UPD16805GS

DATA SHEET MOS INTEGRATED CIRCUIT µPD16805 MONOLITHIC H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16805 is a monolithic H bridge driver IC which uses low-ON resistance power MOS FETs in its driver stage. This driver has a forward, reverse, and brake functions and is ideal for the driver circuit of motors for camera that advance or rewind the film, and for auto focusing or zooming. This IC supports a drive current of up to 1.0 A (DC). FEATURES • High drive current IDR = 4.2 A MAX. at PW ≤ 200 ms (single pulse) IDR = 1.0 A (DC) • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) RON = 0.4 Ω TYP. at IDR = 1.0 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) C2L C1H C1L VM VDD IN1 IN2 1 2 3 4 5 6 7 8 16 C2H 15 VG 14 STBY 13 OUT2 12 PGND 11 OUT1 10 VM 9 DGND ORDERING INFORMATION Part Number Package 16-pin plastic SOP (300 mil) INC µPD16805GS BLOCK DIAGRAM C1 VDD C2 VG C3 C1 = C2 = C3: External capacitors (10 nF) STBY INC IN1 IN2 Contorol circuit Charge pump circuit VM OUT1 Contorol circuit 50 kΩ DGND PGND Level shift circuit D MOS FET H bridge circuit Load motor OUT2 The information in this document is subject to change without notice. Document No. G11032EJ3V0DS00 (3rd edition) Date Published July 1997 N Printed in Japan © 1997 µPD16805 ABSOLUTE MAXIMUM RATINGS Parameter Supply voltage Symbol VDD VM VG pin applied voltage Input voltage H bridge drive current VG VIN IDR1 IDR2 Power consumption Operating temperature range Operating junction temperature Storage temperature range PT TA TJ (MAX) Tstg DC PW ≤ 200 ms (single pulse) T A = 2 5 °C Conditions Rating –0.5 to +6.5/+8.0 –0.5 to +6.5/+8.0 15 –0.5 to VDD + 0.5 1.0 4.2 1.0 –30 to +60 150 –55 to +150 Note Note Unit V V V A A W °C °C °C Note VDD when the charge pump is used/VDD and VM when VG is supplied from an external source RECOMMENDED OPERATING CONDITIONS Ratings Parameter Supply voltage Symbol VDD Conditions MIN. During normal operation All input pins are low VM Charge pump capacitance VG pin applied voltage Note 1 Unit TYP. MAX. 6.0/7.5Note 2 V 3.0 2.5 0.5 10 11 14 60 7.5 V nF V °C C 1 t o C3 VG TA Ambient temperature Operating temperature –30 Notes 1. When a voltage is applied from an external source to the VG pin 2. When the charge pump is used/when VG is supplied from an external source 2 µPD16805 ELECTRICAL SPECIFICATIONS (Unless otherwise specified, TA = 25 °C, VDD = recommended operating condition, VM = 0.5 to 7.5 V) Ratings Parameter VDD pin current Symbol IDD1 Conditions MIN. VDD = 5 V, TA = recommended conditions Control pins at high level VDD = 5 V, TA = recommended conditions Control pins at low level Control pins at low level, TA = recommended conditions Control pins at low level IDR = 1.0 A, VDD = VM = 5 V TA = recommended condition TA = recommended condition VDD = VM = 5 V, TA = recommended conditions C1 = C2 = C3 = 10 nF IDR = 1.0 A 35 TA = recommended condition 25 50 0.5 VDD × 0.6 VDD × 0.2 1.0 10 5.0 65 75 0.4 TYP. 0.6 MAX. 2.0 mA Unit IDD2 0.3 10 µA VM pin current IM1 0.1 10 µA µA Ω V V ms IM2 H bridge ON resistanceNote RON VIH VIL tONG tONH tOFFH RIND 1.0 0.6 Control pin high-level input voltage Control pin low-level input voltage Charge pump circuit turn-ON time H bridge output circuit turn-ON time H bridge output circuit turn-OFF time Control pin input pull-down resistor µs µs kΩ kΩ Note Sum of ON resistances of top and bottom MOS FETs 3 µPD16805 FUNCTION TABLE Input Signal Function IN1 H L H L × × IN2 L H H L × × INC H H H H L × STB H H H H H L Forward mode Reverse mode Brake mode Stop mode Stop mode Standby mode Forward mode VM Reverse mode VM ON OFF OFF ON OUT1 OUT2 OUT1 OUT2 OFF ON ON OFF Brake mode VM Stop mode VM OFF OFF OFF OFF OUT1 OUT2 OUT1 OUT2 ON ON OFF OFF 4 APPLICATION CIRCUIT 1 VM = 0.5 V to 7.5 V DC-DC convertor VDD = 3.0 V to 6.0 V C1 = C2 = C3 = 10 = nF C1 C2 C3 Battery VDD 5 VM 2 3 16 1 15 10 4 OSC circuit Charge pump circuit VM C4 Note 1 to 10 µ F 11 OUT1 Control circuit Level shift circuit D MOS FET H bridge circuit 13 OUT2 Pull-down resistor 50 kΩ TYP. 9 DGND 12 PGND M Film take-up motor STBY 14 CPU INC IN1 IN2 8 6 7 H IN1 L H IN2 L Note It is recommended to connect a capacitor of 1 to 10 µF between VM and GND to protect the gate of the DMOS FET from surge voltage. µPD16805 Forward mode Brake mode Reverse mode Stop mode 5 6 VM = 0.5 V to 7.5 V VG = 11 V to 14 V DC-DC convertor VDD = 3.0 V to 7.5 V Battery VDD 5 VM 2 3 16 1 15 10 STBY 14 OSC circuit Charge pump circuit VM C4 Note 1 to 10 µ F 11 OUT1 Control circuit Level shift circuit D MOS FET H bridge circuit 13 OUT2 Pull-down resistor 50 kΩ TYP. 9 DGND 12 PGND M Film take-up motor CPU INC IN1 IN2 8 6 7 H IN1 L H IN2 L APPLICATION CIRCUIT 2 Note It is recommended to connect a capacitor of 1 to 10 µF between VM and GND to protect the gate of the DMOS FET from surge voltage. µPD16805 Forward mode Brake mode Reverse mode Stop mode µPD16805 TYPICAL CHARACTERISTICS (TA = 25 °C) PT vs. TA Characteristics 1.4 H bridge ON resistance RON (Ω) Total power dissipation PT (W) RON vs. TA Characteristics IDR = 1.0 A VDD = VM = 5 V 1.2 1.0 0.8 0.6 0.4 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0 – 50 – 25 0 10 20 30 40 50 60 70 80 0 25 50 75 100 Ambient temperature TA (˚C) Ambient temperature TA (˚C) VG vs. IG Characteristics VDD = 5 V H bridge ON resistance RON (Ω) VG vs. RON Characteristics VDD = 5 V 1.2 1.0 0.8 0.6 0.4 0.2 60 Gate current IG ( µ A) 50 40 30 20 10 0 5 10 15 20 0 5 10 15 20 Gate applied voltage VG (V) Gate applied voltage VG (V) 7 µPD16805 PACKAGE DIMENSION 16 PIN PLASTIC SOP (300 mil) 16 9 detail of lead end 1 A 8 H I J F G K E C D M N M B L NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A B C D E F G H I J K L M N P 10.46 MAX. 0.78 MAX. 1.27 (T.P.) 0.40 +0.10 –0.05 0.1±0.1 1.8 MAX. 1.55 7.7±0.3 5.6 1.1 0.20 +0.10 –0.05 0.6±0.2 0.12 0.10 ° 3 ° +7° –3 P INCHES 0.412 MAX. 0.031 MAX. 0.050 (T.P.) 0.016 +0.004 –0.003 0.004±0.004 0.071 MAX. 0.061 0.303±0.012 0.220 0.043 0.008 +0.004 –0.002 0.024 +0.008 –0.009 0.005 0.004 ° 3 ° +7° –3 P16GM-50-300B-4 8 µPD16805 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E). µPD16805GS Symbol of Recommended Soldering IR35-00-2 Soldering Method Soldering Conditions Peak package temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.), Number of times: 2 MAX. Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), Number of times: 2 MAX. Infrared reflow VPS VP15-00-2 Note The number of storage days at 25 °C, 65% RH after the dry pack has been opened 9 µPD16805 [MEMO] 10 µPD16805 [MEMO] 11 µPD16805 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2