UPD16803

DATA SHEET MOS INTEGRATED CIRCUIT µPD16803 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. In addition, the drive current can be adjusted by an external resistor in a power-saving mode. The µPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 Ω TYP. (VM = 5.0 V) RON2 = 2.0 Ω TYP. (VM = 12.0 V) • Low current consumption: IDD = 0.4 mA TYP. • Stop mode function that turns OFF all output transistors • Compact surface mount package: 20-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) C1H C2L VM1 1A PGND 2A VDD IN1 IN2 INC 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 C1L C2H VG 1B PGND 2B VM2 RX PS DGND Document No. S11452EJ2V0DS00 (2nd edition) Date Published July 1997 N Printed in Japan © 1997 µPD16803 ORDERING INFORMATION Part Number Package 20-pin plastic SOP (300 mil) µPD16803GS BLOCK DIAGRAM 0.01 µ F VDD C1L C1H C2L 0.01 µ F C2H VG 0.01 µ F OSC CIRCUIT CHARGE PUMP 2 × VDD + VM Note 1 VM VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT “H” BRIDGE 1 Note 2 1A 1B PGND VM2 Note 3 PS SWITCH CIRCUIT 50 kΩ 50 kΩ 50 kΩ IN1 IN2 INC DGND PGND CONTROL CIRCUIT LEVEL SHIFT 2A “H” BRIDGE 2 2B 50 kΩ Connected in diffusion layer Notes 1. 3 × VDD where VM ≤ VDD 2. The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump circuit is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current. In the power-saving mode, the motor cannot turn. 3. It is recommended to connect an external capacitor of 0.22 µF or more between VM and GND to stabilize the operation. 2 µPD16803 FUNCTION TABLE Excitation Direction – INC H H H H L IN1 H L L H × IN2 H H L L × H1 F R R F Stop H2 F F R R H2R H1F H2F F: Forward R: Reverse H1R For the excitation waveform timing chart, refer to APPLICATION EXAMPLE. FORWARD VM REVERSE VM STOP VM ON OFF OFF ON OFF OFF A B A B A B OFF ON ON OFF OFF OFF 3 µPD16803 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Supply voltage (motor block) Supply voltage (control block) Power consumption Symbol VM VDD Pd1 Pd2 Instantaneous H bridge driver current Input voltage Operating temperature range Operation junction temperature Storage temperature range ID (pulse) VIN TA TjMAX. Tstg Rating –0.5 to +15 –0.5 to +7 1.0Note 1 1.25Note 2 ± 1.0Note 2, 3 –0.5 to VDD + 0.5 0 to 60 150 –55 to +125 A V °C °C °C Unit V V W Notes 1. IC only 2. When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) 3. t ≤ 5 ms, Duty ≤ 40 % Pd – TA Characteristics 1.4 When mounted on printed circuid boad 1.2 Average power consumption Pd (W) IC only 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 100 Ambient temperature TA (˚C) 4 µPD16803 RECOMMENDED OPERATING CONDITIONS Parameter Supply voltage (motor block) Supply voltage (control block) RX pin connection resistance H bridge driver currentNote Charge pump capacitance Operating temperature Symbol VM VDD RX IDR C 1 t o C3 TA 5 0 MIN. 4.0 4.0 2 ± 380 20 60 TYP. 5.0 5.0 MAX. 13.2 6.0 Unit V V kΩ mA nF °C Note When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified) Parameter OFF VM pin current Symbol IM INC pin Conditions lowNote 1 VM = 6.0 V VDD = 6.0 V VM = 13.2 V VDD = 6.0 V VDD pin current IN1, IN2, INC pin high-level input current IN1, IN2, INC pin low-level input current PS pin high-level input current IIH2 IIL1 IDD IIH1 Note 2 TA = 25 °C, VIN = VDD 0 ≤ TA ≤ 60 °C, VIN = VDD TA = 25 °C, VIN = 0 V 0 ≤ TA ≤ 60 °C, VIN = 0 V TA = 25 °C, VIN = VDD 0 ≤ TA ≤ 60 °C, VIN = VDD PS pin low-level input current IIL2 TA = 25 °C, VIN = 0 V 0 ≤ TA ≤ 60 °C, VIN = 0 V IN1, IN2, INC pin input pull-up resistance PS pin input pull-down resistance RIND RINU T A = 2 5 °C 0 ≤ T A ≤ 6 0 °C T A = 2 5 °C 0 ≤ T A ≤ 6 0 °C Control pin high-level input voltage Control pin low-level input voltage H bridge circuit ON resistanceNote 3 RON relative accuracy VIH VIL RON1 RON2 VDD = 5 V, VM = 5 V VDD = 5 V, VM = 12 V Excitation direction , Note 4 35 25 35 25 3.0 –0.3 1.5 2.0 50 50 0.4 MIN. TYP. MAX. 1.0 1.0 1.0 1.0 2.0 –0.15 –0.2 0.15 0.2 –1.0 –2.0 65 75 65 75 VDD + 0.3 0.8 3.0 4.0 ±5 ± 10 2.5 ±5 ±5 0.3 2 5 5 ms V % % V V Ω kΩ kΩ mA mA Unit µA mA mA µA µA ∆RON Excitation direction , VX voltage in power-saving modeNote 5 VX relative accuracy in power-saving mode Charge pump circuit (VG) turn ON time H bridge circuit turn ON time H bridge circuit turn OFF time TONG TONH TOFFH VX VDD = VM = 5 V, RX = 50 kΩ Excitation direction , Note 4 ∆V X Excitation direction , VDD = 5 V, VM = 5 V C1 = C2 = C3 = 10 nF RM = 20 Ω µs µs Notes 1. When VDD < VM, a current (IM1) always flow from the VM1 pin to the charge pump circuit because a gate voltage (2 × VDD + VM) is generated. 2. When IN1 = IN2 = INC = “H”, PS = “L” 3. Sum of ON resistances of top and bottom transistors 4. For the excitation direction, refer to FUNCTION TABLE. 5. VX is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in Function Table. 5 µPD16803 CHARACTERISTIC CURVES RON vs. VDD (= VM) Characteristics 3 H bridge ON resistance RON (Ω) RON vs. VM Characteristics 8 RM = 60 Ω 7 H bridge ON resistance RON (Ω) RM = 20 Ω 2 6 5 4 3 2 1 0 10 11 12 Motor voltage VM (V) 13 14 VDD = 5.0 V VDD = 5.5 V VDD = 4.5 V 1 0 4.0 5.0 6.0 Supply voltage VDD (= VM) (V) RON vs. Tj Characteristics 3 H bridge ON resistance RON (Ω) VX vs. RX Characteristics 4.0 VDD = VM = 5.0 V RM = 20 Ω VX voltage in power-saving mode VX (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VDD = VM = 5 V RM = 20 Ω VX : Note 5 2 1 0 25 50 75 100 125 150 Operation junction temperature Tj (˚C) 0 VX vs. VDD (= VM) Characteristics VX voltage in power-saving mode VX (V) 20 40 60 80 100 120 140 160 3.0 RX pin connection resistance RX (kΩ) RX = 50 kΩ RM = 20 Ω 2.5 2.0 4.0 5.0 Supply voltage VDD (= VM) (V) 6.0 6 1. Connection with 1-chip FDD LSI µPC2100AGF APPLICATION CIRCUIT EXAMPLE µ PC2100AGF Stepping Motor Excitation Timing Chart Step input External circumference seek Direction PH11 PH21 Internal circumference seek 0.01 µF 0.01 µF 0.01 µF VDD C1L C1H C2L C2H VG OSC CIRCUIT CHARGE PUMP 2 × VDD + VM VM VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT “H” BRIDGE 1 0.22 µ F 1A 1B SPF0 PS 50 kΩ 50 kΩ 50 kΩ 50 kΩ SWITCH CIRCUIT PGND VM2 PH11 IN1 IN2 INC PH21 CONTROL CIRCUIT LEVEL SHIFT 2A “H” BRIDGE 2 µPD16803 2B STB0 DGND PGND µ PC2100AGF 7 Connected in diffusion layer 50 kΩ 50 kΩ 50 kΩ 50 kΩ 8 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 0.01 µF 0.01 µF 0.01 µF VDD C1L C1H C2L C2H VG OSC CIRCUIT CHARGE PUMP 2 × VDD + VM VM 2. Connection with 1-chip FDD LSI µPC2100AGF VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT “H” BRIDGE 1 0.22 µ F 1A 1B SPF0 PS SWITCH CIRCUIT PGND VM2 PH11 IN1 IN2 INC DGND PH21 CONTROL CIRCUIT LEVEL SHIFT 2A “H” BRIDGE 2 2B PGND µ PC2100AGF Connected in diffusion layer µPD16803 µPD16803 20 PIN PLASTIC SOP (300 mil) 20 11 detail of lead end 1 A 10 H G P I J F K E C D NOTE N M M B L ITEM MILLIMETERS A B C D E F G H I J K L M N P 13.00 MAX. 0.78 MAX. 1.27 (T.P.) 0.40 +0.10 –0.05 0.1±0.1 1.8 MAX. 1.55 7.7±0.3 5.6 1.1 0.20 +0.10 –0.05 0.6±0.2 0.12 0.10 ° 3 ° +7° –3 INCHES 0.512 MAX. 0.031 MAX. 0.050 (T.P.) 0.016 +0.004 –0.003 0.004±0.004 0.071 MAX. 0.061 0.303±0.012 0.220 0.043 0.008 +0.004 –0.002 0.024 +0.008 –0.009 0.005 0.004 ° 3 ° +7° –3 Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. P20GM-50-300B, C-4 9 µPD16803 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E). Symbol of Recommended Soldering IR30-00 Soldering Method Infrared reflow Soldering Conditions Peak package temperature: 230 °C, Time: 30 seconds MAX. (210 °C MIN.), Number of times: 1, Number of days: NoneNote Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), Number of times: 1, Number of days: NoneNote Solder bath temperature: 260 °C MAX., Time: 10 seconds MAX., Number of times: 1, Number of days: NoneNote Pin temperature: 300 °C MAX., Time: 10 seconds MAX., Number of days: NoneNote VPS VP15-00 Wave soldering WS60-00 Partial heating – Note The number of storage days at 25 °C, 65 % RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination (except partial heating). 10 µPD16803 [MEMO] 11 µPD16803 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. 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Anti-radioactive design is not implemented in this product. M4 96.5 2