UPC8163TB

DATA SHEET µPC8106TB, µPC8109TB SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES BIPOLAR ANALOG INTEGRATED CIRCUITS DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz • Supply voltage • High-density surface mounting • Low current consumption • Minimized carrier leakage • Built-in power save function : VCC = 2.7 to 5.5 V : 6-pin super minimold package : ICC = 9 mA TYP. @ µPC8106TB ICC = 5 mA TYP. @ µPC8109TB : Due to double balanced mixer APPLICATION • Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on) ORDERING INFORMATION Part Number Markings C2D C2G Product Type High IP3 Low current consumption Package 6-pin super minimold Supplying Form Embossed tape 8 mm wide. Pin 1, 2, 3 face to tape perforation side. QTY 3 kp/Reel. µPC8106TB-E3 µPC8109TB-E3 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8106TB, µPC8109TB) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12770EJ2V0DS00 (2nd edition) Date Published April 1999 N CP(K) Printed in Japan © 1997, 1999 µPC8106TB, µPC8109TB PIN CONNECTIONS (Top view) (Bottom view) Pin No. 1 3 2 1 Pin Name IFinput GND LOinput PS VCC RFoutput 3 2 1 C2D 4 5 6 4 5 6 2 3 4 5 6 Marking is an example of µ PC8106TB. SERIES PRODUCTS (TA = +25 °C, VCC = VPS = VRFout = 3.0 V, ZL = ZS = 50 Ω) ICC (mA) 9 5 16.5 CG1 (dB) 9 6 9 CG2 (dB) 7 4 5.5 PO(sat)1 (dBm) −2 −5.5 0.5 PO(sat)2 (dBm) −4 −7.5 –2 OIP31 (dBm) +5.5 +1.5 +9.5 OIP32 (dBm) +2.0 −1.0 +6 TYPE High IP3 Low power consumption Higher IP3 PRODUCT NAME VCC (V) 2.7 to 5.5 2.7 to 5.5 2.7 to 3.3 µPC8106TB µPC8109TB µ PC8163TB Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTERISTICS for the test conditions. BLOCK DIAGRAM (FOR THE µPC8106TB AND µPC8109TB) (Top view) LO input GND IF input PS VCC RF output 2 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEMS) PHS, DECT DEMO. I Q RX VCO SW ÷N PLL PLL I 0° TX PA µ PC8106TB Phase shifter 90° Q Analog cellular telephone FM RX DEMO. VCO SW ÷N PLL PLL TX PA MOD. µPC8109TB Data Sheet P12770EJ2V0DS00 3 µPC8106TB, µPC8109TB PIN FUNCTIONS (FOR THE µPC8106TB AND µPC8109TB) Applied Voltage (V) − Pin Voltage Note (V) 1.3 Pin No. 1 Pin Name IFinput Function and Explanation Equivalent Circuit This pin is IF input to double balanced mixer (DBM). The input is designed as high impedance. The circuit contributes to suppress spurious signal. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. For above reason, double balanced mixer is adopted. GND pin. Ground pattern on the board should be formed as wide as possible. Track Length should be kept as short as possible to minimize ground impedance. Local input pin. Recommendable input level is −10 to 0 dBm. Supply voltage pin. This pin is RF output from DBM. This pin is designed as open collector. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. Power save control pin. Bias controls operation as follows. Pin bias VCC GND Control Operation Power Save 5 6 3 2 GND 0 − 1 3 LOinput − 2.4 − − 2 5 6 VCC 2.7 to 5.5 RFoutput Same bias as VCC through external inductor PS VCC/GND 4 − VCC 5 4 GND 2 Note Each pin voltage is measured with VCC = VPS = VRFout = 3.0 V. 4 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Votage PS pin Input Voltage Power Dissipation of Package Symbol VCC VPS PD Test Conditions TA = +25 °C, Pin 5 and 6 TA = +25 °C Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85 °C Rating 6.0 6.0 200 Unit V V mW Operating Ambient Temperature Storage Temperature Maximum Input Power TA Tstg Pin −40 to +85 −55 to +150 +10 °C °C dBm RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Symbol VCC MIN. 2.7 −40 −10 0.4 100 TYP. 3.0 MAX. 5.5 Unit V Note The same voltage should be supplied to pin 5 and 6 Operating Ambient Temperature Local Input Level RF Output Frequency IF Input Frequency TA PLOin fRFout fIFin +25 −5 − − +85 0 2.0 400 °C dBm GHz MHz ZS = 50 Ω (without matching) With external matching circuit ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise specified) µPC8106TB Parameter Circuit Current Circuit Current in Powersave Mode Conversion Gain 1 Conversion Gain 2 Maximum RF Output Power 1 Maximum RF Output Power 2 Symbol ICC ICC(PS) No signal VPS = 0 V fRFout = 0.9 GHz, PIFin = −30 dBm fRFout = 1.9 GHz, PIFin = −30 dBm fRFout = 0.9 GHz, PIFin = 0 dBm fRFout = 1.9 GHz, PIFin = 0 dBm Conditions MIN. 4.5 − TYP. 9 − MAX. 13.5 10 MIN. 2.5 − TYP. 5 − MAX. 8.0 10 mA µPC8109TB Unit µA dB dB dBm dBm CG1 CG2 PO(sat)1 PO(sat)2 6 4 −4 −6.5 9 7 −2 −4 12 10 − − 3 1 −7.5 −10 6 4 −5.5 −7.5 9 7 − − Data Sheet P12770EJ2V0DS00 5 µPC8106TB, µPC8109TB OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25 °C, VCC = VRFout = 3.0 V, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise mentioned) Reference Value Parameter Output Third-Order Distortion Intercept Point Third-Order Intermodulation Distortion 1 Third-Order Intermodulation Distortion 2 SSB Noise Figure Power Save Response Time Rise time Fall time Symbol OIP31 OIP32 IM31 Conditions fIFin1 = 240.0 MHz fIFin2 = 240.4 MHz fIFint = 240.0 MHz fIFin2 = 240.4 MHz PIFin = −20 dBm fRFout = 0.9 GHz fRFout = 1.9 GHz fRFout = 0.9 GHz µPC8106TB µPC8109TB +5.5 +2.0 −31 −30 +1.5 −1.0 −29 −28 Unit dBm dBc IM32 fRFout = 1.9 GHz dBc SSBNF TPS(rise) TPS(fall) fRFout = 0.9 GHz, fIFin = 240 MHz VPS: GND → VCC VPS: VCC → GND 8.5 2.0 2.0 8.5 2.0 2.0 dB µs µs APPLICATION CIRCUIT EXAMPLE CHARACTERSISTICS FOR REFERENCE PURPOSE ONLY (TA = +25 °C, VCC = VPS = VRFout = 3.0 V, fIFin = 130 MHz, fLOin = 1630 MHz, PLOin = −5 dBm) Reference Value Parameter Conversion Gain Symbol CG Conditions fRFout = 1.5 GHz, with application circuit example fRFout = 1.5 GHz, with application circuit example µPC8106TB 7 −3.5 Unit dB Maximum RF Output Power PO(sat) dBm 6 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB TEST CIRCUIT 1 (RF = 900 MHz, for the µPC8106TB and µPC8109TB) RF = 900 MHz, matched Spectrum Analyzer 50 Ω C4 10 000 pF VCC 1 000 pF 1 000 pF 1 pF C6 C5 L 6.8 nH 5 Signal Generator 6 RFoutput VCC PS IFinput GND LOinput 1 2 100 pF C1 Signal Generator 3 100 pF C2 PLoin = –5 dBm 50 Ω 50 Ω C3 * 4 * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD RFOUT RF Connector → 1 000 pF C6 C3 1 pF C5 6.8 nH 1 000 pF L IFIN 100 pF C1 1 1 000 pF P/S 100 pF µPC8106TB C2 LOIN C4 10 000 pF Data Sheet P12770EJ2V0DS00 7 µPC8106TB, µPC8109TB COMPONENT LIST Form Chip capacitor Symbol C1, C2 C3, C6 C5 Through capacitor Chip inductor C4 L Value 100 pF 1 000 pF 1 pF 10 000 pF 6.8 nH Note Note 6.8 nH: Murata Mfg. Co., Ltd. Notes on the board LQP31A6N8J04 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. : Through holes 5. C6 is for RF short on the board pattern 8 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB TEST CIRCUIT 2 (RF = 1.9 GHz, for the µPC8106TB and µPC8109TB) RF = 1.9 GHz, matched Spectrum Analyzer 50 Ω C4 10 000 pF VCC C3 1 000 pF 1 000 pF C6 Strip line 2.5 pF Signal Generator 6 L 100 nH 5 RFoutput VCC PS IFinput GND LOinput 1 2 100 pF C1 50 Ω C5 Signal Generator 3 100 pF C2 PLoin = –5 dBm 50 Ω * 4 * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD RFOUT RF Connector → C3 2 pF C6 1 000 pF C5 0.5 pF IFIN 100 pF C1 1 000 pF 100 nH 1 1 000 pF P/S 100 pF µPC8106TB C2 LOIN C4 10 000 pF Data Sheet P12770EJ2V0DS00 9 µPC8106TB, µPC8109TB COMPONENT LIST Form Chip capacitor Symbol C1, C2 C3, C6 C5 Through capacitor Chip inductor C4 L Value 100 pF 1 000 pF 2.5 pF (2.0 pF, 0.5 pF parallel) 10 000 pF 100 nH Note Note 100 nH: Murata Mfg. Co., Ltd. Notes on the board LQN1AR10J(K)04 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. : Through holes 10 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB APPLICATION CIRCUIT EXAMPLE (RF = 1.5 GHz, for the µPC8106TB and µPC8109TB) RF = 1.5 GHz, matched Spectrum Analyzer 50 Ω C4 10 000 pF VCC C3 1 000 pF 6 pF C6 2.7 nH L2 3.5 pF Signal Generator 6 RFoutput VCC PS IFinput GND LOinput 1 2 100 pF C1 Signal Generator 3 100 pF C2 PLoin = –5 dBm 50 Ω 50 Ω L1 150 nH 5 C5 * 4 * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD RFOUT RF Connector → C3 3 pF C6 6 pF C5 L2 0.5 pF 2.7 nH IFIN 100 pF C1 1 000 pF 150 nH L1 1 1 000 pF P/S 100 pF µPC8106TB C2 LOIN C4 10 000 pF Data Sheet P12770EJ2V0DS00 11 µPC8106TB, µPC8109TB COMPONENT LIST Form Chip capacitor Symbol C1, C2 C3 C5 C6 Through capacitor Chip inductor C4 L1 L2 Value 100 pF 1 000 pF 3.5 pF (3.0 pF, 0.5 pF parallel) 6 pF 10 000 pF 150 nH 2.7 nH Note 1 Note 2 Notes 1. 150 nH: TOKO Co., Ltd. 2. 2.7 nH : TOKO Co., Ltd. Notes on the board LL2012-FR15 LL2012-F2N7S 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. NOTICE The test circuits and board pattern on data sheet are for performance evaluation use only. desired frequency in accordance to actual mounting pattern. For external circuits of the ICs, following Application Note is also available. • µPC8106, µPC8109 Application Note (Document No. P13683E) (They are not recommended circuits.) In the case of actual design-in, matching circuit should be determined using S parameter of : Through holes 12 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = VRFout) with TEST CIRCUIT 1 or 2, according to the operating frequency, unless otherwise specified CIRCUIT CURRENT vs. SUPPLY VOLTAGE ( µ PC8106TB) 14 12 Circuit Current ICC (mA) 10 8 6 4 2 0 0 1 2 3 4 5 No signal VCC = VPS 6 7 8 Circuit Current ICC (mA) 8 10 CIRCUIT CURRENT vs. SUPPLY VOLTAGE ( µ PC8109TB) 6 4 2 No signal VCC = VPS 0 0 1 2 3 4 5 6 7 8 Supply Voltage VCC (V) CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE ( µ PC8106TB) 12 VCC = 5.5 V 10 Circuit Current ICC (mA) 8 6 4 2 0 0 VCC = 3.0 V Circuit Current ICC (mA) 8 10 Supply Voltage VCC (V) CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE ( µ PC8109TB) VCC = 5.5 V 6 4 VCC = 3.0 V 2 0 0 1 2 3 4 5 6 1 2 3 4 5 6 PS Pin Input Voltage VPS (V) PS Pin Input Voltage VPS (V) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE ( µ PC8106TB) 16 14 Circuit Current ICC (mA) 12 10 8 6 4 2 0 –60 –40 –20 0 20 VCC = VPS = 3.0 V No signal 40 60 80 100 Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE ( µ PC8109TB) 10 8 6 4 2 VCC = VPS = 3.0 V 0 –60 –40 –20 No signal 0 20 40 60 80 100 Operating Ambient Temperature TA (˚C) Operating Ambient Temperature TA (˚C) Data Sheet P12770EJ2V0DS00 13 µPC8106TB, µPC8109TB S-PARAMETERS FOR EACH PORT (VCC = VPS = VRFout = 3.0 V) – µPC8106TB, µPC8109TB in common – (THE parameters are monitored at DUT pins.) LO port S11 Z REF 1.0 Units 2 200.0 mUnits/ 21.201 Ω –53.748 Ω hp RF port S22 Z REF 1.0 Units 2 200.0 mUnits/ 26.961 Ω –87.312 Ω hp MARKER 1 1.15 GHz MARKER 2 1.65 GHz MARKER 1 900 MHz MARKER 2 1.9 GHz 2 1 2 1 START 0.4 GHz STOP 1.9 GHz START 0.4 GHz STOP 1.9 GHz IF port MARKER 1 240 MHz S11 Z REF 1.0 Units 1 200.0 mUnits/ 194.16 Ω –579.53 Ω hp 1 START 0.1 GHz STOP 0.4 GHz 14 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) – with TEST CIRCUITS 1 and 2 (µPC8106TB, µPC8109TB in common) – (S22 data are monitored at RF connector on board.) 900 MHz (LC-matched) in test circuit 1 log MAG S22 REF 0.0 dB 1 10.0 dB/ –19.567 dB hp 1.9 GHz (matched) in test circuit 2 log MAG S22 REF 0.0 dB 1 10.0 dB/ –15.213 dB hp MARKER 1 900 MHz MARKER 1 1.9 GHz 1 1 1 START 100 MHz STOP 3 000 MHz START 100 MHz STOP 3 000 MHz S22 REF 1.0 Units 1 200.0 mUnits/ 36.59 Ω 2.9355 Ω hp S22 REF 1.0 Units 1 200.0 mUnits/ 58.191 Ω –4.1191 Ω hp MARKER 1 900 MHz 1 1 MARKER 1 1.9 GHz START 100 MHz STOP 3 000 MHz START 100 MHz STOP 3 000 MHz Data Sheet P12770EJ2V0DS00 15 µPC8106TB, µPC8109TB S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) – with application circuit example – (S22 data are monitored at RF connector on board.) 1.5 GHz (matched) in application circuit example log MAG S22 REF 0.0 dB 1 10.0 dB/ –20.901 dB hp C D MARKER 1 1.5 GHz 1 START 1.0 GHz STOP 2.0 GHz S22 Z REF 1.0 Units 1 200.0 mUnits/ 59.086 Ω –3.873 Ω hp C D MARKER 1 1.5 GHz 1 START 1.0 GHz STOP 2.0 GHz 16 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB CONVERSION GAIN vs. SUPPLY VOLTAGE ( µ PC8106TB) 12 11 10 8 fRFout = 900 MHz 6 CONVERSION GAIN vs. SUPPLY VOLTAGE ( µ PC8109TB) Conversion Gain CG (dB) 10 fRFout = 900 MHz 9 8 7 6 5 VCC = VPS 4 2 3 4 5 6 fRFout = 1.9 GHz Conversion Gain CG (dB) 4 fRFout = 1.9 GHz 2 VCC = VPS 0 2 3 4 5 6 Supply Voltage VCC (V) Supply Voltage VCC (V) Conversion Gain CG (dB) 9 6 Conversion Gain CG (dB) CONVERSION GAIN vs. LOCAL INPUT LEVEL ( µ PC8106TB) 15 fRFout = 900 MHz fLOin = 1140 MHz 12 VCC = VPS = 3.0 V CONVERSION GAIN vs. LOCAL INPUT LEVEL (µ PC8109TB) 15 fRFout = 900 MHz fLOin = 1140 MHz 12 VCC = VPS = 3.0 V 9 6 3 3 0 –25 –20 –15 –10 –5 0 5 10 15 0 –25 –20 –15 –10 –5 0 5 10 15 Local Input Level PLOin (dBm) Local Input Level PLOin (dBm) Conversion Gain CG (dB) 5 0 Conversion Gain CG (dB) CONVERSION GAIN vs. LOCAL INPUT LEVEL ( µ PC8106TB) 15 fRFout = 1.9 GHz fLOin = 1.66 GHz 10 VCC = VPS = 3.0 V CONVERSION GAIN vs. LOCAL INPUT LEVEL ( µ PC8109TB) 15 fRFout = 1.9 GHz fLOin = 1.66 GHz 10 VCC = VPS = 3.0 V 5 0 –5 –5 –10 –25 –20 –15 –10 –5 0 5 10 15 –10 –25 –20 –15 –10 –5 0 5 10 15 Local Input Level PLOin (dBm) Local Input Level PLOin (dBm) Data Sheet P12770EJ2V0DS00 17 µPC8106TB, µPC8109TB RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8106TB) 10 0 –10 –20 Pout RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8109TB) 10 0 –10 Pout –20 –30 –40 –50 –60 –70 –80 –40 –30 –20 IM3 fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 0 10 –30 –40 –50 –60 –70 –80 –40 –30 –20 IM3 fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 0 10 IF Input Level PIFin (dBm) IF Input Level PIFin (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) 0 –10 –20 Pout RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8106TB) 10 RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8109TB) 10 0 –10 Pout –20 –30 –40 –50 –60 –70 –80 –40 –30 –20 IM3 fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 0 10 –30 –40 –50 –60 –70 –80 –40 –30 –20 IM3 fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 0 10 IF Input Level PIFin (dBm) IF Input Level PIFin (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8106TB) 10 0 –10 –20 Pout RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8109TB) 10 0 –10 –20 Pout –30 –40 –50 –60 –70 –80 –40 –30 –20 IM3 fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 0 10 –30 –40 –50 –60 –70 –80 –40 –30 –20 IM3 fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 0 10 IF Input Level PIFin (dBm) IF Input Level PIFin (dBm) 18 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY ( µ PC8106TB) 0 fRFout = 1.9 GHz PLOin = –5 dBm –10 VCC = VPS = 3.0 V –20 LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY ( µ PC8106TB) 0 fRFout = 1.9 GHz PLOin = –5 dBm –10 VCC = VPS = 3.0 V –20 –30 –30 Local Leakage at RF Pin LOrf (dBm) Local Leakage at IF Pin LOif (dBm) –40 –40 –50 0 0.5 1 1.5 2 2.5 3 3.5 –50 0 0.5 1 1.5 2 2.5 3 3.5 Local Input Frequency fLOin (GHZ) Local Input Frequency fLOin (GHZ) IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY ( µ PC8106TB) 0 fRFout = 1.9 GHz fLOin = 1.66 GHz PLOin = –5 dBm fIFin = –30 dBm VCC = VPS = 3.0 V IF Leakage at RF Pin IFrf (dBm) –10 –20 –30 –40 –50 0 100 200 300 400 500 600 IF Input Frequency fIFin (MHZ) Data Sheet P12770EJ2V0DS00 19 µPC8106TB, µPC8109TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.1 MIN. 0.2 +0.1 –0 0.15 +0.1 –0 1.25 ±0.1 2.1 ±0.1 0 to 0.1 0.65 1.3 0.65 0.7 0.9 ±0.1 2.0 ±0.2 20 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB NOTES ON CORRECT USE (1) (2) (3) (4) (5) Observe precutions for handling because of electrostatic sensitive devices. Form a ground pattern wide as possible to minimize ground impedance (to prevent undesired oscillation). Keep the wiring length of the ground pins as short as possible. Connect a bypass capacitor to the VCC pin. Connect a matching circuit to the RF output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Recommended Condition Symbol IR35-00-3 Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P12770EJ2V0DS00 21 µPC8106TB, µPC8109TB [MEMO] 22 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB [MEMO] Data Sheet P12770EJ2V0DS00 23 µPC8106TB, µPC8109TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8