UPG2106

PRELIMINARY DATA SHEET µPG2106TB, µPG2110TB L-BAND PA DRIVER AMPLIFIER GaAs INTEGRATED CIRCUIT DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is for 800 MHz band application, and the µPG2110TB is for 1.5 GHz band application. FEATURES • • • • • • : VDD1 = VDD2 = 3.0 V : 889 to 960 MHz, 1429 to 1453 MHz@Pout = +8 dBm : Padj1 = −60 dBc TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V External input and output matching Low operation current : IDD = 25 mA TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V External input and output matching Variable gain control function : ∆G = 40 dB TYP. @VAGC = 0.5 to 2.5 V External input and output matching 6-pin super minimold package Low operation voltage fRF Low distortion APPLICATION • Digital Cellular : PDC, IS-136 etc. ORDERING INFORMATION (PLAN) Part Number Package 6-pin super minimold Supplying Form Carrier tape width is 8 mm. Qty 3 kp/reel. µPG2106TB-E3 µPG2110TB-E3 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG2106TB, µPG2110TB) ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Supply Voltage AGC Control Voltage Input Power Total Power Dissipation Operating Ambient Temperature Storage Temperature Symbol VDD1, VDD2 VAGC Pin Ptot TA Tstg Ratings 6.0 6.0 −8 140 Note Unit V V dBm mW °C °C −30 to +90 −35 to +150 Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85 °C Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs HJ-FET. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14318EJ1V0DS00 (1st edition) Date Published October 1999 N CP(K) Printed in Japan © 1999 µPG2106TB, µPG2110TB [µPG2106TB] PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. 1 2 3 Connection VDD1 GND VDD2 & OUT Pin No. 4 5 6 Connection VAGC GND IN 1 2 3 G1V 6 5 4 Top View 3 2 1 4 5 6 4 5 6 Bottom View 3 2 1 3 2 1 Top View 4 5 6 RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Supply Voltage Input Power AGC Control Voltage Symbol VDD1, VDD2 Pin VAGC MIN. +2.7 − 0 TYP. +3.0 −18 − MAX. +3.3 −10 2.5 Unit V dBm V ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VDD1 = VDD2 = +3.0 V, π /4DQPSK modulated signal input, External input and output matching) Parameter Operating Frequency Power Gain Total Current Adjacent Channel Power Leakage 1 Adjacent Channel Power Leakage 2 Variable Gain Range AGC Control Current Symbol f Gp IDD Padj1 Pin = −18 dBm, VAGC = 2.5 V Pout = +8 dBm, VAGC = 2.5 V Pout = +8 dBm, VAGC = 2.5 V ∆f = ±50 kHz, 21 kHz Band Width Pout = +8 dBm, VAGC = 2.5 V ∆f = ±100 kHz, 21 kHz Band Width Pin = −18 dBm, VAGC = 0.5 to 2.5 V VAGC = 0.5 to 2.5 V Test Conditions MIN. 889 26 − − − TYP. − 30 25 −60 −70 MAX. 960 − 35 −55 −65 − 500 Unit MHz dB mA dBc Padj2 ∆G IAGC 35 − 40 200 dB µA 2 Preliminary Data Sheet P14318EJ1V0DS00 µPG2106TB, µPG2110TB [µPG2110TB] PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 1 2 3 Pin No. 1 2 3 Connection VDD1 GND VDD2 & OUT Pin No. 4 5 6 Connection VAGC GND IN 6 G1Y 5 4 Top View 3 2 1 4 5 6 4 5 6 Bottom View 3 2 1 3 2 1 Top View 4 5 6 RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Supply Voltage Input Power AGC Control Voltage Symbol VDD1, VDD2 Pin VAGC MIN. +2.7 − 0 TYP. +3.0 −18 − MAX. +3.3 −10 2.5 Unit V dBm V ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VDD1 = VDD2 = +3.0 V, π /4DQPSK modulated signal input, External input and output matching) Parameter Operating Frequency Power Gain Total Current Adjacent Channel Power Leakage 1 Adjacent Channel Power Leakage 2 Variable Gain Range AGC Control Current Symbol f Gp IDD Padj1 Pin = −18 dBm, VAGC = 2.5 V Pout = +8 dBm, VAGC = 2.5 V Pout = +8 dBm, VAGC = 2.5 V ∆f = ±50 kHz, 21 kHz Band Width Pout = +8 dBm, VAGC = 2.5 V ∆f = ±100 kHz, 21 kHz Band Width Pin = −18 dBm, VAGC = 0.5 to 2.5 V VAGC = 0.5 to 2.5 V Test Conditions MIN. 1429 24 − − − TYP. − 27 25 −60 −70 MAX. 1453 − 35 −55 −65 − 500 Unit MHz dB mA dBc Padj2 ∆G IAGC 35 − 40 200 dB µA Preliminary Data Sheet P14318EJ1V0DS00 3 µPG2106TB, µPG2110TB [µPG2106TB] EVALUATION CIRCUIT (Preliminary) VDD1 = VDD2 = +3.0 V, f = 925 MHz VDD1 VDD2 C3 L2 C1 L1 OUT C2 1 2 3 G1V 6 L4 C5 5 4 R1 VAGC IN L3 C4 Using the NEC Evaluation Board (Preliminary) Symbol C1, C3 C2 C4 C5 L1 L2 L3 L4 R1 Value 1 000 pF 100 pF 27 pF 2 pF 10 nH 39 nH 27 nH 33 nH 1 kΩ 4 Preliminary Data Sheet P14318EJ1V0DS00 µPG2106TB, µPG2110TB [µPG2106TB] EVALUATION BOARD Epoxy glass: ε = 4.6, t = 0.4 mm, Board Dimension: 38 × 40 mm VDD1 RF OUT Vdd1 OUT C2 C1 L1 L2 C3 VDD2 C5 L4 IN LO IN C4 L3 RF IN Vdd2 VAGC R1 Preliminary Data Sheet P14318EJ1V0DS00 5 µPG2106TB, µPG2110TB [µPG2110TB] EVALUATION CIRCUIT (Preliminary) VDD1 = VDD2 = +3.0 V, f = 1441 MHz VDD1 VDD2 C3 L1 C1 C6 OUT C2 1 2 3 G1Y 6 L3 C5 5 4 R1 VAGC IN L2 C4 Using the NEC Evaluation Board (Preliminary) Symbol C1, C3, C5 C2 C4 C6 L1 L2, L3 R1 Value 1 000 pF 1.5 pF 3 pF 2 pF 2.7 nH 8.2 nH 1 kΩ 6 Preliminary Data Sheet P14318EJ1V0DS00 µPG2106TB, µPG2110TB [µPG2110TB] EVALUATION BOARD Polyimide: ε = 4.6, t = 0.4 mm, Board Dimension: 38 × 40 mm VDD1 Vdd1 21-091667_1 OUT Vdd2 VDD2 C1 L1 C6 C3 C2 OUT C4 L2 IN C5 L3 R1 IN Vagc NEC AGC AMP VAGC Preliminary Data Sheet P14318EJ1V0DS00 7 µPG2106TB, µPG2110TB TYPICAL CHARACTERISTICS [µPG2106TB] Adjacent Channel Power Leakage1 Padj1@∆ f = ±50 kHz (dBc) OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER 45 f = 925 MHz, VDD1 = VDD2 = 3.0 V VAGC = 2.5 V 40 π/4DQPSK signal input 35 30 25 20 15 10 5 0 −5 −35 −30 −25 −20 Input Power Pin (dBm) −15 −10 Padj1 Pout IDD 30 20 10 0 −10 −20 −30 −40 −50 −60 −70 −5 Output Power Pout (dBm), Total Current IDD (mA) GAIN vs. AGC CONTROL VOLTAGE 40 f = 925 MHz, VDD1 = VDD2 = 3.0 V Vector Network Analyzer use 30 20 Gain (dB) 10 0 −10 −20 −30 0 0.5 1 1.5 2 AGC Control Voltage VAGC (V) 2.5 3 8 Preliminary Data Sheet P14318EJ1V0DS00 µPG2106TB, µPG2110TB [µPG2110TB] Adjacent Channel Power Leakage1 Padj1@∆ f = ±50 kHz (dBc) OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER 30 0 −10 −20 −30 Pout 10 Padj1 5 −50 −60 −70 −40 Output Power Pout (dBm), Total Current IDD (mA) 25 IDD 20 15 0 −5 −35 f = 1441 MHz, VDD1 = VDD2 = 3.0 V, VAGC = 2.5 V π/4DQPSK signal input −30 −25 −20 −15 Input Power Pin (dBm) −10 −5 0 GAIN vs. AGC CONTROL VOLTAGE 40 f = 1441 MHz, VDD1 = VDD2 = 3.0 V Vector Network Analyzer use 30 20 Gain (dB) 10 0 −10 −20 −30 0 0.5 1 1.5 2 AGC Control Voltage VAGC (V) 2.5 3 Preliminary Data Sheet P14318EJ1V0DS00 9 µPG2106TB, µPG2110TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.2 +0.1 −0 0.1 MIN. 0.15 +0.1 −0 1.25±0.1 2.1±0.1 0 to 0.1 0.65 1.3 0.65 0.7 0.9±0.1 2.0±0.2 10 Preliminary Data Sheet P14318EJ1V0DS00 µPG2106TB, µPG2110TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit: None Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit: None Recommended Condition Symbol IR35-00-3 VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Preliminary Data Sheet P14318EJ1V0DS00 11 µPG2106TB, µPG2110TB CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8