DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44324082, 44324092, 44324182, 44324362
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
Description
The µPD44324082 is a 4,194,304-word by 8-bit, the µPD44324092 is a 4,194,304-word by 9-bit, the µPD44324182 is a 2,097,152-word by 18-bit and the µPD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD44324082, µPD44324092, µPD44324182 and µPD44324362 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA.
Features
• 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA package (13 x 15) • HSTL Interface • DLL circuitry for wide output data valid window and future frequency scaling • Pipelined double data rate operation • Common data input/output bus • Two-tick burst for low DDR transaction size • Two input clocks (K and K#) for precise DDR timing at clock rising edges only • Two output clocks (C and C#) for precise flight time and clock skew matching-clock and data delivered together to receiving device • Internally self-timed write control • Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed. • User programmable impedance output • Fast clock cycle time : 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz) • Simple control logic for easy depth expansion • JTAG boundary scan
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Document No. M16780EJ3V0DS00 (3rd edition) Date Published March 2006 NS CP(K) Printed in Japan
The mark shows major revised points.
2003
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
µPD44324082, 44324092, 44324182, 44324362
Ordering Information
Part number Cycle Time ns Clock Frequency MHz 270 250 200 270 250 200 270 250 200 270 250 200 270 250 200 270 250 200 270 250 200 270 250 200 1M x 36-bit 2M x 18-bit 4M x 9-bit 4M x 8-bit 1M x 36-bit 2M x 18-bit 4M x 9-bit 4M x 8-bit Organization (word x bit) Core Supply Voltage V 1.8 ± 0.1 HSTL 165-pin PLASTIC BGA (13 x 15) I/O Interface Package
µPD44324082F5-E37-EQ2 µPD44324082F5-E40-EQ2 µPD44324082F5-E50-EQ2 µPD44324092F5-E37-EQ2 µPD44324092F5-E40-EQ2 µPD44324092F5-E50-EQ2 µPD44324182F5-E37-EQ2 µPD44324182F5-E40-EQ2 µPD44324182F5-E50-EQ2 µPD44324362F5-E37-EQ2 µPD44324362F5-E40-EQ2 µPD44324362F5-E50-EQ2 µPD44324082F5-E37-EQ2-A µPD44324082F5-E40-EQ2-A µPD44324082F5-E50-EQ2-A µPD44324092F5-E37-EQ2-A µPD44324092F5-E40-EQ2-A µPD44324092F5-E50-EQ2-A µPD44324182F5-E37-EQ2-A µPD44324182F5-E40-EQ2-A µPD44324182F5-E50-EQ2-A µPD44324362F5-E37-EQ2-A µPD44324362F5-E40-EQ2-A µPD44324362F5-E50-EQ2-A
3.7 4.0 5.0 3.7 4.0 5.0 3.7 4.0 5.0 3.7 4.0 5.0 3.7 4.0 5.0 3.7 4.0 5.0 3.7 4.0 5.0 3.7 4.0 5.0
Remarks 1. QDR Consortium standard package size is 13 x 15 and 15 x 17. The footprint is commonly used. 2. Products with -A at the end of the part number are lead-free products.
2
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Pin Configurations
×××# indicates active low signal. 165-pin PLASTIC BGA (13 x 15) (Top View) [µPD44324082F5-EQ2] [µPD44324082F5-EQ2-A] 1 A B C D E F G H J K L M N P R CQ# NC NC NC NC NC NC DLL# NC NC NC NC NC NC TDO 2 VSS NC NC NC NC NC NC VREF NC NC DQ6 NC NC NC TCK 3 A NC NC NC DQ4 NC DQ5 VDDQ NC NC NC NC NC DQ7 A 4 R, W# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 NW1# NC A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K# K A VSS VSS VSS VSS VSS VSS VSS VSS VSS A C C# 7 NC NW0# A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 LD# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 A NC NC NC NC NC NC VDDQ NC NC NC NC NC NC A 10 A NC NC NC NC NC NC VREF DQ1 NC NC NC NC NC TMS 11 CQ DQ3 NC NC DQ2 NC NC ZQ NC NC DQ0 NC NC NC TDI
A DQ0 to DQ7 LD# R, W# NW0#, NW1# K, K# C, C# CQ, CQ# ZQ DLL#
: Address inputs : Data inputs / outputs : Synchronous load : Read Write input : Nibble Write data select : Input clock : Output clock : Echo clock : Output impedance matching : DLL disable
TMS TDI TCK TDO VREF VDD VDDQ VSS NC
: IEEE 1149.1 Test input : IEEE 1149.1 Test input : IEEE 1149.1 Clock input : IEEE 1149.1 Test output : HSTL input reference input : Power Supply : Power Supply : Ground : No connection
Remarks 1. Refer to Package Drawing for the index mark. 2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb. 2A of this product can also be used as NC.
Data Sheet M16780EJ3V0DS
3
µPD44324082, 44324092, 44324182, 44324362
165-pin PLASTIC BGA (13 x 15) (Top View) [µPD44324092F5-EQ2] [µPD44324092F5-EQ2-A] 1 A B C D E F G H J K L M N P R CQ# NC NC NC NC NC NC DLL# NC NC NC NC NC NC TDO 2 VSS NC NC NC NC NC NC VREF NC NC DQ7 NC NC NC TCK 3 A NC NC NC DQ5 NC DQ6 VDDQ NC NC NC NC NC DQ8 A 4 R, W# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 NC NC A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K# K A VSS VSS VSS VSS VSS VSS VSS VSS VSS A C C# 7 NC BW0# A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 LD# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 A NC NC NC NC NC NC VDDQ NC NC NC NC NC NC A 10 A NC NC NC NC NC NC VREF DQ2 NC NC NC NC NC TMS 11 CQ DQ4 NC NC DQ3 NC NC ZQ NC NC DQ1 NC NC DQ0 TDI
A DQ0 to DQ8 LD# R, W# BW0# K, K# C, C# CQ, CQ# ZQ DLL#
: Address inputs : Data inputs / outputs : Synchronous load : Read Write input : Byte Write data select : Input clock : Output clock : Echo clock : Output impedance matching : DLL disable
TMS TDI TCK TDO VREF VDD VDDQ VSS NC
: IEEE 1149.1 Test input : IEEE 1149.1 Test input : IEEE 1149.1 Clock input : IEEE 1149.1 Test output : HSTL input reference input : Power Supply : Power Supply : Ground : No connection
Remarks 1. Refer to Package Drawing for the index mark. 2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb. 2A of this product can also be used as NC.
4
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
165-pin PLASTIC BGA (13 x 15) (Top View) [µPD44324182F5-EQ2] [µPD44324182F5-EQ2-A] 1 A B C D E F G H J K L M N P R CQ# NC NC NC NC NC NC DLL# NC NC NC NC NC NC TDO 2 VSS DQ9 NC NC NC DQ12 NC VREF NC NC DQ15 NC NC NC TCK 3 A NC NC DQ10 DQ11 NC DQ13 VDDQ NC DQ14 NC NC DQ16 DQ17 A 4 R, W# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 BW1# NC A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K# K A0 VSS VSS VSS VSS VSS VSS VSS VSS VSS A C C# 7 NC BW0# A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 LD# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 A NC NC NC NC NC NC VDDQ NC NC NC NC NC NC A 10 A NC DQ7 NC NC NC NC VREF DQ4 NC NC DQ1 NC NC TMS 11 CQ DQ8 NC NC DQ6 DQ5 NC ZQ NC DQ3 DQ2 NC NC DQ0 TDI
A0, A DQ0 to DQ17 LD# R, W# BW0#, BW1# K, K# C, C# CQ, CQ# ZQ DLL#
: Address inputs : Data inputs / outputs : Synchronous load : Read Write input : Byte Write data select : Input clock : Output clock : Echo clock : Output impedance matching : DLL disable
TMS TDI TCK TDO VREF VDD VDDQ VSS NC
: IEEE 1149.1 Test input : IEEE 1149.1 Test input : IEEE 1149.1 Clock input : IEEE 1149.1 Test output : HSTL input reference input : Power Supply : Power Supply : Ground : No connection
Remarks 1. Refer to Package Drawing for the index mark. 2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb. 2A of this product can also be used as NC.
Data Sheet M16780EJ3V0DS
5
µPD44324082, 44324092, 44324182, 44324362
165-pin PLASTIC BGA (13 x 15) (Top View) [µPD44324362F5-EQ2] [µPD44324362F5-EQ2-A] 1 A B C D E F G H J K L M N P R CQ# NC NC NC NC NC NC DLL# NC NC NC NC NC NC TDO 2 VSS DQ27 NC DQ29 NC DQ30 DQ31 VREF NC NC DQ33 NC DQ35 NC TCK 3 A DQ18 DQ28 DQ19 DQ20 DQ21 DQ22 VDDQ DQ32 DQ23 DQ24 DQ34 DQ25 DQ26 A 4 R, W# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 BW2# BW3# A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K# K A0 VSS VSS VSS VSS VSS VSS VSS VSS VSS A C C# 7 BW1# BW0# A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 LD# A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 A NC NC NC NC NC NC VDDQ NC NC NC NC NC NC A 10 VSS NC DQ17 NC DQ15 NC NC VREF DQ13 DQ12 NC DQ11 NC DQ9 TMS 11 CQ DQ8 DQ7 DQ16 DQ6 DQ5 DQ14 ZQ DQ4 DQ3 DQ2 DQ1 DQ10 DQ0 TDI
A0, A DQ0 to DQ35 LD# R, W# BW0# to BW3# K, K# C, C# CQ, CQ# ZQ DLL#
: Address inputs : Data inputs / outputs : Synchronous load : Read Write input : Byte Write data select : Input clock : Output clock : Echo clock : Output impedance matching : DLL disable
TMS TDI TCK TDO VREF VDD VDDQ VSS NC
: IEEE 1149.1 Test input : IEEE 1149.1 Test input : IEEE 1149.1 Clock input : IEEE 1149.1 Test output : HSTL input reference input : Power Supply : Power Supply : Ground : No connection
Remarks 1. Refer to Package Drawing for the index mark. 2. 2A and 10A are expansion addresses: 10A for 72Mb and 2A for 144Mb. 2A and 10A of this product can also be used as NC.
6
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Pin Identification
Symbol A0 A Description Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K. All transactions operate on a burst of two words (one clock period of bus activity). A0 is used as the lowest order address bit permitting a random starting address within the burst operation on x18 and x36 devices. These inputs are ignored when device is deselected, i.e., NOP (LD# = H). Synchronous Data IOs: Input data must meet setup and hold times around the rising edges of K and K#. Output data is synchronized to the respective C and C# data clocks or to K and K# if C and C# are tied to HIGH. x8 device uses DQ0 to DQ7. x9 device uses DQ0 to DQ8. x18 device uses DQ0 to DQ17. x36 device uses DQ0 to DQ35. Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This definition includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period of bus activity). Synchronous Read/Write Input: When LD# is LOW, this input designates the access type (READ when R, W# is HIGH, WRITE when R, W# is LOW) for the loaded address. R, W# must meet the setup and hold times around the rising edge of K. Synchronous Byte Writes (Nibble Writes on x8): When LOW these inputs cause their respective byte or nibble to be registered and written during WRITE cycles. These signals must meet setup and hold times around the rising edges of K and K# for each of the two rising edges comprising the WRITE cycle. See Pin Configurations for signal to data relationships. x8 device uses NW0#, NW1#. x9 device uses BW0#. x18 device uses BW0#, BW1#. x36 device uses BW0# to BW3#. See Byte Write Operation for relation between BWx#, NWx# and Dxx. Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of C# is used as the output timing reference for first output data. The rising edge of C is used as the output reference for second output data. Ideally, C# is 180 degrees out of phase with C. When use of K and K# as the reference instead of C and C#, then fixed C and C# to High. Operation cannot be guaranteed unless C and C# are fixed to High (i.e. toggle of C and C#) Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q tristates. If C and C# are stopped (if K and K# are stopped in the single clock mode), CQ and CQ# will also stop. Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus impedance. DQ, CQ and CQ# output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to ground. The output impedance can be minimized by directly connect ZQ to VDDQ. This pin cannot be connected directly to GND or left unconnected. DLL Disable: When debugging the system or board, the operation can be performed at a clock frequency slower than TKHKH (MAX.) without the DLL circuit being used, if DLL# = L. The AC/DC characteristics cannot be guaranteed, however. IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is not used in the circuit. IEEE 1149.1 Clock Input: 1.8V I/O levels. This pin must be tied to VSS if the JTAG function is not used in the circuit. IEEE 1149.1 Test Output: 1.8V I/O level. HSTL Input Reference Voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers. Power Supply: 1.8V nominal. See DC Characteristics and Operating Conditions for range. Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC Characteristics and Operating Conditions for range.
(1/2)
DQ0 to DQxx
LD#
R, W#
BWx# NWx#
K, K#
C, C#
CQ, CQ#
ZQ
DLL#
TMS TDI TCK TDO VREF VDD VDDQ
Data Sheet M16780EJ3V0DS
7
µPD44324082, 44324092, 44324182, 44324362
(2/2)
Symbol VSS NC Power Supply: Ground No Connect: These signals are not connected internally. The logic level applied to the ball sites appears in the JTAG scan chain when JTAG scan. Description
8
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Block Diagram
CLK A0 Burst Logic D0 Q0 A0'
R Address LD# E Address Register W#
Compare C# C
K E
Write address Register A0' Input Register
A0''
Output control A0''' Logic
E
/A0'
WRITE Register Output Register WRITE Driver Sense Amps
0
2 :1 MUX
ZQ
A0' CLK /A0' A0'
Memory Array
K
1 Output Buffer E DQ
0 K# E Input Register 1 A0'''
Output Enable Register C R, W#` E R, W# Register
Data Sheet M16780EJ3V0DS
9
µPD44324082, 44324092, 44324182, 44324362
Power-on Sequence
The following two timing charts show the recommended power-on sequence, i.e., when starting the clock after VDD/VDDQ stable and when starting the clock before VDD/VDDQ stable.
1. Clock starts after VDD/VDDQ stable The clock is supplied from a controller. (a)
VDD/VDDQ VDD/VDDQ Stable (< ±0.1 V DC per 50 ns) DLL# 20 ns (MIN.) Clock Fix high (or tied to VDDQ)
Clock Start
Note
1,024 cycles or more Stable Clock
Normal Operation Start
Note Input a stable clock from the start.
(b)
VDD/VDDQ
VDD/VDDQ Stable (< ±0.1 V DC per 50 ns)
DLL#
Switched to high after Clock is stable.
Clock
Unstable Clock (level, frequency)
Clock Start
1,024 cycles or more Stable Clock
Normal Operation Start
(c)
VDD/VDDQ VDD/VDDQ Stable (< ±0.1 V DC per 50 ns) DLL# Fix high (or tied to VDDQ)
Clock
Unstable Clock (level, frequency) Clock Start
30 ns. (MIN.) Clock Stop
1,024 cycles or more Stable Clock
Normal Operation Start
10
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
2. Clock starts before VDD/VDDQ stable The clock is supplied from a clock generator. (a)
VDD/VDDQ VDD/VDDQ Stable (< ±0.1 V DC per 50 ns) DLL# Fix high (or tied to VDDQ)
Clock
Unstable Clock (level, frequency) Clock Start
30 ns. (MIN.) Clock Stop
1,024 cycles or more Stable Clock
Normal Operation Start
(b)
VDD/VDDQ VDD/VDDQ Stable (< ±0.1 V DC per 50 ns) High or low DLL# Switched to high after Clock is stable. 30 ns (MIN.) DLL# low
Clock
Unstable Clock (level, frequency) Clock keep running Clock Start
1,024 cycles or more Stable Clock
Normal Operation Start
Data Sheet M16780EJ3V0DS
11
µPD44324082, 44324092, 44324182, 44324362
Burst Sequence Linear Burst Sequence Table [µPD44324182, µPD44324362]
A0 External Address 1st Internal Burst Address 0 1 A0 1 0
Truth Table
Operation WRITE cycle Load address, input write data on two consecutive K and K# rising edge READ cycle Load address, read data on two consecutive C and C# rising edge NOP (No operation) Clock stop H X X X L→H Stopped L H L→H LD# R, W# L L CLK L→H DQ Data in Input data Input clock Data out Output data Output clock High-Z Previous state Q(A1) C#(t+1) ↑ Q(A2) C(t+2) ↑ D(A1) K(t+1) ↑ D(A2) K#(t+1) ↑
Remarks 1. H : High level, L : Low level, × : don’t care, ↑ : rising edge. 2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges except if C and C# are HIGH then Data outputs are delivered at K and K# rising edges. 3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of K. All control inputs are registered during the rising edge of K. 4. This device contains circuitry that ensure the outputs to be in high impedance during power-up. 5. Refer to state diagram and timing diagrams for clarification. 6. A1 refers to the address input during a WRITE or READ cycle. A2 refers to the next internal burst address in accordance with the linear burst sequence. 7. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most rapid restart by overcoming transmission line charging symmetrically.
12
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Byte Write Operation [µPD44324082]
Operation Write DQ0 to DQ7 Write DQ0 to DQ3 Write DQ4 to DQ7 Write nothing K L→H – L→H – L→H – L→H – K# – L→H – L→H – L→H – L→H NW0# 0 0 0 0 1 1 1 1 NW1# 0 0 1 1 0 0 1 1
Remark H : High level, L : Low level, → : rising edge. [µPD44324092]
Operation Write DQ0 to DQ8 Write nothing K L→H – L→H – K# – L→H – L→H BW0# 0 0 1 1
Remark H : High level, L : Low level, → : rising edge. [µPD44324182]
Operation Write DQ0 to DQ17 Write DQ0 to DQ8 Write DQ9 to DQ17 Write nothing K L→H – L→H – L→H – L→H – K# – L→H – L→H – L→H – L→H BW0# 0 0 0 0 1 1 1 1 BW1# 0 0 1 1 0 0 1 1
Remark H : High level, L : Low level, → : rising edge. [µPD44324362]
Operation Write DQ0 to DQ35 Write DQ0 to DQ8 Write DQ9 to DQ17 Write DQ18 to DQ26 Write DQ27 to DQ35 Write nothing K L→H – L→H – L→H – L→H – L→H – L→H – K# – L→H – L→H – L→H – L→H – L→H – L→H BW0# 0 0 0 0 1 1 1 1 1 1 1 1 BW1# 0 0 1 1 0 0 1 1 1 1 1 1 BW2# 0 0 1 1 1 1 0 0 1 1 1 1 BW3# 0 0 1 1 1 1 1 1 0 0 1 1
Remark H : High level, L : Low level, → : rising edge.
Data Sheet M16780EJ3V0DS
13
µPD44324082, 44324092, 44324182, 44324362
Bus Cycle State Diagram
LOAD NEW ADDRESS Count = 0
Load, Count = 2 Load, Count = 2 Read
Write
READ DOUBLE Count = Count + 2
WRITE DOUBLE Count = Count + 2
NOP, Count = 2
NOP, Count = 2
Load
NOP
NOP
Power UP
Supply voltage provided
Remarks 1. A0 is internally advanced in accordance with the burst order table. Bus cycle is terminated after burst count = 2. 2. State machine control timing sequence is controlled by K.
14
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Electrical Specifications
Absolute Maximum Ratings
Parameter Supply voltage Output supply voltage Input voltage Input / Output voltage Operating ambient temperature Storage temperature Symbol VDD VDDQ VIN VI/O TA Tstg Conditions MIN. –0.5 –0.5 –0.5 –0.5 0 –55 TYP. MAX. +2.5 VDD VDD + 0.5 (2.5 V MAX.) VDDQ + 0.5 (2.5 V MAX.) 70 +125 Unit V V V V °C °C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = 0 to 70°C)
Parameter Supply voltage Output supply voltage High level input voltage Low level input voltage Clock input voltage Reference voltage Symbol VDD VDDQ VIH (DC) VIL (DC) VIN VREF Conditions MIN. 1.7 1.4 VREF + 0.1 –0.3 –0.3 0.68 TYP. MAX. 1.9 VDD VDDQ + 0.3 VREF – 0.1 VDDQ + 0.3 0.95 Unit V V V V V V 1 1, 2 1, 2 1, 2 Note
Notes 1. During normal operation, VDDQ must not exceed VDD. 2. Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms Recommended AC Operating Conditions (TA = 0 to 70°C)
Parameter High level input voltage Low level input voltage Symbol VIH (AC) VIL (AC) Conditions MIN. VREF + 0.2 – TYP. MAX. – VREF – 0.2 Unit V V Note 1 1
Note 1. Overshoot: VIH (AC) ≤ VDD + 0.7 V for t ≤ TKHKH/2 Undershoot: VIL (AC) ≥ – 0.5 V for t ≤ TKHKH/2 Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than TKHKH (MIN.).
Data Sheet M16780EJ3V0DS
15
µPD44324082, 44324092, 44324182, 44324362
DC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V)
Parameter Symbol Test condition MIN. TYP. MAX. x8, x9 x18 Input leakage current I/O leakage current ILI ILO IDD VIN ≤ VIL or VIN ≥ VIH, II/O = 0 mA Cycle = MAX. -E37 -E40 -E50 -E37 -E40 -E50 VDDQ – 0.2 VDDQ/2–0.12 VSS VDDQ/2–0.12 – – – – –2 –2 – – 690 650 550 +2 +2 970 1,090 900 1,000 750 520 500 400 VDDQ VDDQ/2+0.12 0.2 VDDQ/2+0.12 V V V V 3, 4 3, 4 3, 4 3, 4 850 mA x36 Unit Note
µA µA
mA
Operating supply current (Read Write cycle)
Standby supply current (NOP)
ISB1
VIN ≤ VIL or VIN ≥ VIH, II/O = 0 mA Cycle = MAX.
High level output voltage
VOH(Low) |IOH| ≤ 0.1 mA VOH Note1
Low level output voltage
VOL(Low) IOL ≤ 0.1 mA VOL Note2
Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) ±15 % for values of 175 Ω ≤ RQ ≤ 350 Ω. 2. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) ±15 % for values of 175 Ω ≤ RQ ≤ 350 Ω. 3. AC load current is higher than the shown DC values. 4. HSTL outputs meet JEDEC HSTL Class I and standards. Capacitance (TA = 25°C, f = 1MHz)
Parameter Input capacitance (Address, Control) Input / Output capacitance (DQ, CQ, CQ#) Clock Input capacitance Cclk Vclk = 0 V 5 6 pF Symbol CIN CI/O Test conditions VIN = 0 V VI/O = 0 V MIN. TYP. 4 6 MAX. 5 7 Unit pF pF
Remark These parameters are periodically sampled and not 100% tested. Thermal Resistance
Parameter Thermal resistance (junction – ambient) Thermal resistance (junction – case) Symbol Test conditions MIN. TYP. 22.6 MAX. Unit °C/W
θ j-a
θ j-c
2.0
°C/W
Remark These parameters are simulated under the condition of air flow velocity = 1 m/s.
16
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
AC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V) AC Test Conditions (VDD = 1.8 ± 0.1 V, VDDQ = 1.4 to VDD ) Input waveform (Rise / Fall time ≤ 0.3 ns)
1.25 V
0.75 V
Test Points
0.75 V
0.25 V
Output waveform
VDDQ / 2
Test Points
VDDQ / 2
Output load condition Figure 1. External load at test
VDDQ / 2 0.75 V
VREF
50 Ω ZO = 50 Ω 250 Ω
SRAM
ZQ
Data Sheet M16780EJ3V0DS
17
µPD44324082, 44324092, 44324182, 44324362
Read and Write Cycle
Parameter Symbol -E37 (270 MHz) MIN. Clock Average Clock cycle time (K, K#, C, C#) Clock phase jitter (K, K#, C, C#) Clock HIGH time (K, K#, C, C#) Clock LOW time (K, K#, C, C#) Clock (active high) to Clock# (active low) (K→K#, C→C#) Clock# (active low) to Clock (active high) (K#→K, C#→C) Clock to data clock (K→C, K#→C#) 250 to 270 MHz 200 to 250 MHz 167 to 200 MHz 133 to 167 MHz < 133 MHz DLL lock time (K, C) K static to DLL reset Output Times C, C# HIGH to output valid C, C# HIGH to output hold C, C# HIGH to echo clock valid C, C# HIGH to echo clock hold CQ, CQ# HIGH to output valid CQ, CQ# HIGH to output hold C HIGH to output High-Z C HIGH to output Low-Z Setup Times Address valid to K rising edge Synchronous load input (LD#), read write input (R, W#) valid to K rising edge Data inputs and write data select inputs (BWx#, NWx#) valid to K, K# rising edge Hold Times K rising edge to address hold K rising edge to synchronous load input (LD#), read write input (R, W#) hold K, K# rising edge to data inputs and write data select inputs (BWx#, NWx#) hold TKHDX
0.35 – 0.35 – 0.4 – ns 5
-E40 (250 MHz) MIN.
4.0 – 1.6 1.6 1.8
-E50 (200 MHz) MIN.
5.0 – 2.0 2.0 2.2
Unit MAX.
8.4 0.2 – – – ns ns ns ns ns
Note
MAX.
8.4 0.2 – – –
MAX.
8.4 0.2 – – –
TKHKH TKC var TKHKL TKLKH TKHK#H
3.7 – 1.5 1.5 1.7
1 2
TK#HKH
1.7
–
1.8
–
2.2
–
ns
TKHCH
0 0 0 0 0
1.65 1.8 2.3 2.8 3.55 – –
– 0 0 0 0 1,024 30
– 1.8 2.3 2.8 3.55 – –
– – 0 0 0 1,024 30
– – 2.3 2.8 3.55 – –
ns
TKC lock TKC reset
1,024 30
Cycle ns
3
TCHQV TCHQX TCHCQV TCHCQX TCQHQV TCQHQX TCHQZ TCHQX1
– – 0.45 – – 0.45 – – 0.3 – – 0.45
0.45 – 0.45 – 0.3 – 0.45 –
– – 0.45 – – 0.45 – – 0.3 – – 0.45
0.45 – 0.45 – 0.3 – 0.45 –
– – 0.45 – – 0.45 – – 0.35 – – 0.45
0.45 – 0.45 – 0.35 – 0.45 –
ns ns ns ns ns ns ns ns 4 4
TAVKH TIVKH
0.5 0.5
– –
0.5 0.5
– –
0.6 0.6
– –
ns ns
5 5
TDVKH
0.35
–
0.35
–
0.4
–
ns
5
TKHAX TKHIX
0.5 0.5
– –
0.5 0.5
– –
0.6 0.6
– –
ns ns
5 5
18
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH (MAX.) without the DLL circuit being used, if DLL# = L. The AC/DC characteristics cannot be guaranteed, however. 2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. TKC var (MAX.) indicates a peak-to-peak value. 3. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable. It is recommended that the device is kept NOP (LD# = H) during these cycles. 4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a ± 0.1 ns variation from echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations. 5. This is a synchronous device. All addresses, data and control lines must meet the specified setup and hold times for all latching clock edges. Remarks 1. This parameter is sampled. 2. Test conditions as specified with the output loading as shown in AC Test Conditions unless otherwise noted. 3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.). 4. If C, C# are tied HIGH, K, K# become the references for C, C# timing parameters. 5. VDDQ is 1.5 V DC.
Data Sheet M16780EJ3V0DS
19
µPD44324082, 44324092, 44324182, 44324362
Read and Write Timing
NOP READ NOP READ (burst of 2) (burst of 2) NOP READ WRITE WRITE (burst of 2) (burst of 2) (burst of 2)
1 K
2
TKHKH
3
4
5
6
7
8
9
10
TKHKL TKLKH TKLKH
TKHK#H
TK#HKH
K#
LD#
TIVKH TKHIX
R, W# TAVKH TKHAX Address A0 A1 A2 A3
TKHDX TDVKH
A4
TKHDX TDVKH
DQ
Qx2
TCHQX1 TKHCH TKHCH TCHQV
Q01
Q02
Q11
Q12
D21
D22
D31
D32
Q41
Q42 TCQHQX
TCHQX TCHQV
TCHQZ TCHQX TCQHQV
CQ
TCHCQX TCHCQV
CQ#
TCHCQX TCHCQV
C
TKHKL TKLKH TKHKH TKHK#HTK#HKH
C#
Remarks 1. Q01 refers to output from address A0. Q02 refers to output from the next internal burst address following A0, etc. 2. Outputs are disabled (high impedance) 2.5 clocks after the last READ (LD# = L, R, W# = H) is input in the sequences of [READ]-[NOP]. 3. The second NOP cycle at the cycle "5" is not necessary for correct device operation; however, at high clock frequencies it may be required to prevent bus contention.
20
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Application Example
SRAM#1 DQ SRAM Controller Data IO Address LD# R, W# BW# SRAM#1 CQ/CQ# Vt R A
ZQ CQ# CQ
R= 250 Ω
...
DQ A
SRAM#4
ZQ CQ# CQ
R= 250 Ω
LD# R, W# BWx# C/C# K/K#
LD# R, W# BWx# C/C# K/K#
R
Vt
...
Vt R Vt R
SRAM#4 CQ/CQ# Source CLK/CLK# Return CLK/CLK#
Vt R R = 50 Ω Vt = Vref
Remark AC specifications are defined at the condition of SRAM outputs, CQ, CQ# and DQ with termination.
Data Sheet M16780EJ3V0DS
21
µPD44324082, 44324092, 44324182, 44324362
JTAG Specification
These products support a limited set of JTAG functions as in IEEE standard 1149.1. Test Access Port (TAP) Pins
Pin name TCK Pin assignments 2R Test Clock Input. Description All input are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS TDI 10R 11R Test Mode Select. This is the command input for the TAP controller state machine. Test Data Input. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction. TDO 1R Test Data Output. This is the output side of the serial registers placed between TDI and TDO. Output changes in response to the falling edge of TCK.
Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP. JTAG DC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V, unless otherwise noted)
Parameter JTAG Input leakage current JTAG I/O leakage current Symbol ILI ILO Conditions 0 V ≤ VIN ≤ VDD 0 V ≤ VIN ≤ VDDQ, Outputs disabled JTAG input high voltage JTAG input low voltage JTAG output high voltage VIH VIL VOH1 VOH2 JTAG output low voltage VOL1 VOL2 | IOHC | = 100 µA | IOHT | = 2 mA IOLC = 100 µA IOLT = 2 mA 1.3 –0.3 1.6 1.4 – – – – – – – – VDD+0.3 +0.5 – – 0.2 0.4 V V V V V V MIN. –5.0 –5.0 TYP. – – MAX. +5.0 +5.0 Unit Note
µA µA
22
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
JTAG AC Test Conditions
Input waveform (Rise / Fall time ≤ 1 ns)
1.8 V
0.9 V
Test Points
0.9 V
0V
Output waveform
0.9 V
Test Points
0.9 V
Output load Figure 2. External load at test
VTT = 0.9 V
50 Ω
ZO = 50 Ω TDO
20 pF
Data Sheet M16780EJ3V0DS
23
µPD44324082, 44324092, 44324182, 44324362
JTAG AC Characteristics (TA = 0 to 70 °C)
Parameter Clock Clock cycle time Clock frequency Clock high time Clock low time tTHTH fTF tTHTL tTLTH 100 – 40 40 – – – – – 10 – – ns MHz ns ns Symbol Conditions MIN. TYP. MAX. Unit Note
Output time TCK low to TDO unknown TCK low to TDO valid tTLOX tTLOV 0 – – – – 20 ns ns
Setup time TMS setup time TDI valid to TCK high Capture setup time tMVTH tDVTH tCS 10 10 10 – – – – – – ns ns ns
Hold time TMS hold time TCK high to TDI invalid Capture hold time tTHMX tTHDX tCH 10 10 10 – – – – – – ns ns ns
JTAG Timing Diagram
tTHTH
TCK
tMVTH
tTHTL
tTLTH
TMS
tTHMX
tDVTH
TDI
tTHDX
tTLOX
tTLOV
TDO
24
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Scan Register Definition (1)
Register name Instruction register Description The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run-test/idle or the various data register state. The register can be loaded when it is placed between the TDI and TDO pins. The instruction register is automatically preloaded with the IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state. Bypass register The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAMs TAP to another device in the scan chain with as little delay as possible. ID register The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when the controller is put in capture-DR state with the IDCODE command loaded in the instruction register. The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR state. Boundary register The boundary register, under the control of the TAP controller, is loaded with the contents of the RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to activate the boundary register. The Scan Exit Order tables describe which device bump connects to each boundary register location. The first column defines the bit’s position in the boundary register. The second column is the name of the input or I/O at the bump and the third column is the bump number.
Scan Register Definition (2)
Register name Instruction register Bypass register ID register Boundary register Bit size 3 1 32 109 Unit bit bit bit bit
ID Register Definition
Part number Organization ID [31:28] vendor revision no. 4M x 8 4M x 9 2M x 18 1M x 36 XXXX XXXX XXXX XXXX ID [27:12] part no. 0000 0000 0011 1101 0000 0000 0011 1110 0000 0000 0011 1111 0000 0000 0100 0000 ID [11:1] vendor ID no. 00000010000 00000010000 00000010000 00000010000 ID [0] fix bit 1 1 1 1
µPD44324082 µPD44324092 µPD44324182 µPD44324362
Data Sheet M16780EJ3V0DS
25
µPD44324082, 44324092, 44324182, 44324362
SCAN Exit Order
Bit no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC x8 Signal name x9 C# C A A A A A A A DQ0 DQ0 DQ0 NC NC NC NC NC NC NC NC NC NC DQ9 NC NC x18 x36 Bump ID 6R 6P 6N 7P 7N 7R 8R 8P 9R 11P 10P 10N 9P Bit no. 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 NC A A A A A A A A0 LD# NC NC BW1# A0 x8 NC NC NC NC NC NC Signal name x9 NC NC NC NC NC NC x18 NC NC x36 NC NC Bump ID 10D 9E 10C 11D 9C 9D 11B 11C 9B 10B 11A A VSS 10A 9A 8B 7C 6C 8A 7A 7B 6B 6A NC BW3# 5B 5A 4A 5C 4B 3A 2A 1A 2B 3B 1C 1B 3D 3C 1D Bit no. 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 NC NC NC NC NC NC x8 NC Signal name x9 NC x18 NC x36 NC Bump ID 2C
DQ4 DQ5 DQ11 DQ20 3E NC NC NC NC NC NC NC NC NC NC NC DQ29 2D NC NC NC NC 2E 1E 2F 3F 1G 1F
DQ7 DQ17 NC DQ16 NC NC NC NC
NC DQ12 DQ30 NC NC NC NC DQ21 NC NC NC NC
DQ3 DQ4 DQ8 DQ8 NC NC NC NC NC NC CQ NC NC NC DQ7 NC NC
DQ5 DQ6 DQ13 DQ22 3G NC NC NC DQ31 2G 1H NC NC 1J 2J
DLL# NC NC NC NC
DQ1 DQ11 10M NC DQ10 11N NC NC NC NC 9M 9N 11L 11M 9L 10L 11K
NC DQ14 DQ23 3K NC NC NC NC DQ32 NC NC NC NC 3J 2K 1K 2L 3L 1M 1L
DQ0 DQ1 DQ2 DQ2 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC DQ1 NC NC
55 NW0# BW0# BW0# BW0# 56 57 58 NC NC K K#
DQ6 DQ7 DQ15 DQ33 NC NC NC NC NC NC NC NC NC NC NC DQ24 NC NC NC NC
DQ3 DQ3
NC DQ12 10K NC NC NC NC 9J 9K 10J 11J 11H NC NC NC NC 10G 9G 11F
59 NW1# NC BW1# BW2# 60 61 62 63 64 65 66 67 68 69 70 71 72 NC NC NC NC NC NC NC R, W# A A A VSS CQ# NC NC NC NC DQ9 DQ27 NC DQ18 NC NC NC NC
NC DQ16 DQ25 3N NC NC NC NC DQ34 3M NC NC NC NC 1N 2M
DQ1 DQ2 DQ4 DQ13 NC NC ZQ NC DQ4
DQ7 DQ8 DQ17 DQ26 3P NC NC NC NC NC NC A A A A A A
–
NC DQ35 2N NC NC NC NC 2P 1P 3R 4R 4P 5P 5N 5R
Internal
DQ5 DQ5
NC DQ14 11G NC NC NC NC 9F 10F 11E
NC DQ10 DQ19 NC NC NC DQ28 NC NC
DQ2 DQ3 DQ6 DQ6 NC NC
NC DQ15 10E
Remark
Bump ID 10A of bit no. 48 can also be used as NC if the product is x36. Bump ID 2A of bit no. 64 can also be used as NC. The register always indicates a low level, however.
26
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
JTAG Instructions
Instructions EXTEST Description The EXTEST instruction allows circuitry external to the component package to be tested. Boundaryscan register cells at output pins are used to apply test vectors, while those at input pins capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST, the output drive is turned on and the PRELOAD data is driven onto the output pins. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the test-logic-reset state. BYPASS When the BYPASS instruction is loaded in the instruction register, the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE /
PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the captureDR state loads the data in the RAMs input and DQ pins into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable input will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM DQ pins are forced to an inactive drive state (high impedance) and the boundary register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state.
JTAG Instruction Coding
IR2 0 0 0 0 1 1 1 1 IR1 0 0 1 1 0 0 1 1 IR0 0 1 0 1 0 1 0 1 Instruction EXTEST IDCODE SAMPLE-Z RESERVED SAMPLE / PRELOAD RESERVED RESERVED BYPASS 2 2 1 2 Note
Notes 1. TRISTATE all DQ pins and CAPTURE the pad values into a SERIAL SCAN LATCH. 2. Do not use this instruction code because the vendor uses it to evaluate this product.
Data Sheet M16780EJ3V0DS
27
µPD44324082, 44324092, 44324182, 44324362
Output Pin States of CQ, CQ# and Q
Instructions Control-Register Status CQ,CQ# EXTEST 0 1 IDCODE 0 1 SAMPLE-Z 0 1 SAMPLE 0 1 BYPASS 0 1 Update Update SRAM SRAM Hi-Z Hi-Z SRAM SRAM SRAM SRAM Output Pin Status Q Hi-Z Update SRAM SRAM Hi-Z Hi-Z SRAM SRAM SRAM SRAM Note
Remark
The output pin statuses during each instruction vary according to the Control-Register status (value of Boundary Scan Register, bit no. 109). There are three statuses: Update : Contents of the “Update Register” are output to the output pin (QDR Pad). SRAM : Contents of the SRAM internal output “SRAM Output” are output to the output pin (QDR Pad). Hi-Z : The output pin (QDR Pad) becomes Hi-Z by controlling of the “Hi-Z JTAG ctrl”. The Control-Register status is set during Update-DR at the EXTEST or SAMPLE instruction.
Boundary Scan Register CAPTURE Register
Update Register Update
SRAM Output
QDR Pad SRAM Output Driver
SRAM
Hi-Z
Hi-Z JTAG ctrl
28
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Boundary Scan Register Status of Output Pins CQ, CQ# and Q
Instructions SRAM Status Boundary Scan Register Status CQ,CQ# EXTEST READ (Lo-Z) NOP (Hi-Z) IDCODE READ (Lo-Z) NOP (Hi-Z) SAMPLE-Z READ (Lo-Z) NOP (Hi-Z) SAMPLE READ (Lo-Z) NOP (Hi-Z) BYPASS READ (Lo-Z) NOP (Hi-Z) Pad Pad – – Pad Pad Internal Internal – – Q Pad Pad – – Pad Pad Internal Pad – – No definition No definition Note
Remark
The Boundary Scan Register statuses during execution each instruction vary according to the instruction code and SRAM operation mode. There are two statuses: Pad : Contents of the output pin (QDR Pad) are captured in the “CAPTURE Register” in the Boundary Scan Register. Internal : Contents of the SRAM internal output “SRAM Output” are captured in the “CAPTURE Register” in the Boundary Scan Register.
Pad
Boundary Scan Register CAPTURE Register Internal Update Register SRAM Output
QDR Pad SRAM Output Driver
Hi-Z JTAG ctrl
Data Sheet M16780EJ3V0DS
29
µPD44324082, 44324092, 44324182, 44324362
TAP Controller State Diagram
1
Test-Logic-Reset
0 1 1 1
0
Run-Test / Idle
Select-DR-Scan
0 1 1
Select-IR-Scan
0
Capture-DR
0
Capture-IR
0
Shift-DR
1 1
0
Shift-IR
1 1
0
Exit1-DR
0
Exit1-IR
0
Pause-DR
1 0
0
Pause-IR
1 0
0
Exit2-DR
1
Exit2-IR
1
Update-DR
1 0
Update-IR
1 0
Disabling the Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS may be left open but fix them to VDD via a resistor of about 1 kΩ when the TAP controller is not used. TDO should be left unconnected also when the TAP controller is not used.
30
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Run-Test/Idle
Update-IR Exit1-IR
Shift-IR
Exit2-IR
Exit1-IR
Shift-IR
Capture-IR Select-IR-Scan Select-DR-Scan Run-Test/Idle
Test Logic Operation (Instruction Scan)
IDCODE
Pause-IR
New Instruction
Test-Logic-Reset
TDI
Controller state
Instruction Register state
TDO TMS TCK
Output Inactive
Data Sheet M16780EJ3V0DS
31
µPD44324082, 44324092, 44324182, 44324362
Test-Logic-Reset
Select-IR-Scan Select-DR-Scan
Run-Test/Idle
Update-DR Exit1-DR
Shift-DR
Exit2-DR
Exit1-DR
Shift-DR
Capture-DR Select-DR-Scan
Instruction
Pause-DR
IDCODE
Run-Test/Idle
Test Logic (Data Scan)
TMS
TDI
Controller state
32
Data Sheet M16780EJ3V0DS
Instruction Register state
TDO TCK
Output Inactive
µPD44324082, 44324092, 44324182, 44324362
Package Drawing
165-PIN PLASTIC BGA (13x15)
E wSB ZD B
ZE
A D
11 10 9 8 7 6 5 4 3 2 1 RPNML K J HGFEDCBA
INDEX MARK
wSA A
y1
S
A2 S
y
S
e
A1
(UNIT:mm) ITEM D E w e A A1 A2 b x y y1 ZD ZE DIMENSIONS 13.00 ± 0.10 15.00 ± 0.10 0.15 1.00 1.40 ± 0.11 0.40 ± 0.05 1.00 0.50 ± 0.05 0.08 0.10 0.20 1.50 0.50 P165F5-100-EQ2
φb
φx
M
S AB
Data Sheet M16780EJ3V0DS
33
µPD44324082, 44324092, 44324182, 44324362
Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of these products. Types of Surface Mount Devices
µPD44324082F5-EQ2 µPD44324092F5-EQ2 µPD44324182F5-EQ2 µPD44324362F5-EQ2
: : : :
165-pin PLASTIC BGA (13 x 15) 165-pin PLASTIC BGA (13 x 15) 165-pin PLASTIC BGA (13 x 15) 165-pin PLASTIC BGA (13 x 15) 165-pin PLASTIC BGA (13 x 15) 165-pin PLASTIC BGA (13 x 15) 165-pin PLASTIC BGA (13 x 15) 165-pin PLASTIC BGA (13 x 15)
µPD44324082F5-EQ2-A : µPD44324092F5-EQ2-A : µPD44324182F5-EQ2-A : µPD44324362F5-EQ2-A :
34
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
Revision History
Edition/ Date This edition 3rd edition/ Mar. 2006 Page Previous edition Addition -E37 (270 MHz) Type of revision Location Description (Previous edition → This edition)
Throughout Throughout
Data Sheet M16780EJ3V0DS
35
µPD44324082, 44324092, 44324182, 44324362
[ MEMO ]
36
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
[ MEMO ]
Data Sheet M16780EJ3V0DS
37
µPD44324082, 44324092, 44324182, 44324362
[ MEMO ]
38
Data Sheet M16780EJ3V0DS
µPD44324082, 44324092, 44324182, 44324362
N OTES FOR CMOS DEVICES
1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). 2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with mounted semiconductor devices. 4 STATUS BEFORE INITIALIZATION Power-on does not necessarily define the initial status of a MOS device. Immediately after the power source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the reset signal is received. A reset operation must be executed immediately after power-on for devices with reset functions. 5 POWER ON/OFF SEQUENCE In the case of a device that uses different power supplies for the internal operation and external interface, as a rule, switch on the external power supply after switching on the internal power supply. When switching the power supply off, as a rule, switch off the external power supply and then the internal power supply. Use of the reverse power on/off sequences may result in the application of an overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for each device and according to related specifications governing the device. 6 INPUT OF SIGNAL DURING POWER OFF STATE Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Input of signals during the power off state must be judged separately for each device and according to related specifications governing the device.
Data Sheet M16780EJ3V0DS
39
µPD44324082, 44324092, 44324182, 44324362
• T he information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
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