UPC8178TB

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 V. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Low current consumption • Supply voltage • Excellent isolation : ICC = 1.9 mA TYP. @ VCC = 3.0 V : VCC = 2.4 to 3.3 V : ISL = 39 dB TYP. @ f = 1.0 GHz ISL = 40 dB TYP. @ f = 1.9 GHz ISL = 38 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.5 dB TYP. @ f = 1.9 GHz GP = 11.5 dB TYP. @ f = 2.4 GHz • Gain 1 dB compression output power : PO (1 dB) = −4.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = −7.0 dBm TYP. @ f = 1.9 GHz PO (1 dB) = −7.5 dBm TYP. @ f = 2.4 GHz • Operating frequency • High-density surface mounting • Low weight : 0.1 to 2.4 GHz (Output port LC matching) : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) : 7 mg (Standard value) APPLICATION • Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14895EJ2V0DS00 (2nd edition) Date Published November 2000 N CP(K) Printed in Japan The mark shows major revised points. © 2000 µPC8178TB ORDERING INFORMATION Part Number Package 6-pin super minimold Marking C3B Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. µPC8178TB-E3 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8178TB) PIN CONNECTIONS (Top View) 3 2 1 (Bottom View) 4 5 6 4 5 6 3 2 1 Pin No. 1 2 3 4 5 6 Pin Name INPUT GND GND OUTPUT GND VCC 2 C3B Data Sheet P14895EJ2V0DS00 µPC8178TB PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω) Parameter 1.0 GHz output port matching frequency ICC (mA) 1.9 4.0 2.8 4.2 5.6 GP (dB) 11 13.5 12.5 12.5 23 ISL (dB) 39 44 39 38 40 PO(1dB) (dBm) −4.0 +3.0 −4.0 +2.5 −4.5 1.66 GHz output port matching frequency GP (dB) − − 13 15 19.5 ISL (dB) − − 39 36 38 PO(1dB) (dBm) − − −4.0 +1.5 −8.5 1.9 GHz output port matching frequency GP (dB) 11.5 15.5 13 15 17.5 ISL (dB) 40 42 37 34 35 PO(1dB) (dBm) −7.0 +1.5 −4.0 +0.5 −8.5 2.4 GHz output port matching frequency GP (dB) 11.5 15.5 − − − ISL (dB) 38 41 − − − PO(1dB) (dBm) −7.5 +1.0 − − − C3B C3C C2P C2U C2V Marking Part No. µPC8178TB µPC8179TB µPC8128TB µPC8151TB µPC8152TB Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. SYSTEM APPLICATION EXAMPLE Location examples in digital cellular Low Noise Tr. RX DEMOD. I Q SW ÷N PLL PLL 0° TX PA I φ 90° Q These ICs can be added to your system around V parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation. Data Sheet P14895EJ2V0DS00 3 µPC8178TB PIN EXPLANATION Applied Voltage (V) − Pin Voltage Note (V) 0.91 Pin No. 1 Pin Name INPUT Function and Applications Internal Equivalent Circuit Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. 2 3 5 GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. 6 4 ↓ 4 OUTPUT voltage as same as VCC through external inductor − Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. 2 3 1 5 6 VCC 2.4 to 3.3 − Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet P14895EJ2V0DS00 µPC8178TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Circuit Current Power Dissipation Symbol VCC ICC PD Conditions TA = +25°C, Pin 4, Pin 6 TA = +25°C Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85°C) Ratings 3.6 15 270 −40 to +85 −55 to +150 TA = +25°C +5 Unit V mA mW Operating Ambient Temperature Storage Temperature Input Power TA Tstg Pin °C °C dBm RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Symbol VCC MIN. 2.4 −40 TYP. 3.0 MAX. 3.3 Unit V Remarks The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA +25 +85 °C ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency) Parameter Circuit Current Power Gain Symbol ICC GP No signal f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm Conditions MIN. 1.4 9.0 9.0 9.0 34 35 33 −8.0 −11.0 −11.5 − − − 4 5 6.5 TYP. 1.9 11.0 11.5 11.5 39 40 38 −4.0 −7.0 −7.5 5.5 5.5 5.5 7 8 9.5 MAX. 2.4 13.0 13.5 13.5 − − − − − − 7.0 7.0 7.0 − − − Unit mA dB Isolation ISL dB Gain 1 dB Compression Output Power PO(1dB) dBm Noise Figure NF dB Input Return Loss RLin dB Data Sheet P14895EJ2V0DS00 5 µPC8178TB TEST CIRCUITS f = 1.0 GHz VCC C4 C5 Output port matching circuit 6 50 Ω IN C1 1 4 L1 C2 C3 50 Ω OUT 2, 3, 5 f = 1.9 GHz VCC C4 C5 C6 Output port matching circuit 6 50 Ω IN C1 1 4 L1 C2 C3 50 Ω OUT 2, 3, 5 f = 2.4 GHz VCC C3 C4 C5 Output port matching circuit 6 50 Ω IN C1 1 4 L2 L1 50 Ω OUT C2 2, 3, 5 6 Data Sheet P14895EJ2V0DS00 µPC8178TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD f = 1.0 GHz Top View OUT C3B IN Connector C1 Mounting direction COMPONENT LIST 1.0 GHz Output Port Matching C1, C3, C5 C2 C4 L1 1 000 pF 0.75 pF 10 pF 12 nH Data Sheet P14895EJ2V0DS00 AMP-4 C2 C5 C4 C3 Connector L1 7 µPC8178TB f = 1.9 GHz Top View OUT C3B IN Connector C1 C6 C4 C5 C2 C3 Mounting direction COMPONENT LIST 1.9 GHz Output Port Matching C1, C3, C5, C6 C2 C4 L1 1 000 pF 0.5 pF 10 pF 3.9 nH 8 Data Sheet P14895EJ2V0DS00 AMP-4 Connector L1 µPC8178TB f = 2.4 GHz Top View OUT C3B IN Connector C1 Mounting direction COMPONENT LIST 2.4 GHz Output Port Matching C1, C2, C4, C5 C3 L1 L2 1 000 pF 10 pF 1.8 nH 2.7 nH NOTES (∗1) 42 × 35 × 0.4 mm double sided copper clad polyimide board (∗2) Solder plated on pattern (∗3) Back side: GND pattern (∗4) : Through holes Data Sheet P14895EJ2V0DS00 AMP-4 L2 C2 C5 C3 C4 Connector L1 9 µPC8178TB TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 2.5 No signal Circuit Current ICC (mA) Circuit Current ICC (mA) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 2.5 No signal VCC = 3.0 V 2 2 1.5 1.5 1 1 0.5 0.5 0 0 1 2 3 4 0 –60 –40 –20 0 +20 +40 +60 +80 +100 Supply Voltage VCC (V) Operating Ambient Temperature TA (°C) 10 Data Sheet P14895EJ2V0DS00 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING S-PARAMETERS (monitored at connector on board) TA = +25°C , VCC = Vout = 3.0 V S11 1: 62.488 Ω –58.969 Ω 2.699 pF 1 000.000 000 MHz MARKER 1 1 GHz 1 START S22 100.000 000 MHz 1: 61.654 Ω –11.893 Ω STOP 3 100.000 000 MHz 13.383 pF 1 000.000 000 MHz 1 START 00.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14895EJ2V0DS00 11 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY +20 VCC = 3.3 V +10 Power Gain GP (dB) POWER GAIN vs. FREQUENCY +20 +10 Power Gain GP (dB) VCC = 3.0 V TA = +25°C TA = –40°C VCC = 3.0 V 0 –10 –20 –30 –40 0.1 VCC = 2.4 V 0 –10 –20 –30 –40 0.1 TA = +85°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY –10 –20 Isolation ISL (dB) ISOLATION vs. FREQUENCY –10 –20 Isolation ISL (dB) VCC = 3.0 V –30 –40 VCC = 3.0 V –50 VCC = 3.3 V –60 –70 0.1 VCC = 2.4 V –30 –40 –50 TA = +85°C –60 –70 0.1 TA = –40°C TA = +25°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY 0 Input Return Loss RLin (dB) INPUT RETURN LOSS vs. FREQUENCY 0 Input Return Loss RLin (dB) –5 –10 –15 –20 –25 –30 0.1 VCC = 3.3 V –5 –10 –15 –20 –25 –30 0.1 TA = –40°C VCC = 3.0 V VCC = 2.4 V TA = +25°C TA = +85°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) 12 Data Sheet P14895EJ2V0DS00 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY +5 Output Return Loss RLout (dB) OUTPUT RETURN LOSS vs. FREQUENCY +5 Output Return Loss RLout (dB) VCC = 3.0 V 0 –5 –10 VCC = 2.4 V –15 VCC = 3.0 V –20 –25 0.1 VCC = 3.3 V 0.3 1.0 3.0 0 –5 –10 TA = –40°C –15 TA = +25°C –20 –25 0.1 TA = +85°C 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +10 +5 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +10 +5 Output Power Pout (dBm) VCC = 3.0 V TA = –40°C 0 –5 –10 –15 –20 VCC = 2.4 V –25 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 VCC = 3.0 V VCC = 3.3 V 0 –5 –10 –15 –20 –25 TA = +25°C TA = +85°C –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) +20 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE VCC = 3.0 V +10 f1 = 1 000 MHz 0 f2 = 1 001 MHz –10 –20 –30 –40 –50 –60 –70 –80 –40 –35 –30 –25 –20 –15 –10 –5 0 IM3 PO(each) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 –50 –40 –30 VCC = 2.4 V –20 –10 0 –25 f1 = 1 000 MHz f2 = 1 001 MHz VCC = 3.3 V VCC = 3.0 V –20 –15 –10 –5 0 Input Power of Each Tone Pin(each) (dBm) Output Power of Each Tone PO(each) (dBm) Data Sheet P14895EJ2V0DS00 13 µPC8178TB 1.0 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 7 6.5 Noise Figure NF (dB) TA = +85°C TA = +25°C 6 5.5 5 TA = –40°C 4.5 4 2 2.5 3 3.5 Supply Voltage VCC (V) 14 Data Sheet P14895EJ2V0DS00 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING S-PARAMETERS (monitored at connector on board) TA = +25°C , VCC = Vout = 3.0 V S11 1: 38.854 Ω –45.852 Ω 1.8269 pF 1 900.000 000 MHz MARKER 1 1.9 GHz 1 START S22 100.000 000 MHz 1: 37.332 Ω 0.8965 Ω STOP 3 100.000 000 MHz 75.095 pH 1 900.000 000 MHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14895EJ2V0DS00 15 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY +20 VCC = 3.3 V +10 Power Gain GP (dB) POWER GAIN vs. FREQUENCY +20 +10 Power Gain GP (dB) VCC = 3.0 V TA = –40°C TA = +25°C VCC = 3.0 V 0 VCC = 2.4 V –10 –20 –30 –40 0.1 0 –10 –20 –30 –40 0.1 TA = +85°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY –10 –20 Isolation ISL (dB) ISOLATION vs. FREQUENCY –10 –20 Isolation ISL (dB) VCC = 3.0 V –30 VCC = 3.3 V –40 VCC = 3.0 V –50 VCC = 2.4 V –60 –70 0.1 –30 TA = –40°C –40 TA = +25°C –50 TA = +85°C –60 –70 0.1 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY 0 Input Return Loss RLin (dB) INPUT RETURN LOSS vs. FREQUENCY 0 Input Return Loss RLin (dB) –5 VCC = 3.0 V –10 VCC = 2.4 V –5 –10 –15 –20 –25 –30 0.1 TA = +25°C VCC = 3.0 V TA = –40°C VCC = 3.3 V –15 –20 –25 –30 0.1 TA = +85°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) 16 Data Sheet P14895EJ2V0DS00 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY +5 OUTPUT RETURN LOSS vs. FREQUENCY +5 VCC = 3.0 V Output Return Loss RLout (dB) 0 –5 –10 –15 VCC = 3.3 V –20 –25 0.1 VCC = 2.4 V VCC = 3.0 V Output Return Loss RLin (dB) 0 –5 –10 –15 TA = –40°C –20 –25 0.1 TA = +85°C TA = +25°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +10 +5 +10 +5 OUTPUT POWER vs. INPUT POWER VCC = 3.0 V TA = –40°C Output Power Pout (dBm) 0 –5 –10 –15 –20 –25 Output Power Pout (dBm) VCC = 3.3 V 0 –5 –10 –15 –20 –25 VCC = 3.0 V TA = +25°C VCC = 2.4 V TA = +85°C –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) +20 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACHTONE f1 = 1 900 MHz +10 f2 = 1 901 MHz 0 VCC = 3.0 V –10 –20 –30 –40 –50 –60 –70 –80 –40 –35 –30 –25 –20 –15 –10 –5 0 PO(each) IM3 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 –50 –40 VCC = 3.0 V –30 –20 –10 0 –25 f1 = 1 900 MHz f2 = 1 901 MHz VCC = 3.3 V VCC = 2.4 V –20 –15 –10 –5 0 Input Power of Each Tone Pin(each) (dBm) Output Power of Each Tone PO(each) (dBm) Data Sheet P14895EJ2V0DS00 17 µPC8178TB 1.9 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 TA = +85°C Noise Figure NF (dB) 6 5.5 TA = +25°C 5 4.5 TA = –40°C 4 2 2.5 3 3.5 Supply Voltage VCC (V) 18 Data Sheet P14895EJ2V0DS00 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING S-PARAMETERS (monitored at connector on board) TA = +25°C , VCC = Vout = 3.0 V S11 1: 31.873 Ω –33.441 Ω 1.983 pF 2 400.000 000 MHz MARKER 1 2.4 GHz 1 START S22 100.000 000 MHz 1: 41.125 Ω STOP 3 100.000 000 MHz 20.08 Ω 1.3316 nH 2 400.000 000 MHz 1 START 100.000 000 MHz STOP 3 100.000 000 MHz Data Sheet P14895EJ2V0DS00 19 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING POWER GAIN vs. FREQUENCY +20 VCC = 3.3 V +10 Power Gain GP (dB) POWER GAIN vs. FREQUENCY +20 +10 Power Gain GP (dB) VCC = 3.0 V TA = –40°C TA = +25°C VCC = 3.0 V 0 –10 –20 –30 –40 0.1 0 –10 –20 –30 –40 0.1 VCC = 2.4 V TA = +85°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY –10 –20 Isolation ISL (dB) ISOLATION vs. FREQUENCY –10 –20 Isolation ISL (dB) VCC = 3.0 V –30 –40 –50 –60 –70 0.1 VCC = 3.3 V –30 –40 –50 –60 –70 0.1 TA = –40°C VCC = 3.0 V VCC = 2.4 V TA = +25°C TA = +85°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY 0 VCC = 2.4 V Input Return Loss RLin (dB) INPUT RETURN LOSS vs. FREQUENCY 0 TA = –40°C Input Return Loss RLin (dB) VCC = 3.0 V –5 VCC = 3.0 V –10 VCC = 3.3 V –15 –20 –25 –30 0.1 –5 –10 –15 –20 –25 –30 0.1 TA = +25°C TA = +85°C 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) 20 Data Sheet P14895EJ2V0DS00 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY +5 Output Return Loss RLout (dB) OUTPUT RETURN LOSS vs. FREQUENCY +5 Output Return Loss RLout (dB) VCC = 3.0 V 0 –5 –10 –15 –20 –25 0.1 0 –5 –10 –15 –20 –25 0.1 TA = –40°C TA = +25°C TA = +85°C VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V 0.3 1.0 3.0 0.3 1.0 3.0 Frequency f (GHz) Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +10 +5 Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER +10 +5 VCC = 3.0 V TA = +85°C 0 –5 –10 –15 –20 –25 VCC = 3.0 V VCC = 3.3 V Output Power Pout (dBm) 0 –5 –10 –15 –20 –25 TA = +25°C VCC = 2.4 V TA = –40°C –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 –30 –40 –35 –30 –25 –20 –15 –10 –5 Input Power Pin (dBm) 0 +5 Output Power of Each Tone PO(each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) +10 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER OF EACH TONE, IM3 vs. INPUT POWER OF EACH TONE f1 = 2 400 MHz 0 f2 = 2 401 MHz 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –60 –50 –40 VCC = 3.0 V –30 –20 –10 0 –25 VCC = 2.4 V f1 = 2 400 MHz f2 = 2 401 MHz VCC = 3.3 V –10 –20 –30 –40 –50 –60 –70 –80 –40 –35 –30 –25 –20 –15 –10 –5 0 IM3 PO(each) –20 –15 –10 –5 0 Input Power of Each Tone Pin(each) (dBm) Output Powr of Each Tone PO(each) (dBm) Data Sheet P14895EJ2V0DS00 21 µPC8178TB 2.4 GHz OUTPUT PORT MATCHING NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 TA = +85°C Noise Figure NF (dB) 6 TA = +25°C 5.5 5 TA = –40°C 4.5 4 2 2.5 3 3.5 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 22 Data Sheet P14895EJ2V0DS00 µPC8178TB S-PARAMETERS (VCC = Vout = 3.0 V) S11-FREQUENCY 3.0 G 1.0 G 2.0 G 0.1 G S22-FREQUENCY 0.1 G 1.0 G 2.0 G 3.0 G Data Sheet P14895EJ2V0DS00 23 µPC8178TB TYPICAL S-PARAMETER VALUES (TA = +25°C) VCC = Vout = 3.0 V, ICC = 1.9 mA FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 2100.0000 2200.0000 2300.0000 2400.0000 2500.0000 2600.0000 2700.0000 2800.0000 2900.0000 3000.0000 3100.0000 MAG. 0.821 0.692 0.598 0.540 0.501 0.484 0.477 0.474 0.469 0.466 0.453 0.447 0.442 0.439 0.439 0.439 0.433 0.427 0.416 0.405 0.399 0.395 0.398 0.396 0.394 0.382 0.368 0.360 0.359 0.357 0.355 S11 ANG. −16.9 −26.0 −30.2 −31.6 −33.1 −34.0 −35.5 −37.4 −40.4 −42.8 −45.2 −48.2 −51.3 −55.1 −59.0 −62.6 −66.0 −69.8 −73.1 −77.4 −82.2 −86.5 −89.4 −92.5 −95.2 −97.5 −101.1 −104.8 −108.7 −111.2 −113.7 MAG. 1.060 1.042 1.085 1.164 1.259 1.365 1.516 1.601 1.700 1.791 1.867 1.929 2.030 2.067 2.109 2.118 2.089 2.082 2.034 2.025 1.967 1.992 1.999 2.019 1.963 2.013 1.948 1.934 1.986 1.951 2.049 S21 ANG. 180.0 −177.2 −174.3 −172.7 −172.3 −173.8 −176.1 −179.4 177.2 172.1 167.6 163.2 157.3 152.2 146.4 142.5 137.2 132.7 127.9 124.0 119.6 116.7 113.6 110.7 107.2 103.6 101.4 96.2 94.5 89.5 85.8 MAG. 0.002 0.004 0.004 0.004 0.006 0.004 0.005 0.006 0.006 0.006 0.006 0.005 0.005 0.006 0.004 0.006 0.005 0.006 0.005 0.006 0.005 0.004 0.005 0.003 0.004 0.005 0.005 0.007 0.005 0.008 0.009 S12 ANG. 83.1 57.2 56.5 40.1 36.8 27.3 41.3 47.2 41.9 39.8 30.9 27.1 37.0 40.6 52.5 32.5 44.7 52.4 48.6 42.4 57.6 62.3 70.7 105.5 88.3 110.9 107.6 124.4 100.5 128.9 113.3 MAG. 0.996 0.994 0.985 0.973 0.958 0.952 0.948 0.946 0.942 0.927 0.916 0.915 0.913 0.907 0.902 0.888 0.880 0.882 0.884 0.880 0.872 0.864 0.863 0.862 0.860 0.857 0.849 0.846 0.842 0.844 0.846 S12 ANG. −1.9 −3.9 −5.4 −6.9 −8.2 −9.7 −10.8 −11.9 −13.0 −14.4 −15.5 −16.8 −17.8 −19.0 −19.8 −21.1 −22.0 −23.0 −24.1 −25.0 −26.1 −27.2 −28.1 −29.2 −30.4 −31.2 −32.1 −33.2 −34.7 −35.4 −36.7 24 Data Sheet P14895EJ2V0DS00 µPC8178TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 0 to 0.1 0.15 +0.1 –0.05 0.2+0.1 –0.05 Data Sheet P14895EJ2V0DS00 25 µPC8178TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 26 Data Sheet P14895EJ2V0DS00 µPC8178TB [MEMO] Data Sheet P14895EJ2V0DS00 27 µPC8178TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES • The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4