UPD5747T6J-E4

DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount. FEATURES • Low Noise • High Gain : NV = −101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ • Built-in the capacitor for RF noise immunity • High ESD voltage • 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) APPLICATIONS • Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package 3-pin thin-type leadless minimold (Pb-Free) Marking 6X Supplying Form • Embossed tape 8 mm wide • Pin 3 (GND) face the perforation side of the tape • Qty 10 kpcs/reel μPD5747T6J-E4 μPD5747T6J-E4-A Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5747T6J Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10776EJ01V0DS (1st edition) Date Published July 2009 NS Printed in Japan 2009 μPD5747T6J ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Input Voltage (IN-GND) Input Current (IN-GND) Output Voltage (OUT-GND) Output Current (OUT-GND) Channel Temperature Operating Ambient Temperature Storage Temperature Symbol Vin Iin Vout Iout Tch TA Tstg Ratings −0.5 to +0.5 0.5 0 to +5 0.5 130 −40 to +85 −65 to +150 Unit V mA V mA °C °C °C RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Supply Voltage Note Symbol VDD MIN. 1.0 TYP. 1.5 MAX. 5.0 Unit V Note RL = 2.2 kΩ ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Circuit Current Input Capacitance Voltage Gain Symbol IDD Cinput GV Test Conditions VDD = 1.5 V, Vin = 0 V, RL = 2.2 kΩ VDD = 1.5 V, RL = 2.2 kΩ, f = 1 MHz VDD = 1.5 V, Vin = 10 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz, see Test Circuit Reduced Voltage Gain Characteristics VDD = 1.5 → 1.0 V, Vin = 10 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz, see Test Circuit Frequency Characteristics MIN. 140 − 4.5 − TYP. 190 1.5 5.7 MAX. 250 − 7.0 − Unit μA pF dB ΔGVV 0.7 dB ΔGVf VDD = 1.5 V, Vin = 10 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz → 110 Hz, see Test Circuit VDD = 1.5 V, Vin = 0 V, RL = 2.2 kΩ, Cin = 3 pF, A-Curve, see Test Circuit VDD = 1.5 V, Vout = 50 mV, RL = 2.2 kΩ, Cin = 3 pF, f = 1 kHz, see Test Circuit − 0 − dB Output Noise Voltage NV − − −101 − − dBV Total Harmonic Distortion THD 0.7 % TEST CIRCUIT (Voltage Gain, Frequency Characteristics, Output Noise Voltage, Total Harmonic Distortion) VDD 2.2 kΩ + IN Vin 3 pF OUT Vout GND 33 μF 2 Data Sheet PU10776EJ01V0DS μPD5747T6J TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 500 RL = 2.2 kΩ Voltage Gain GV (dB) VOLTAGE GAIN vs. SUPPLY VOLTAGE 10 Circuit Current IDD (μA) 400 8 300 6 200 4 Cin = 3 pF RL = 2.2 kΩ Vin = 10 mV f = 1 kHz 0 1 2 3 4 5 100 2 0 0 1 2 3 4 5 0 Supply Voltage VDD (V) Supply Voltage VDD (V) VOLTAGE GAIN vs. FREQUENCY 10 Total Harmonic Distortion THD (%) TOTAL HARMONIC DISTORTION vs. OUTPUT VOLTAGE 10 Voltage Gain GV (dB) 8 6 1 4 VDD = 1.5 V Cin = 3 pF RL = 2.2 kΩ Vin = 10 mV 2 0 10 100 1 000 10 000 100 000 0.1 10 VDD = 1.5 V Cin = 3 pF RL = 2.2 kΩ f = 1 kHz 100 Output Voltage Vout (mV) 1 000 Frequency f (Hz) VOLTAGE GAIN vs. INPUT CAPACITANCE 10 Output Noise Voltage NV (dBV) OUTPUT NOISE VOLTAGE vs. INPUT CAPACITANCE –95 VDD = 1.5 V RL = 2.2 kΩ Vin = 0 V Voltage Gain GV (dB) 8 6 –100 4 VDD = 1.5 V RL = 2.2 kΩ Vin = 10 mV f = 1 kHz 1 2 3 4 5 6 2 0 –105 1 2 3 4 5 6 Input Capacitance Cin (pF) Input Capacitance Cin (pF) Remark The graphs indicate nominal characteristics. Data Sheet PU10776EJ01V0DS 3 μPD5747T6J PACKAGE DIMENSIONS 3-PIN THIN-TYPE LEAD-LESS MINIMOLD (UNIT: mm) 0.15+0.1 –0.05 1.2±0.1 1.0±0.1 0.30+0.1 –0.05 (Bottom View) (0.8) 6X 1.2±0.05 1 (0.8) 3 2 0.15+0.1 –0.05 (0.2) 0.11+0.1 –0.05 (0.2) MAX. 0.33 PIN CONNECTIONS 1. OUT 2. IN 3. GND Remark ( ) : Reference value 4 Data Sheet PU10776EJ01V0DS μPD5747T6J RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10776EJ01V0DS 5 μPD5747T6J • T he information in this document is current as of July, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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