UPC3226TB

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current • Medium output power • High linearity • Power gain • Noise Figure • Supply voltage • Port impedance : ICC = 15.5 mA TYP. @ VCC = 5.0 V : PO (sat) = +13.0 dBm TYP. @ f = 1.0 GHz : PO (sat) = +9.0 dBm TYP. @ f = 2.2 GHz : PO (1dB) = +7.5 dBm TYP. @ f = 1.0 GHz : PO (1dB) = +5.7 dBm TYP. @ f = 2.2 GHz : GP = 25.0 dB TYP. @ f = 1.0 GHz : GP = 26.0 dB TYP. @ f = 2.2 GHz : NF = 5.3 dB TYP. @ f = 1.0 GHz : NF = 4.9 dB TYP. @ f = 2.2 GHz : VCC = 4.5 to 5.5 V : input/output 50 Ω APPLICATIONS • IF amplifiers in LNB for DBS converters etc. ORDERING INFORMATION Part Number Order Number Package Marking C3N Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. µPC3226TB-E3 µPC3226TB-E3-A 6-pin super minimold (Pb-Free) Note Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3226TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10558EJ01V0DS (1st edition) Date Published May 2005 CP(K) Printed in Japan  NEC Compound Semiconductor Devices, Ltd. 2005 µPC3226TB PIN CONNECTIONS (Top View) 3 43 (Top View) 44 (Bottom View) 3 Pin No. 1 Pin Name INPUT GND GND OUTPUT GND VCC C3N 2 3 4 2 52 55 2 1 61 66 1 5 6 PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Part No. fu (GHz) 2.9 2.3 1.0 2.7 3.2 2.8 3.2 PO (sat) (dBm) +10.0 +11.5 +13.5 +8.5 +12.0 +15.5 Note GP (dB) 15 23 33 23 23 32.5 Note NF (dB) 6.5 5.0 3.5 6.0 4.5 3.7 Note ICC (mA) 26 25 22 25 19 24.5 15.5 Package 6-pin super minimold Marking C1D C1E C1F C2L C3J C3M C3N µPC2708TB µPC2709TB µPC2710TB µPC2776TB µPC3223TB µPC3225TB µPC3226TB +13.0 25 5.3 Note µPC3225TB is f = 0.95 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Data Sheet PU10558EJ01V0DS µPC3226TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Total Circuit Current Power Dissipation Operating Ambient Temperature Storage Temperature Input Power Symbol VCC ICC PD TA Tstg Pin TA = +25°C TA = +25°C TA = +25°C TA = +85°C Note Conditions Ratings 6.0 40 270 −40 to +85 −55 to +150 +10 Unit V mA mW °C °C dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Operating Ambient Temperature Symbol VCC TA Conditions MIN. 4.5 −40 TYP. 5.0 +25 MAX. 5.5 +85 Unit V °C Data Sheet PU10558EJ01V0DS 3 µPC3226TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Circuit Current Power Gain 1 Power Gain 2 Power Gain 3 Power Gain 4 Power Gain 5 Power Gain 6 Saturated Output Power 1 Saturated Output Power 2 Gain 1 dB Compression Output Power 1 Gain 1 dB Compression Output Power 2 Noise Figure 1 Noise Figure 2 Isolation 1 Isolation 2 Input Return Loss 1 Input Return Loss 2 Output Return Loss 1 Output Return Loss 2 Input 3rd Order Distortion Intercept Point 1 Symbol ICC GP1 GP2 GP3 GP4 GP5 GP6 PO (sat) 1 PO (sat) 2 PO (1 dB) 1 PO (1 dB) 2 NF1 NF2 ISL1 ISL2 RLin1 RLin2 RLout1 RLout2 IIP31 Test Conditions No input signal f = 0.1 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −30 dBm f = 1.8 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f = 2.6 GHz, Pin = −30 dBm f = 3.0 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −2 dBm f = 2.2 GHz, Pin = −8 dBm f = 1.0 GHz f = 2.2 GHz f = 1.0 GHz f = 2.2 GHz f = 1.0 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −30 dBm f = 2.2 GHz, Pin = −30 dBm f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −30 dBm Input 3rd Order Distortion Intercept Point 2 IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −30 dBm Output 3rd Order Distortion Intercept Point 1 OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −30 dBm Output 3rd Order Distortion Intercept Point 2 OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −30 dBm 2nd Order Intermodulation Distortion IM2 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −30 dBm K factor 1 K factor 2 K1 K2 f = 1.0 GHz f = 2.2 GHz − − 1.4 1.6 − − − − − 43.0 − dBc − +15.0 − − +20.0 − dBm − −11.0 − MIN. 12.5 22.0 23.0 23.0 23.0 22.5 22.0 +10.0 +6.0 +5.0 +3.0 − − 31 33 10.0 9.0 10.0 10.0 − TYP. 15.5 24.0 25.0 26.0 26.0 25.5 25.0 +13.0 +9.0 +7.5 +5.7 5.3 4.9 34 36 14.0 13.0 13.0 13.0 −5.0 MAX. 19.5 26.0 27.5 29.0 29.0 29.0 28.5 − − − − 6.0 6.0 − − − − − − − dBm dB dB dB dB dBm dBm Unit mA dB 4 Data Sheet PU10558EJ01V0DS µPC3226TB TEST CIRCUIT VCC C4 1 000 pF 1 000 pF C3 L 6 50 Ω IN C1 100 pF 1 4 C2 100 pF 50 Ω OUT 100 nH 2, 3, 5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 C3 C4 L Chip Capacitor Chip Capacitor Feed-through Capacitor Chip Inductor Value 100 pF 1 000 pF 1 000 pF 100 nH INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). Data Sheet PU10558EJ01V0DS 5 µPC3226TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN C1 C3 L C2 OUT C4 COMPONENT LIST Notes Value 1. C1, C2 C3, C4 L1 100 pF 1 000 pF 100 nH 30 × 30 × 0.4 mm double sided copper clad polyimide board. Back side: GND pattern Solder plated on pattern : Through holes 2. 3. 4. 6 Data Sheet PU10558EJ01V0DS µPC3226TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified) CURCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 18 17 TA = +85°C Circuit Current ICC (mA) 6 16 15 14 13 12 –50 CIRCUIT CURRENT vs. SUPPLY VOLTAGE 25 No Input Signal Circuit Current ICC (mA) 20 15 10 +25°C 5 –40°C 0 1 2 3 4 5 –25 0 25 50 75 100 Supply Voltage VCC (V) Operating Ambient Temperature TA (°C) POWER GAIN vs. FREQUENCY 30 VCC = 5.5 V 25 Power Gain GP (dB) Isolation ISL (dB) 20 4.5 V 5.0 V 15 10 5 0 0.1 –10 –20 0 ISOLATION vs. FREQUENCY VCC = 4.5 V –30 –40 –50 –60 0.1 5.0 V 5.5 V 0.3 0.5 1.0 2.0 3.0 0.3 0.5 1.0 2.0 3.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY 0 Input Return Loss RLin (dB) –5 –10 –15 –20 –25 –30 0.1 5.0 V 5.5 V 0.3 0.5 1.0 2.0 3.0 Output Return Loss RLout (dB) OUTPUT RETURN LOSS vs. FREQUENCY 0 –5 VCC = 4.5 V –10 –15 –20 –25 –30 0.1 5.0 V VCC = 4.5 V 5.5 V 0.3 0.5 1.0 2.0 3.0 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10558EJ01V0DS 7 µPC3226TB OUTPUT POWER vs. INPUT POWER +20 +15 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +20 +15 Output Power Pout (dBm) f = 1.0 GHz VCC = 5.5 V f = 2.2 GHz VCC = 5.5 V +10 +5 5.0 V 0 –5 –10 –15 –20 –40 –30 –20 –10 0 +10 +20 4.5 V +10 +5 0 –5 –10 –15 –20 –40 –30 –20 –10 0 +10 5.0 V 4.5 V Input Power Pin (dBm) Input Power Pin (dBm) NOISE FIGURE vs. FREQUENCY 8.0 7.5 Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 VCC = 4.5 V 5.0 V 7.0 6.5 6.0 5.5 5.0 4.5 4.0 TA = +85°C +25°C 5.5 V 500 1 000 1 500 2 000 2 500 3.5 3.0 0 500 1 000 1 500 –40°C 2 000 2 500 Frequency f (MHz) Frequency f (MHz) Remark The graphs indicate nominal characteristics. 8 Data Sheet PU10558EJ01V0DS µPC3226TB Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER +20 +10 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –40 –30 –20 –10 0 IM3 f1 = 1 000 MHz f2 = 1 001 MHz Pout OUTPUT POWER, IM3 vs. INPUT POWER +20 +10 0 –10 –20 –30 –40 –50 –60 –70 –40 –35 –30 –25 –20 –15 IM3 f1 = 2 200 MHz f2 = 2 201 MHz Pout Input Power Pin (dBm) Input Power Pin (dBm) Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm) +20 +10 0 –10 2nd Order Intermodulation Distortion IM2 (dBc) OUTPUT POWER, IM2 vs. INPUT POWER f1 = 1 000 MHz f2 = 1 001 MHz Pout IM2 vs. INPUT POWER 60 50 VCC = 5.5 V 40 30 20 10 0 –10 –40 –30 4.5 V 5.0 V IM2 –20 –30 –40 –50 –60 –70 –40 –30 –20 –10 0 –20 –10 0 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10558EJ01V0DS 9 µPC3226TB S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V, Pin = −30 dBm) S11−FREQUENCY START : 100.000 000 MHz STOP : 5 100.000 000 MHz 1 2 1 : 1 000 MHz 73.191 Ω − 12.578 Ω 2 : 2 200 MHz 61.383 Ω − 32.15 Ω S22−FREQUENCY START : 100.000 000 MHz STOP : 5 100.000 000 MHz 1 2 1 : 1 000 MHz 80.102 Ω − 13.164 Ω 2 : 2 200 MHz 56.375 Ω − 30.771 Ω 10 Data Sheet PU10558EJ01V0DS µPC3226TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 Data Sheet PU10558EJ01V0DS 11 µPC3226TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). 12 Data Sheet PU10558EJ01V0DS µPC3226TB When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PU10558EJ01V0DS 13 µPC3226TB For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504