UPD444004LLE-A8

DATA SHEET MOS INTEGRATED CIRCUIT µPD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444004L is packaged in a 32-pin PLASTIC SOJ. Features • 1,048,576 words by 4 bits organization • Fast access time : 8, 10, 12 ns (MAX.) • Output Enable input for easy application • Single +3.3 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 180 160 150 At standby 5 µPD444004LLE-A8 µPD444004LLE-A10 µPD444004LLE-A12 32-pin PLASTIC SOJ (10.16 mm (400)) 8 10 12 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M14427EJ4V0DS00 (4th edition) Date Published May 2002 NS CP(K) Printed in Japan The mark shows major revised points. © 1999 µPD444004L Pin Configuration (Marking Side) /××× indicates active low signal. 32-pin PLASTIC SOJ (10.16 mm (400)) A0 A1 A2 A3 A4 /CS I/O1 VCC GND I/O2 /WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 /OE I/O4 GND VCC I/O3 A14 A13 A12 A11 A10 NC A0 - A19 : Address Inputs I/O1 - I/O4 : Data Inputs / Outputs /CS /WE /OE VCC GND NC : Chip Select : Write Enable : Output Enable : Power supply : Ground : No connection Remark Refer to Package Drawing for the 1-pin index mark. 2 Data Sheet M14427EJ4V0DS µPD444004L Block Diagram Address buffer A0 | A19 Row decoder Memory cell array 4,194,304 bits I/O1 | I/O4 Input data controller Sense amplifier / Switching circuit Column decoder Output data controller Address buffer /CS /OE /WE VCC GND Truth Table /CS H L L L /OE /WE Mode Not selected Read Write Output disable I/O High impedance DOUT DIN High impedance Supply current ISB ICC × L × H L H × H Remark × : Don’t care Data Sheet M14427EJ4V0DS 3 µPD444004L Electrical Specifications Absolute Maximum Ratings Parameter Supply voltage Input / Output voltage Operating ambient temperature Storage temperature Symbol VCC VT TA Tstg Condition –0.5 Rating Note Unit V V °C °C to +4.0 –0.5 Note to +4.0 0 to 70 –55 to +125 Note –2.0 V (MIN.) (pulse width : 2 ns) Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply voltage High level input voltage Low level input voltage Operating ambient temperature Symbol VCC VIH VIL TA Condition MIN. 3.0 2.0 –0.3 0 Note TYP. 3.3 MAX. 3.6 VCC+0.3 +0.8 70 Unit V V V °C Note –2.0 V (MIN.) (pulse width : 2 ns) 4 Data Sheet M14427EJ4V0DS µPD444004L DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Input leakage current Output leakage current Symbol ILI ILO Test condition VIN = 0 V to VCC VI/O = 0 V to VCC, /CS = VIH or /OE = VIH or /WE = VIL Operating supply current ICC /CS = VIL, II/O = 0 mA, Minimum cycle time Standby supply current ISB ISB1 Cycle time : 8 ns Cycle time : 10 ns Cycle time : 12 ns 180 160 150 40 5 mA mA MIN. –2 –2 TYP. MAX. +2 +2 Unit µA µA /CS = VIH, VIN = VIH or VIL /CS ≥ VCC – 0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC – 0.2 V High level output voltage Low level output voltage VOH VOL IOH = –4.0 mA IOL = +8.0 mA 2.4 0.4 V V Remark VIN : Input voltage VI/O : Input / Output voltage Capacitance (TA = 25 °C, f = 1 MHz) Parameter Input capacitance Input / Output capacitance Symbol CIN CI/O VIN = 0 V VI/O = 0 V Test condition MIN. TYP. MAX. 6 8 Unit pF pF Remarks 1. VIN : Input voltage VI/O : Input / Output voltage 2. These parameters are periodically sampled and not 100% tested. Data Sheet M14427EJ4V0DS 5 µPD444004L AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions Input Waveform (Rise and Fall Time ≤ 3 ns) 3.0 V 1.5 V GND Test Points 1.5 V Output Waveform 1.5 V Test Points 1.5 V Output Load AC characteristics directed with the note should be measured with the output load shown in Figure 1 or Figure 2. Figure 1 (tAA, tACS, tOE, tOH) VTT = +1.5 V Figure 2 (tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, tOW ) +3.3 V 50 Ω ZO = 50 Ω I/O (Output) 30 pF CL I/O (Output) 351 Ω 317 Ω 5 pF CL Remark CL includes capacitances of the probe and jig, and stray capacitances. 6 Data Sheet M14427EJ4V0DS µPD444004L Read Cycle Parameter Symbol MIN. Read cycle time Address access time /CS access time /OE access time Output hold from address change /CS to output in low impedance /OE to output in low impedance /CS to output in high impedance /OE to output hold in high impedance tRC tAA tACS tOE tOH tCLZ tOLZ tCHZ tOHZ 3 3 0 4 4 8 8 8 4 3 3 0 5 5 -A8 MAX. MIN. 10 10 10 5 3 3 0 6 6 -A10 MAX. MIN. 12 12 12 6 -A12 MAX. ns ns ns ns ns ns ns ns ns 2, 3 1 Unit Notes Notes 1. See the output load shown in Figure 1. 2. Transition is measured at ± 200 mV from steady-state voltage with the output load shown in Figure 2. 3. These parameters are periodically sampled and not 100% tested. Read Cycle Timing Chart 1 (Address Access) tRC Address (Input) tAA tOH I/O (Output) Previous data out Data out Remarks 1. In read cycle, /WE should be fixed to high level. 2. /CS = /OE = VIL Data Sheet M14427EJ4V0DS 7 µPD444004L Read Cycle Timing Chart 2 (/CS Access) tRC Address (Input) tAA tACS /CS (Input) tCLZ /OE (Input) tOE tOLZ I/O (Output) High impedance Data out High impedance tOHZ tCHZ Caution Address valid prior to or coincident with /CS low level input. Remark In read cycle, /WE should be fixed to high level. 8 Data Sheet M14427EJ4V0DS µPD444004L Write Cycle Parameter Symbol MIN. Write cycle time /CS to end of write Address valid to end of write Write pulse width Data valid to end of write Data hold time Address setup time Write recovery time /WE to output in high impedance Output active from end of write tWC tCW tAW tWP tDW tDH tAS tWR tWHZ tOW 3 8 6 6 6 4 0 0 0 4 3 -A8 MAX. MIN. 10 7 7 7 5 0 0 0 5 3 -A10 MAX. MIN. 12 8 8 8 6 0 0 0 6 -A12 MAX. ns ns ns ns ns ns ns ns ns ns 1, 2 Unit Notes Notes 1. Transition is measured at ± 200 mV from steady-state voltage with the output load shown in Figure 2. 2. These parameters are periodically sampled and not 100% tested. Write Cycle Timing Chart 1 (/WE Controlled) tWC Address (Input) tCW /CS (Input) tAW tAS /WE (Input) tOW tWHZ I/O (Input / Output) Indefinite data out High impedance tDW Data in tDH High impedance Indefinite data out tWP tWR Cautions 1. /CS or /WE should be fixed to high level during address transition. 2. Do not input data to the I/O pins while they are in the output state. Remarks 1. Write operation is done during the overlap time of a low level /CS and a low level /WE. 2. When /WE is at low level, the I/O pins are always high impedance. When /WE is at high level, read operation is executed. Therefore /OE should be at high level to make the I/O pins high impedance. Data Sheet M14427EJ4V0DS 9 µPD444004L Write Cycle Timing Chart 2 (/CS Controlled) tWC Address (Input) tAS /CS (Input) tAW tWP /WE (Input) tCW tWR tDW High impedance I/O (Input) Data in tDH High impedance Cautions 1. /CS or /WE should be fixed to high level during address transition. 2. Do not input data to the I/O pins while they are in the output state. Remark Write operation is done during the overlap time of a low level /CS and a low level /WE. 10 Data Sheet M14427EJ4V0DS µPD444004L Package Drawing 32-PIN PLASTIC SOJ (10.16 mm (400)) B 32 17 C D 1 G J F E 16 U S Q S T M K I H N M P NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM B C D E F G H I J K M N P Q T U MILLIMETERS 21.26 ± 0.2 10.16 11.18 ± 0.2 1.005 ± 0.1 0.74 3.5 ± 0.2 2.545 ± 0.2 0.8 MIN. 2.6 1.27(T.P.) 0.40 ± 0.10 0.12 9.4 ± 0.20 0.1 R0.85 0.20 + 0.10 − 0.05 P32LE-400A-1 Data Sheet M14427EJ4V0DS 11 µPD444004L Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the µPD444004L. Type of Surface Mount Device µPD444004LLE : 32-pin PLASTIC SOJ (10.16 mm (400)) 12 Data Sheet M14427EJ4V0DS µPD444004L Revision History Edition/ Date 4th edition/ May 2002 Page This edition p.1, 2, 11, 12 Previous edition p.1, 2, 12, 13 Type of revision Location Description (Previous edition → This edition) Deletion Ordering Information, Pin Configuration, Package Drawing, Type of Surface Mount Device 32-pin PLASTIC TSOP (II) p.5 p.7, 9 p.5 p.7, 9 Deletion Deletion DC Characteristics Read Cycle, Write Cycle Remark 2 Remark Data Sheet M14427EJ4V0DS 13 µPD444004L [MEMO] 14 Data Sheet M14427EJ4V0DS µPD444004L NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD o r GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet M14427EJ4V0DS 15 µPD444004L • The information in this document is current as of May, 2002. The information is subject to change without notice. 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