UPD16833AG3

DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits using bipolar transistors. A low-voltage malfunction prevention function is provided to prevent the IC from malfunctioning when the supply voltage drops. By eliminating the charge pump circuit, the current during power-OFF is drastically decreased. As the package, a 30-pin plastic shrink SOP is employed to enable the creation of compact, slim application sets. This driver IC can drive two stepping motors at the same time, and is ideal for driving stepping motors in the lens of a video camera. FEATURES • Four H bridge circuits employing power MOS FETs • Low current consumption by eliminating charge pump VM pin current when power-OFF: 10 µA MAX. VDD pin current: 10 µA MAX. • Input logic frequency: 100 kHz • 3-V power supply Minimum operating supply voltage: 2.5 V • Low-voltage malfunctioning prevention circuit • 30-pin plastic shrink SOP (300 mil) (µPD16833AG3) ORDERING INFORMATION Part Number Package 30-pin plastic shrink SOP (300 mil) µPD16833AG3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Supply voltage Symbol VDD VM Input voltage H bridge drive currentNote 1 currentNote 1 VIN IDR (DC) IDR (pulse) PT TCH (MAX) Tstg DC PW ≤ 10 ms, Duty ≤ 5 % Conditions Rating –0.5 to +6.0 –0.5 to +6.0 –0.5 to VDD + 0.5 ±300 ±700 1.19 150 –55 to +150 Unit V V V mA mA W °C °C Instantaneous H bridge drive Power dissipationNote 2 Peak junction temperature Storage temperature range Notes 1. Permissible current per phase, when mounted on a printed circuit board 2. W hen mounted on a glass epoxy board (10 cm × 1 0 cm × 1 m m) The information in this document is subject to change without notice. Document No. S13147EJ1V0DS00 (1st edition) Date Published January 1998 N CP(K) Printed in Japan © 1998 µPD16833A Recommended Operating Conditions Parameter Supply voltage Symbol VDD VM H bridge drive current Logic input frequencyNote Operating temperature range Peak junction temperature IDR fIN TA TCH (MAX) –10 MIN. 2.5 2.7 –200 TYP. MAX. 5.5 5.5 200 100 85 125 Unit V V mA kHz °C °C Note Common to IN and EN pins DC Characteristics (Unless otherwise specified, VDD = VM = 3.0 V, TA = 25 °C) Parameter OFF VM pin current VDD pin current High-level input current Low-level input current Input pull-down resistor High-level input voltage Low-level input voltage H bridge ON resistanceNote Symbol IM (OFF) IDD IIH IIL RIND VIH VIL RON VDDS1 VDD = 2.5 V to 5.5 V VDD = 2.5 V to 5.5 V VDD = VM = 2.7 V to 5.5 V VM = 5.0 V –10 °C ≤ TA ≤ +85 °C VM = 3.0 V –10 °C ≤ TA ≤+85 °C 0.8 Conditions with all control pins at low level with all control pins at low level VIN =VDD VIN = 0 –1.0 50 VDD × 0.7 –0.3 200 VDD + 0.3 VDD × 0.3 3.0 2.5 MIN. TYP. MAX. 10 10 0.06 Unit µA µA mA µA kΩ V V Ω V Low-voltage malfunction prevention circuit operating voltage VDDS2 0.65 2.5 V Note Sum of top and bottom ON resistances (@IDR = 100 mA) AC Characteristics (Unless otherwise specified, VDD = VM = 3.0 V, TA = 25 °C) Parameter H bridge output circuit turn-ON time H bridge output circuit turn-OFF time Rise time Fall time tr tf 0.1 0.4 70 1.0 200 tOFFH 0.2 0.5 Symbol tONH Conditions RM = 20 Ω, Figure 1 MIN. TYP. 0.7 MAX. 20 Unit µA µA µs ns 2 µPD16833A FUNCTION TABLE Channel 1 EN1 H H L L L H L H IN1 H L Z Z OUT1A L H Z Z OUT1B H H L L Channel 2 EN2 L H L H IN2 H L Z Z OUT2A L H Z Z OUT2B Channel 3 EN3 H H L L L H L H IN3 H L Z Z OUT3A L H Z Z OUT3B Channel 4 EN4 H H L L L H L H IN4 H L Z Z OUT4A L H Z Z OUT4B H: High level, L: Low level, Z: High impedance IN PIN CONFIGURATION NC NC VDD VM1 1A PGND 2A 3A PGND 4A VM4 IN1 EN1 IN2 EN2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 NC NC DGND NC 1B PGND 2B VM2, 3 3B PGND 4B EN4 IN4 EN3 IN3 3 µPD16833A Figure 1. Switching Characteristic Wave 100 % 50 % 0% tON tOFF 100 % 90 % IDR 0% tf tOFF 100 % 90 % 50 % 10 % –10 % –50 % –90 % tr –100 % –50 % tr –90 % tf The current flowing in the direction from OUT_A to OUT_B is assumed to be (+). 50 % 10 % –10 % tON 50 % VIN 4 µPD16833A BLOCK DIAGRAM NC 1 NC 2 NC 27 NC 29 NC 30 VDD 3 Low-voltage malfunction prevention circuit 4 VM1 IN1 12 Control circuit H bridge 1 5 1A EN1 13 26 1B DGND 6 PGND 23 VM2, 3 IN2 14 Control circuit H bridge 2 7 2A EN2 15 24 2B DGND 25 PGND IN3 16 Control circuit H bridge 3 8 3A EN3 17 22 3B DGND 9 PGND 11 VM4 IN4 18 Control circuit H bridge 4 10 4A EN4 19 20 4B DGND 28 21 PGND 5 6 VDD = VM = 2.7 V to 5.5 V DC/DC Converter 1 to 10 µ F Battery 1 to 10 µ F VM4 VDD H bridge 1 Low-voltage malfunction prevention circuit PGND 2A H bridge 2 PGND Control circuit 3A Level shift circuit H bridge 3 PGND 4A H bridge 4 4B DGND PGND 3B Motor 2 2B VM2, 3 VM1 1A 1B Motor 1 IN1 EN1 IN2 EN2 CPU IN3 EN3 IN4 EN4 GND STANDARD CONNECTION EXAMPLE µPD16833A µPD16833A TYPICAL CHARACTERISTICS (TA = 25 °C) PT vs. TA characteristics 1.4 1.2 Total power dissipation PT (W) IM (OFF) vs. VM characteristics 20 1.19 W OFF VM pin current IM (OFF) ( µ A) All control pins at low level TA = 25 °C 1.0 0.8 0.6 0.4 0.2 0 –10 10 0 0 40 60 80 100 120 1 2 3 4 5 6 7 Ambient temperature TA (°C) Output block supply voltage VM (V) IIH/IIL vs. VIN characteristics 100 TA = 25 °C 80 Input voltage VIH/VIL (V) Input current IIH/IIL ( µ A) VIH/VIL vs. VDD characteristics TA = 25 °C 3 VIH VIL 2 60 IIH 40 20 IIL 1 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 Input voltage VIN (V) Control block supply voltage VDD (V) 7 µPD16833A RIND vs. VDD characteristics 200 TA = 25 °C Low voltage detection voltage VDDS (V) Input pull-down resistor RIND (kΩ) VDDS vs. VM characteristics 3 TA = 25 °C 150 2 100 1 50 0 1 2 3 4 5 6 7 Control block supply voltage VDD (V) 0 1 2 3 4 5 6 7 Output block supply voltage VM (V) RON vs. VM characteristics 3 TA = 25 °C IDR = 100 mA Output ON resistor RON (Ω) Output ON resistor RON (Ω) RON vs. TA characteristics 3 VM = 3.5 V IDR = 100 mA 2 2 1 1 0 1 2 3 4 5 6 7 Output block supply voltage VM (V) 0 –25 0 25 50 75 100 Ambient temperature TA (°C) 8 µPD16833A Switching time vs. VDD/VM characteristics 1000 RM = 20 Ω TA = 25 °C Switching time tON/tOFF/tr/tf (ns) Switching time tON/tOFF/tr/tf (ns) Switching time vs. TA characteristics 1000 VDD = VM = 3 V RM = 20 Ω 800 tON 600 tr 400 tOFF 200 tf 0 –25 800 600 tON 400 200 tOFF tr tf 0 1 2 3 4 5 6 7 Supply voltage VDD/VM (V) 0 25 50 75 100 Ambient temperature TA (°C) 9 µPD16833A PACKAGE DIMENSION 30 PIN PLASTIC SHRINK SOP (300 mil) 30 16 detail of lead end 1 A 15 H I J F G E K C D MM N B L P30GS-65-300B-1 ITEM A B C D E F G H I J K L M N MILLIMETERS 10.11 MAX. 0.51 MAX. 0.65 (T.P.) 0.30+0.10 –0.05 0.125 ± 0.075 2.0 MAX. 1.7 ± 0.1 8.1 ± 0.2 6.1 ± 0.2 1.0 ± 0.2 0.15+0.10 –0.05 0.5 ± 0.2 0.10 0.10 INCHES 0.398 MAX. 0.020 MAX. 0.026 (T.P.) 0.012 +0.004 –0.003 0.005 ± 0.003 0.079 MAX. 0.067 ± 0.004 0.319 ± 0.008 0.240 ± 0.008 0.039 +0.009 –0.008 0.006 +0.004 –0.002 0.020 +0.008 –0.009 0.004 0.004 NOTE Each lead centerline is located within 0.10 mm (0.004 inch) of its true position (T.P.) at maximum material condition. 10 3° +7° –3° µPD16833A RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. For the details of the recommended soldering conditions of this type, refer to the Semiconductor Device Mounting Technology Manual (C10535E). Symbol of Recommended Soldering IR35-00-3 Soldering Method Infrared reflow Soldering Conditions Peak package temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.), Number of times: 3 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), (200 °C MIN.), Number of times: 2 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. Soldering bath temperature: 260 °C MAX., Time: 10 seconds MAX., Preheating temperature: 120 °C MAX., Number of times: 1, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. VPS VP15-00-2 Wave soldering WS60-00-1 Note The number of storage days at 25 °C, 65% RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination. 11 µPD16833A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2