UPC8119T_02

1.9 GHz AGC AMPLIFIER FEATURES • FREQUENCY RESPONSE: 800 MHz to 1.9 GHz • SUPPLY VOLTAGE RANGE: 2.7~3.3 V • VAGC: 0.6~2.3 V • TAPE AND REEL PACKAGING OPTION AVAILABLE • GAIN CONTROL RANGE UP TO 40 dB Gain, dB 20 UPC8119T UPC8119T GAIN vs. AGC VOLTAGE 10 • SUPER SMALL SURFACE MOUNT PACKAGE 0 -10 -20 DESCRIPTION The UPC8119T is a Silicon Monolithic Microwave Integrated Circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This device is suitable as an Automatic Gain Control Amplifier stage in cellular radios, GPS receivers, PCN, and test/measurement equipment. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. -30 0 1 2 3 VAGC Voltage, VAGC (V) ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3.0 V, ZS = ZL = 50 Ω) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GCR PARAMETERS AND CONDITIONS Circuit Current (no signal) Gain Control2f = 950 MHz, PIN = -30 dBm f = 1440 MHz, PIN = -30 dBm f = 1900 MHz, PIN = -30 dBm Maximum Power Gain, f = 950 MHz, PIN = -30 dBm f = 1440 MHz, PIN = -30 dBm f = 1900 MHz, PIN = -30 dBm Output Power at 1 dB compression, f = 950 MHz, GPMAX f = 1440 MHz, GPMAX f = 1900 MHz, GPMAX Noise Figure f = 950 MHz, GPMAX f = 1440 MHz, GPMAX f = 1900 MHz, GPMAX f = 950 MHz, GPMAX f = 1440 MHz,GPMAX UNITS mA dB dB dB dB dB dB dBm dBm dBm dB dB dB dB dB dB dB 3 3 27 31 MIN 7.5 40 35 10 10 0 +1 UPC8119T T06 TYP 11 50 45 22 12.5 13 12.5 +3 +4 +3 8.5 7.5 7.2 6 6 32 36 11.5 10.5 15 16 MAX 15 GPMAX P1dB NF RLIN ISOL Input Return Loss Isolation f = 950 MHz, GPMAX f = 1440 MHz, GPMAX California Eastern Laboratories UPC8119T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCC VAGC TOP TSTG PARAMETERS Supply Voltage Gain Control Voltage Operating Temperature Storage Temperature UNITS V V °C °C RATINGS 3.6 3.6 -40 to +85 -55 to +150 RECOMMENDED OPERATING CONDITIONS SYMBOLS VCC VAGC TOP PIN f IAGC PARAMETERS Supply Voltage Gain Control Voltage Operating Temperature Input Level Operating Frequency AGC Pin Drive Current UNITS MIN V V °C dBm MHz mA 2.7 0.6 -40 100 0.5 TYP MAX 3.0 25 3.3 2.4 +85 -181 1900 - Notes: 1. Operation in excess of any one of these conditions may result in permanent damage. Note: 1. Padj ≤ -60 dBc @ ∆f = ± 50 kHz. Wave form condition: π/4 QPSK modulation signal, data rate = 42 kbps, roll off ratio = 0.5, PN9 pattern. PIN FUNCTIONS Pin No. 1 Symbol IN Pin Voltage — Description RF input pin. Input RF signal with 50 Ω source impedance through a coupling capacitor. External matching circuit is not required. Ground pin. This pin must be connected to system ground. Form ground pattern as wide as possible to minimize ground impedance. Equivalent Circuit 5 4 2 3 GND 0 4 Out Same as VCC through external inductor RF output pin. The output is an open collector with high impedance. External matching circuit is required. 1 2 3 5 VCC 2.7~3.3 Supply voltage pin. This pin should be connected with a bypass capacitor (e.g., 1000 pF) to minimize ground impedance. 6 VAGC 0~3.3 Gain Control pin. The gain slope vs. increasing AGC voltage is summarized below: 5 6 Device UPC8119T Gain Slope vs. VAGC Down 2 3 UPC8119T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE T06 +0.2 2.8 -0.3 +0.2 1.5 -0.1 LEAD CONNECTIONS (Top View) (Bottom View) C2M 3 4 4 3 2 5 5 2 2.9±0.2 3 0.95 4 1 6 6 1 1.9±0.2 2 0.95 5 1 6 -0.05 0.3 +0.10 +0.2 1.1 -0.1 0.8 0.13±0.1 1. 2. 3. 4. 5. 6. IN GND GND OUT VCC VAGC Package Markings: UPC8119T - C2M 0 to 0.1 ORDERING INFORMATION PART NUMBER UPC8119T-E3 QUANTITY 3K/Reel Note: All dimensions are typical unless otherwise specified. TEST CIRCUIT 900 MHz 4 L1 5 L2 VCC 0.1µF VAGC 0.1µF C1 RFOUT 1900 MHz 4 L1 5 0.1µF 6 0.1µF VAGC VCC L2 RFOUT C1 6 FOUT 900 1900 L1 6.8nH 100nH L2 15nH 5nH (TRL) C1 1.5pF 2.2pF Unless Noted All Other Caps = 1000pF Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 01/17/2002