UPD4416008G5-A17-9JF

DATA SHEET MOS INTEGRATED CIRCUIT µPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The µPD4416008 is a high speed, low power, 16,777,216 bits (2,097,152 words by 8 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) Features • 2,097,152 words by 8 bits • Fast access time : 15, 17 ns (MAX.) • Output Enable input for easy application Ordering Information Part number Package Supply voltage V Access time ns (MAX.) 15 17 Supply current mA (MAX.) At operating 230 220 At standby 10 • • µPD4416008G5-A15-9JF µPD4416008G5-A17-9JF 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) 3.3 ± 0.3 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M14080EJ4V0DS00 (4th edition) Date Published December 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1999 µPD4416008 Pin Configuration (Marking Side) /xxx indicates active low signal. 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) [µPD4416008G5−xxx−9JF] NC VCC NC I/O 7 GND I/O 8 A0 A1 A2 A3 A4 NC /CS VCC /WE NC A5 A6 A7 A8 A9 I/O 1 VCC I/O 2 NC GND NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 NC GND NC I/O 6 VCC I/O 5 A20 A19 A18 A17 A16 NC /OE GND IC A15 A14 A13 A12 A11 A10 I/O 4 GND I/O 3 NC VCC NC A0 - A20 : Address Inputs I/O1 - I/O8 : Data Inputs / Outputs /CS /WE /OE VCC GND NC IC : Chip Select : Write Enable : Output Enable : Power supply : Ground : No connection : Internal connection Note Note Leave this pin connect to GND. Remark Refer to Package Drawing for 1-pin index mark. 2 Data Sheet M14080EJ4V0DS µPD4416008 Block Diagram VCC GND A0 A20 Address buffer Row decoder Memory cell array 16,777,216 bits I/O1 - I/O8 Input data controller Sense amplifier / Switching circuit Column decoder Output data controller Address buffer /CS /WE /OE Truth Table /CS H L L L /OE × L × H /WE × H L H Mode Not selected Read Write Output disable I/O High impedance DOUT DIN High impedance Supply current ISB ICC Remark × : Don’t care Data Sheet M14080EJ4V0DS 3 µPD4416008 Electrical Specifications Absolute Maximum Ratings Parameter Symbol VCC VT TA Tstg Condition Rating –0.5 Note to +4.0 –0.5 Note Unit V V • • Supply voltage Input / Output voltage Operating ambient temperature Storage temperature to +4.0 0 to 70 –55 to +125 °C °C Note –2.0 V (MIN.) (pulse width : 2 ns) Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply voltage High level input voltage Low level input voltage Operating ambient temperature Symbol VCC VIH VIL TA Condition MIN. 3.0 2.0 –0.3 Note 0 TYP. 3.3 MAX. 3.6 VCC + 0.3 +0.8 70 Unit V V V °C Note –2.0 V (MIN.) (pulse width : 2 ns) DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Input leakage current Output leakage current Symbol ILI ILO VIN = 0 V to VCC VI/O = 0 V to VCC, /CS = VIH or /OE = VIH or /WE = VIL Test condition MIN. –2 –2 TYP. MAX. +2 +2 Unit µA µA • • Operating supply current ICC /CS = VIL, II/O = 0 mA, Minimum cycle time Cycle time : 15 ns Cycle time : 17 ns 230 220 80 10 mA Standby supply current ISB ISB1 /CS = VIH, VIN = VIH or VIL, Minimum cycle time /CS ≥ VCC – 0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC – 0.2 V mA High level output voltage Low level output voltage VOH VOL IOH = –4.0 mA IOL = +8.0 mA 2.4 0.4 V V Remark VIN : Input voltage, VI/O : Input / Output voltage Capacitance (TA = 25 °C, f = 1 MHz) Parameter Input capacitance Input / Output capacitance Symbol CIN CI/O VIN = 0 V VI/O = 0 V Test condition MIN. TYP. MAX. 6 8 Unit pF pF Remarks 1. VIN : Input voltage, VI/O : Input / Output voltage 2. These parameters are periodically sampled and not 100% tested. 4 Data Sheet M14080EJ4V0DS µPD4416008 AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions LVTTL Interface Input Waveform (Rise and Fall Time ≤ 3 ns) 3.0 V 1.5 V GND Test Points 1.5 V Output Waveform 1.5 V Test Points 1.5 V Output Load AC characteristics directed with the note should be measured with the output load shown in Figure 1 or Figure 2. Figure 1 (for tAA, tACS, tOE, tOH) VTT = +1.5 V Figure 2 (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, tOW ) +3.3 V 50 Ω ZO = 50 Ω I/O (Output) 30 pF CL I/O (Output) 351 Ω 317 Ω 5 pF CL Remark CL includes capacitances of the probe and jig, and stray capacitances. Data Sheet M14080EJ4V0DS 5 µPD4416008 Read Cycle Parameter Symbol MIN. Read cycle time Address access time /CS access time /OE access time Output hold from address change /CS to output in low impedance /OE to output in low impedance /CS to output in high impedance /OE to output hold in high impedance tRC tAA tACS tOE tOH tCLZ tOLZ tCHZ tOHZ 3 3 0 7 7 15 15 15 7 3 3 0 8 8 -A15 MAX. MIN. 17 17 17 8 -A17 MAX. ns ns ns ns ns ns ns ns ns 2, 3 1 Unit Notes Notes 1. See the output load shown in Figure 1. 2. Transition is measured at ±200 mV from steady-state voltage with the output load shown in Figure 2. 3. These parameters are periodically sampled and not 100% tested. Read Cycle Timing Chart 1 (Address Access) tRC Address (Input) tAA tOH I/O (Output) Previous data out Data out Remarks 1. In read cycle, /WE should be fixed to high level. 2. /CS = /OE = VIL Read Cycle Timing Chart 2 (/CS Access) tRC Address (Input) tAA tACS /CS (Input) tCLZ /OE (Input) tOE tOLZ I/O (Output) High impedance Data output High impedance tOHZ tCHZ Caution Remark 6 Address valid prior to or coincident with /CS low level input. In read cycle, /WE should be fixed to high level. Data Sheet M14080EJ4V0DS µPD4416008 Write Cycle Parameter Symbol MIN. Write cycle time /CS to end of write Address valid to end of write Write pulse width Data valid to end of write Data hold time Address setup time Write recovery time /WE to output in high impedance Output active from end of write tWC tCW tAW tWP tDW tDH tAS tWR tWHZ tOW 3 15 10 10 10 7 0 0 1 7 3 -A15 MAX. MIN. 17 11 11 11 8 0 0 1 8 -A17 MAX. ns ns ns ns ns ns ns ns ns ns 1, 2 Unit Notes Notes 1. Transition is measured at ± 200 mV from steady-state voltage with the output load shown in Figure 2. 2. These parameters are periodically sampled and not 100% tested. Write Cycle Timing Chart 1 (/WE Controlled) tWC Address (Input) tCW /CS (Input) tAW tAS /WE (Input) tOW tWHZ I/O (Input / Output) Indefinite data output High impedance tDW tDH High impedance Indefinite data output tWP tWR Data input Cautions 1. /CS or /WE should be fixed to high level during address transition. • 2. Do not input data to the I/O pins while they are in the output state. Remarks 1. Write operation is done during the overlap time of a low level /CS, a low level /WE. 2. During tWHZ, I/O pins are in the output state, therefore the input signals of opposite phase to the output must not be applied. 3. When /WE is at low level, the I/O pins are always high impedance. When /WE is at high level, read operation is executed. Therefore /OE should be at high level to make the I/O pins high impedance. Data Sheet M14080EJ4V0DS 7 µPD4416008 Write Cycle Timing Chart 2 (/CS Controlled) tWC Address (Input) tAS /CS (Input) tAW tWP /WE (Input) tCW tWR tDW High impedance I/O (Input) Data input tDH High impedance Cautions 1. /CS or /WE should be fixed to high level during address transition. • Remark 2. Do not input data to the I/O pins while they are in the output state. Write operation is done during the overlap time of a low level /CS and a low level /WE. 8 Data Sheet M14080EJ4V0DS µPD4416008 Package Drawing 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) 54 28 detail of lead end F P E 1 A H G I S L C D M M 27 J N S B K NOTES 1. Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. 2. Dimension "A" does not include mold fiash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm per side. ITEM A B C D E F G H I J K L M N P MILLIMETERS 22.22 ± 0.05 0.91 MAX. 0.80 (T.P.) 0.32+ 0.08 − 0.07 0.10 ± 0.05 1.1 ± 0.1 1.00 11.76 ± 0.20 10.16 ± 0.10 0.80 ± 0.20 0.145+ 0.025 − 0.015 0.50 ± 0.10 0.13 0.10 3 °+ 7 ° −3° S54G5-80-9JF-2 Data Sheet M14080EJ4V0DS 9 µPD4416008 Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the µPD4416008. Type of Surface Mount Device µPD4416008 : 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) 10 Data Sheet M14080EJ4V0DS µPD4416008 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD o r GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet M14080EJ4V0DS 11 µPD4416008 • The information in this document is current as of December, 2000. The information is subject to change without notice. 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