +10 SATURATED OUTPUT POWER vs. FREQUENCY 20 Saturated Output Power - PO (sat) (dBm) 18 16 14 VCC = 5.0 V 12 10 8 6 4 2 0 0.1 VCC = 4.5 V VCC = 5.5 V 3rd Order Intermodulation Distortion - IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 f1 = 1000 MHz f2 = 1002 MHz –50 VCC = 5.5 V –40 VCC = 5.0 V –30 VCC = 4.5 V –20 1.0 0.3 Frequency - f (GHz) 3.0 –10 –10 –8 –6 –4 –2 0 +2 +4 +6 +8 +10 Output Power of Each Tone - PO (each) (dBm) 7 µPC2776TB S-Parameter (VCC = Vout = 5.0 V) S11- FREQUENCY 0.1 G 1.0 G 3.0 G 2.0 G S22- FREQUENCY 3.0 G 1.0 G 0.1 G 2.0 G 8 µPC2776TB Typical S-Parameter Values (TA = +25 °C) µPC2776TB VCC = Vout = 5.0 V, ICC = 27 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 S11 MAG .226 .240 .254 .267 .285 .308 .345 .386 .425 .449 .466 .478 .507 .533 .564 .568 .576 .571 .570 .569 .564 .548 .535 .516 .515 .508 .503 .489 .471 .457 .455 ANG 2.8 6.4 10.4 11.4 11.1 8.5 6.1 3.9 1.4 –1.5 –6.1 –12.0 –17.7 –24.7 –30.3 –36.4 –42.0 –48.5 –54.5 –59.7 –64.2 –69.6 –75.5 –81.8 –87.0 –90.9 –94.8 –97.6 –101.3 –106.7 –111.3 MAG 13.844 13.862 13.942 14.123 14.267 14.423 14.670 14.864 15.210 15.455 15.564 15.550 15.622 15.577 15.527 15.285 14.960 14.570 14.026 13.715 13.283 12.926 12.515 12.093 11.498 11.136 10.511 10.126 9.850 9.242 9.065 S21 ANG –5.9 –12.5 –18.6 –25.2 –31.8 –38.6 –45.5 –52.8 –60.1 –68.4 –76.6 –84.9 –93.1 –101.3 –110.6 –119.0 –127.8 –136.4 –144.7 –151.7 –159.8 –167.5 –174.8 177.9 170.1 163.1 156.6 148.3 143.2 135.5 128.9 MAG .029 .029 .028 .029 .029 .029 .030 .030 .031 .030 .030 .030 .030 .029 .029 .027 .026 .024 .023 .022 .020 .018 .018 .016 .017 .015 .015 .018 .019 .022 .026 S12 ANG –1.5 0.3 3.2 4.8 7.2 9.3 10.7 11.0 11.9 11.8 10.6 11.7 13.4 13.2 13.5 11.3 12.6 14.8 15.8 18.2 23.5 27.1 36.3 41.9 53.3 64.3 67.9 85.0 93.7 100.0 108.0 MAG .032 .024 .030 .031 .037 .038 .040 .043 .055 .072 .084 .093 .094 .114 .130 .154 .167 .179 .194 .212 .228 .240 .251 .268 .279 .296 .306 .315 .330 .343 .357 S22 ANG –177.4 –171.9 –176.3 –167.6 –167.3 –159.3 –160.7 –161.9 –169.0 –169.1 –169.1 –173.6 177.9 167.0 164.1 158.0 152.6 143.0 135.2 128.1 121.6 115.9 108.1 102.4 96.0 90.8 86.7 79.2 73.0 67.0 60.7 1.39 1.39 1.40 1.36 1.33 1.28 1.22 1.18 1.12 1.10 1.08 1.07 1.05 1.05 1.02 1.07 1.09 1.18 1.27 1.35 1.48 1.66 1.75 2.01 1.99 2.22 2.29 2.00 1.96 1.81 1.53 K 9 µPC2776TB PACKAGE DIMENSIONS 6 pin super minimold (unit: mm) 0.2 +0.1 –0 0.15 +0.1 –0 0.1 MIN. 1.25±0.1 2.1±0.1 0 to 0.1 0.65 1.3 0.65 0.7 0.9±0.1 2.0±0.2 10 µPC2776TB NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor (e.g. 1 000 pF) should be attached to VCC pin. (4) The inductor must be attached between VCC and output pin (e.g. 100 nH) (5) The DC cut capacitor must be each attached to the input and output pins. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. µPC2776TB Soldering method Infrared ray reflow Soldering conditions Package peak temperature: 235 °C, Hour: within 30 s. Note (more than 210 °C), Time: 3 times, Limited days: no. Package peak temperature: 215 °C, Hour: within 40 s. Note (more than 200 °C), Time: 3 times, Limited days: no. Soldering tub temperature: less than 260 °C, Hour: within 10 s. Note Time: 1 time, Limited days: no. Pin area temperature: less than 300 °C, Hour: within 3 s/pin. Note Limited days: no. Recommended condition symbol IR35-00-3 VPS VP15-00-3 Wave soldering WS60-00-1 Pin part heating Note It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH. Caution The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 11 µPC2776TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.