UPG2134TB

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2134TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Operation frequency • Supply voltage • Circuit current • Power gain • Gain control range • Low distortion : fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.) : VDD1 = 2.7 to 3.3 V (3.0 V TYP.) : VDD2 = 2.7 to 4.2 V (3.5 V TYP.) : IDD = 28 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm : GP = 28 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm : GCR = 42 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V, Pin = −15 dBm : Padj1 = −60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +10 dBm, f = 1 441 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • Digital Cellular: PDC 1.5 GHz etc. ORDERING INFORMATION Part Number Package 6-pin super minimold Marking G3B Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel µPG2134TB-E3 Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2134TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10194EJ01V0DS (1st edition) Date Published October 2002 CP(K) Printed in Japan © NEC Compound Semiconductor Devices 2002 µPG2134TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name VDD1 GND OUTPUT/VDD2 VAGC GND INPUT (Top View) 3 2 1 4 5 6 3 2 1 (Top View) 4 5 6 4 5 6 (Bottom View) 3 2 1 2 3 4 1 G3B 5 6 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Supply Voltage1, 2 Gain Control Voltage Input Power Power Dissipation Operating Ambient Temperature Storage Temperature Symbol VDD1, 2 VAGC Pin PD TA Tstg Ratings 6.0 6.0 −8 140 Note Unit V V dBm mW °C °C −30 to +90 −35 to +150 Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RENGE (TA = +25°C, unless otherwise specified) Parameter Operating Frequency Supply Voltage1 Supply Voltage2 Gain Control Voltage Input Power Symbol fopt VDD1 VDD2 VAGC Pin MIN. 1 429 2.7 2.7 0 − TYP. 1 441 3.0 3.5 − −15 MAX. 1 453 3.3 4.2 2.5 −10 Unit MHz V V V dBm 2 Data Sheet PG10194EJ01V0DS µPG2134TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD1 = 3.0 V, VDD2 = 3.5 V, π/4DQPSK modulated signal input, with external input and output matching, unless otherwise specified) Parameter Operating Frequency Circuit Current Power Gain Adjacent Channel Power Leakage 1 Symbol fopt IDD GP Padj1 Pin = −15 dBm, VAGC = 2.5 V Pin = −15 dBm, VAGC = 2.5 V Pout = +10 dBm, VAGC = 2.5 V, ∆f = ±50 kHz, 21 kHz Bandwidth Pout = +10 dBm, VAGC = 2.5 V, ∆f = ±100 kHz, 21 kHz Bandwidth Pin = −15 dBm, VAGC = 0.5 to 2.5 V VAGC = 0.5 to 2.5 V Test Conditions MIN. 1 429 − 26 − − TYP. 1 441 28 28 −60 −70 MAX. 1 453 35 − −55 −65 − 20 Unit MHz mA dB dBc Adjacent Channel Power Leakage 2 Padj2 dBc Gain Control Range Gain Control Current GCR IAGC 37 − 42 1 dB µA Data Sheet PG10194EJ01V0DS 3 µPG2134TB EVALUATION CIRCUIT f = 1 441 MHz, VDD1 = 3.0 V, VDD2 = 3.5 V OUTPUT 3 pF 1 nH VDD2 10 000 pF 1 000 pF 2 5 3 4 2 pF 1 kΩ VAGC 2.2 nH VDD1 1 000 pF 1 6 100 pF 8.2 nH INPUT 6.8 nH The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10194EJ01V0DS µPG2134TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vdd1 Vdd2 C3 C1 L2 L1 C 2 C6 OUT IN L3 C 5 C4 L4 R1 AGC AMP USING THE NEC EVALUATION BOARD Symbol C1, C3 C2 C4 C5 C6 L1 L2 L3 L4 R1 Values 1 000 pF 3 pF 2 pF 100 pF 10 000 pF 2.2 nH 1.0 nH 6.8 nH 8.2 nH 1 kΩ Part Number GRM39CH102J25PB GRM39CH030C50PB GRM39CH020C50PB GRM39CH101J50PB GRM39CH103J25PB TFL0816-2N7 TFL0816-1N0 TFL0816-6N8 TFL0816-8N2 RR0816P-102-D Maker muRata muRata muRata muRata muRata Susumu Susumu Susumu Susumu Susumu Vagc Data Sheet PG10194EJ01V0DS 5 µPG2134TB TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) OUTPUT POWER, CIRCUIT CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER +40 f = 1 441 MHz, +35 VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V +30 IDD +25 +20 +15 +10 +5 0 –5 –30 –25 –20 –15 –10 –5 0 Pout Padj1 +20 +10 0 –10 –20 –30 –40 –50 –60 –70 Output Power Pout (dBm), Circuit Current IDD (mA) OUTPUT POWER vs. GAIN CONTROL VOLTAGE +15 Adjacent Channel Power Leakage 1 Padj1@ ∆ f = ±50 kHz (dBc) Output Power Pout (dBm) f = 1 441 MHz, +10 VDD1 = 3.0 V, VDD2 = 3.5 V, Pin = –15 dBm +5 0 –5 –10 –15 –20 –25 –30 –35 0 0.5 1.0 1.5 2.0 2.5 3.0 Input Power Pin (dBm) Gain Control Voltage VAGC (V) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10194EJ01V0DS µPG2134TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 Data Sheet PG10194EJ01V0DS 7 µPG2134TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below Condition Symbol IR260 For soldering VPS VP215 Wave Soldering WS260 Partial Heating HS350 Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10194EJ01V0DS µPG2134TB • The information in this document is current as of October 2002. 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