UPG2010TB

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2010TB L-BAND SPDT SWITCH DESCRIPTION The µPG2010TB is GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Supply voltage • Switch control voltage • Low insertion loss : VDD = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) : LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS3 = 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value) • High isolation • High power : ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value) : Pin (0.1 dB) = +33.0 dBm TYP. @ f = 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATIONS • L-band digital cellular or cordless telephone • PCS, W-LAN, WLL and BluetoothTM etc. ORDERING INFORMATION Part Number Package 6-pin super minimold Marking G2Y Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel µPG2010TB-E3 Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2010TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10317EJ02V0DS (2nd edition) Date Published October 2003 CP(K) Printed in Japan The mark shows major revised points.  NEC Compound Semiconductor Devices 2003 µPG2010TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 3 2 1 43 52 61 (Top View) 44 55 66 (Bottom View) 3 2 1 Pin No. 1 Pin Name OUTPUT1 GND OUTPUT2 Vcont INPUT VDD G2Y 2 3 4 5 6 TRUTH TABLE Vcont Low High INPUT−OUTPUT1 ON OFF INPUT−OUTPUT2 OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Supply Voltage Switch Control Voltage Input Power Power Dissipation Operating Ambient Temperature Storage Temperature Symbol VDD Vcont Pin PD TA Tstg Ratings 6.0 6.0 +36 150 Note Unit V V dBm mW °C °C −45 to +85 −55 to +150 Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Supply Voltage Switch Control Voltage (H) Switch Control Voltage (L) Symbol VDD Vcont (H) Vcont (L) MIN. 2.7 2.7 −0.2 TYP. 2.8 2.8 0 MAX. 3.0 3.0 0.2 Unit V V V 2 Data Sheet PG10317EJ02V0DS µPG2010TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Insertion Loss 1 Insertion Loss 2 Isolation 1 Input Return Loss Output Return Loss 0.1 dB Gain Compression Input Power Note Symbol LINS1 LINS2 ISL1 RLin RLout Pin (0.1 dB) Test Conditions f = 0.5 to 1.0 GHz f = 2.0 GHz f = 0.5 to 2.0 GHz f = 0.5 to 2.5 GHz f = 0.5 to 2.5 GHz f = 1.0 GHz MIN. − − 24 15 15 +31.5 TYP. 0.25 0.30 28 20 20 +33.0 MAX. 0.45 0.50 − − − − − − 100 20 Unit dB dB dB dB dB dBm 2nd Harmonics 3rd Harmonics Supply Current Switch Control Current 2f0 3f0 IDD Icont f = 1.0 GHz, Pin = +30.5 dBm f = 1.0 GHz, Pin = +30.5 dBm 65 65 − − 75 75 50 4 dBc dBc µA µA Note Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Insertion Loss 3 Isolation 2 Switch Control Speed Symbol LINS3 ISL2 tSW Test Conditions f = 2.5 GHz f = 2.5 GHz MIN. − − − TYP. 0.35 25 1 MAX. − − − Unit dB dB µs Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF. Data Sheet PG10317EJ02V0DS 3 µPG2010TB EVALUATION CIRCUIT (VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF) OUTPUT1 OUTPUT2 56 pF 56 pF 1 2 3 6 5 4 1 000 pF 56 pF 1 000 pF VDD INPUT Vcont The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10317EJ02V0DS µPG2010TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD VDD 6Pin SMM SPDT SW VC 1 OUTPUT1 OUT 1 C 5 C2 C 1 C1 G2Y INPUT C1 IN C3 C1 C C 4 2 C2 OUT 2 OUTPUT2 VC 2 Vcont USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 56 pF 1 000 pF Data Sheet PG10317EJ02V0DS 5 µPG2010TB TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified) INPUT–OUTPUT1 INSERTION LOSS vs. FREQUENCY 0.4 0.3 Insertion Loss LINS (dB) Insertion Loss LINS (dB) INPUT–OUTPUT2 INSERTION LOSS vs. FREQUENCY 0.4 0.3 0.2 0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 0.2 0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) INPUT–OUTPUT1 ISOLATION vs. FREQUENCY 50 40 30 Isolation ISL (dB) INPUT–OUTPUT2 ISOLATION vs. FREQUENCY 50 40 30 Isolation ISL (dB) 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) INPUT–OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY 50 40 Input Return Loss RLin (dB) Input Return Loss RLin (dB) INPUT–OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY 50 40 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10317EJ02V0DS µPG2010TB INPUT–OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY 50 Output Return Loss RLout (dB) Output Return Loss RLout (dB) INPUT–OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY 50 40 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 40 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) +45 +40 Output Power Pout (dBm) 2nd Harmonics 2f0, 3rd Harmonics 3f0 (dBc) OUTPUT POWER vs. INPUT POWER f = 1.0 GHz 2ND HARMONICS, 3RD HARMONICS vs. INPUT POWER –50 f = 1.0 GHz –55 –60 –65 –70 –75 2f0 –80 –85 –90 +10 +15 +20 +25 3f0 +30 +35 +40 +35 +30 +25 +20 +15 +10 +5 +10 +15 +20 +25 +30 +35 +40 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PG10317EJ02V0DS 7 µPG2010TB PACKAGE DIMENSIONS 6-PIN SUPTER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 8 Data Sheet PG10317EJ02V0DS 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 µPG2010TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 VP215 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10317EJ02V0DS 9 µPG2010TB Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PG10317EJ02V0DS µPG2010TB Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@csd-nec.com (sales and general) techinfo@csd-nec.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0307