UPG101P

DATA SHEET DATA SHEET GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. available in chip form. Both devices are PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the IF stage of microwave communication system and the measurement equipment. FEATURES • Wide band : f = 50 MHz to 3 GHz ORDERING INFORMATION PART NUMBER FORM chip chip PPG100P PPG101P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PPG100P Drain Voltage Gate Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VGG Vin Pin Ptot *1 *2 PPG101P +10 ð8 ð5 to +0.6 +15 1.5 ð65 to +125 ð65 to +175 V V V dBm W °C °C +8 ð8 ð3 to +0.6 +15 1.5 ð65 to +125 ð65 to +175 Topr Tstg *1 Mounted with AuSn hard solder *2 The temperature of base material baside the chip Document No. P12402EJ2V0DS00 (2nd edition) (Previous No. IC-3144) Date Published February 1997 N Printed in Japan © 1992 PPG100P, PPG101P ELECTRICAL CHARACTERISTICS (TA = 25 °C) PPG100P (VDD = +5 V, VGG = ð5 V) CHARACTERISTICS Drain Current Gate Current Power Gain Gain Flatness Noise Figure Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD IGG Gp 14 MIN. 30 TYP. 45 0.7 16 r1.5 2.7 7 7 30 +3 10 10 40 +6 3.5 MAX. 60 1.5 UNIT mA mA dB dB dB dB dB dB dBm f = 0.05 to 3 GHz RF OFF TEST CONDITIONS *3 'Gp NF RLin RLout ISOL PO(1 dB) PPG101P (VDD = +8 V, VGG = ð5 V) CHARACTERISTICS Drain Current Gate Current Power Gain Gain Flatness Noise Figure Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD IGG Gp 12 MIN. 70 TYP. 100 1.0 14 r1.5 5 6 6 30 +16 8 8 40 +18 7 MAX. 140 3.0 UNIT mA mA dB dB dB dB dB dB dBm f = 0.05 to 3 GHz RF OFF TEST CONDITIONS 'Gp NF RLin RLout ISOL PO(1 dB) *3 These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1. 2 PPG100P, PPG101P Fig. 1 8 Pin Ceramic Package 1.27±0.1 1.27±0.1 4–0.6 4 3 4–0.4 2 5 1 6 7 3.8±0.2 8 10.6 MAX. 1.7 MAX. 0.2–0.02 +0.05 3 PPG100P, PPG101P TYPICAL CHARACTERISTICS PPG100P (VDD = +5 V, VGG = ð5 V) POWER GAIN AND NOISE FIGURE vs. FREQUENCY TA = –25 °C TA = +25 °C TA = +75 °C *4 INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY 0 10 NF – Noise Figure – dB RL - Return Loss - dB 10 RLout 20 Gp - Power Gain - dB Gp 20 RLin 10 5 NF 30 0 10 20 50 100 200 500 1000 2000 5000 40 10 20 50 100 200 500 1000 2000 5000 f - Frequency - MHz f - Frequency - MHz ISOLATION vs. FREQUENCY 10 +10 OUTPUT POWER vs. INPUT POWER f = 1 GHz f = 2 GHz f = 3 GHz ISOL - Isolation - dB 20 30 PO - Output Power - dBm 0 40 50 10 20 –10 50 100 200 500 1000 2000 5000 –20 –10 Pi - Input Power - dBm 0 f - Frequency - MHz 4 PPG100P, PPG101P PPG101P (VDD = +8 V, VGG = ð5 V) POWER GAIN AND NOISE FIGURE vs. FREQUENCY 20 TA = –25 °C TA = +25 °C TA = +75 °C Gp INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY 10 0 NF - Noise Figure - dB RL - Return Loss - dB Gp - Power Gain - dB 10 RLin 20 RLout 30 10 NF 5 0 10 20 50 100 200 0 500 1000 2000 5000 40 10 20 50 100 200 500 1000 2000 5000 f - Frequency - MHz f - Frequency - MHz ISOLATION vs. FREQUENCY 10 20 PO - Output Power - dBm OUTPUT POWER vs. INPUT POWER f = 1 GHz f = 2 GHz f = 3 GHz 20 ISOL - Isolation - dB 30 10 40 50 60 10 20 0 50 100 200 500 1000 2000 5000 –10 0 Pi - Input Power - dBm 10 f - Frequency - MHz *4 These characteristics are measured for device mounted in the standard package shown in Fig. 1. 5 PPG100P, PPG101P CHIP DIMENSIONS (Unit : mm) PPG100P 10 9 8 1 7 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: IN GND GND VGG GND GND OUT GND VDD GND 2 3 4 5 6 1.3 Bonding Pad Size: 100 µm × 100 µ m PPG101P 10 9 8 1.0 1 7 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: IN GND GND VGG GND GND OUT GND VDD GND 2 3 4 5 6 1.3 Bonding Pad Size: 100 µm ∞ 100 µ m 6 1.0 PPG100P, PPG101P RECOMMENDED CHIP ASSEMBLY CONDITIONS Die Attachment Atmosphere Temperature AuSn Preform : N2 gas : 320 r5 °C : 0.5 u 0.5 u 0.05 (mm), 2 pcs. t * The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Base Material : CuW, Cu, KV * Other material should not be used. Epoxy Die Attach is not recommended. Bonding Machine Wire Temperature Strength Atmosphere : TCB * USB is not recommended : 30 Pm diameter Au wire : 260 r5 °C : 31 r3 g : N2 gas QUALITY ASSURANCE (Refer to GET-30116) 1. 100 % Tests 1-1 100 % DC and RF Probe 1-2 Visual Inspection MIL-STD-883/Method 2010 Condition B 2. Tests on Sampling Basis 2-1 Bond Pull Tests (In case of recommended chip handling) MIL-STD-883 Method 2011 5 samples/wafer and 20 points tested Accept 0/Reject 1 2-2 Tests in Standard Package Test the electrical characteristics of chips assembled into the standard package used for PPG100B and PPG101B. 5 samples/wafer tested DC and RF measurement Accept 1/Reject 2 3. WARRANTEE NEC has a responsibility of quality assurance for the products within 180 days after delivered to customers where these are handled properly and stored in the desicater with the flow of dry N2 gas. 4. CAUTION 4-1 Take great care to prevent static electricity. 4-2 Be sure that Die Attach is performed in N2 atmosphere. 7 PPG100P, PPG101P No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5