OE-38GXC58D

OE-38GXC58D

  • 厂商:

    NEL

  • 封装:

  • 描述:

    OE-38GXC58D - HF/UHF OCXO Low Power - Nel Frequency Controls,inc

  • 详情介绍
  • 数据手册
  • 价格&库存
OE-38GXC58D 数据手册
CRYSTAL OSCILLATORS OE-X8GXXXXX Series HF/UHF OCXO Low Power Description: The OE-X8GXXXXX Series of Oven Controlled Crystal Oscillators (OCXO) provides High and Ultra High Frequency with SC-cut stability performance, extremely low phase noise and power consumption, with variety of different output types in a standard 1.4x1” package – “Europack”. Features 0.25 (6,35 mm) Data Sheet 0635D Rev. A 0.50 (12,7 mm) • • • • • • Very Low Power Consumption Very Low Phase Noise Excellent SC-cut Frequency Stability Ultra High Frequency – up to 1 GHz CMOS, Sine-Wave outputs available Stratum3E available 0.70 (17,78 mm) Ø0.030 (0,76 mm) TYP 1.00 (25,40 mm) 3 4 2 1.07 (27,20 mm) 1 5 1.42 (36,1 mm) Creating a Part Number OE – X 8G X X XX X Package Code OE 5 pin 26 x 27mm Temperature Range Supply Voltage Code 5 3 Specification 5V ±5% 3.3V ±5% Code A B C D E F Specification 0°C to 50°C -10°C to 60°C 0°C to 70°C -20°C to 70°C -30°C to 70°C -40°C to 80°C Temperature Stability Code 17 58 28 18 YZ Specification 1x10-7 5x10-8 2x10-8 1x10-8 Yx10-Z OCXO/OCVCXO Option Code X V Specification No V. Control W/ V. Control Output Type Code C S Specification CMOS Sine-wave 357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881 Email: nelsales@nelfc.com www.nelfc.com CRYSTAL OSCILLATORS OE-X8GXXXXX Series HF/UHF OCXO Low Power Specifications Parameter Symb Input Break Down Voltage Storage temp. Contr. Voltage Vcc Ts Vc F CMOS Sine-wave Data Sheet 0635D Rev. A Condition Min Typ Max Unit Note Absolute Maximum Ratings -0.5 -40 -1 30 30 3.135 4.75 3.30 5.0 5.5 85 9 200 1,000 3.465 5.25 90 160 V °C V MHz Electrical Frequency Range Input Voltage Input Current Frequency Stability Vcc Icc ΔF/F vs. Temperature vs. Vcc aging As shipped, 25ºC CMOS Sine @50% 20 to 80 % CMOS CMOS Sinewave Into 50 Ohm 1σ Sine CMOS, Sine Sine-wave @10 Hz @100 Hz @1 KHz @10 KHz @100 KHz @10 Hz @100 Hz @1 KHz @10 KHz @100 KHz V mA Calibration Load Duty cycle Rise/Fall time Logic "1" level Logic "0" level Output power Start up time Phase jitter Subharmonics Spurious Harmonics SSB Phase Noise ΔF/F Tr/Tf Voh Vol P Ts ±50 ppb ±2 ppb/V ±0.1 ppm/year ±0.5 ppm ±0.1 ppm 15pF/10KOhm Internally AC-coupled 50 Ohm 45 50 55 % 3 ns 0.9Vcc V 0.1Vcc V 0 4 3 7 2 0.4 0.2 -45 dBm 10 1 0.4 -40 none -60 -25 ms ps dBc dBc dBc dBc/Hz 3 5 @ 100 MHz, 3.3V @ 622 MHz, 3.3V See chart First Year 15 years CMOS CMOS 3.3V 5.0V 100 Hz to 20 MHz 12 KHz to 20 MHz F>250MHz F< 250 MHz SSB Phase Noise Input Impedance Control voltage Modulation bandwidth Deviation -30 -100 -125 -140 -160 -165 -80 -100 -120 -145 -150 > 10KOhm 0 100 Hz @100 MHz dBc/Hz @622 MHz; Sine Vc MB Vc=0V to 3.3V,25°C 3.3 V Contact Factory for wider MB ±0.5 ±1.0 ppm 357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881 Email: nelsales@nelfc.com www.nelfc.com CRYSTAL OSCILLATORS OE-X8GXXXXX Series HF/UHF OCXO Low Power Data Sheet 0635D Rev. A Environmental and Mechanical 0°C to 70°C , -40°C to 85°C, see chart, page 1 Operating temp. range Per MIL-STD-202, Method 213, Cond. E Mechanical Shock Per MIL-STD-883, Method 1011, Cond. A Thermal Shock Per MIL-STD-883, Method 2007, Cond. A Vibration 260°C for 10 s leads only Soldering Conditions Hermetic Seal Leak rate less than 5x10-8 atm.cc/s of helium Electrical Connections Pin Out Pin #1- Voltage Control ; Pin #2 – Vref ; Pin #3 – Vcc; Pin#4 – Output, CMOS or Sine; Pin#5 - GND 357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881 Email: nelsales@nelfc.com www.nelfc.com
OE-38GXC58D
### 物料型号 - 型号系列:OE-X8GXXXXX Series - 封装:1.4x1英寸“Europack”封装

### 器件简介 - 描述:OE-X8GXXXXX系列的恒温晶体振荡器(OCXO)提供高频和超高频的SC切割稳定性能,极低的相位噪声和功耗,以及多种不同的输出类型。

### 引脚分配 - 引脚配置:5引脚,26x27mm

### 参数特性 - 供电电压:3.3V±5%或5V±5% - 温度范围:0°C至70°C,-20°C至70°C等,具体取决于型号代码 - 频率稳定性:根据温度、Vcc老化等条件,稳定性在±0.1ppm至±2ppm之间 - 负载:CMOS和正弦波负载,15pF/10KOhm内部交流耦合,50欧姆负载 - 占空比:50% - 上升/下降时间:3ns(CMOS) - 逻辑“1”电平:0.9Vcc(CMOS) - 逻辑“0”电平:0.1Vcc(CMOS) - 输出功率:3.3V时0dBm至4dBm,5.0V时3dBm至7dBm - 启动时间:2ms至10ms - 相位抖动:100Hz至20MHz时0.4ps至1ps,12kHz至20MHz时0.2ps至0.4ps - 谐波:-25dBc至-30dBc - SSB相位噪声:@100MHz时-100dBc/Hz至-165dBc/Hz,@622MHz时-80dBc/Hz至-150dBc/Hz

### 功能详解 - 频率范围:CMOS和正弦波输出,30MHz至1GHz - 输入电压:3.135V至5.25V - 输入电流:90μA至160μA(100MHz,3.3V;622MHz,3.3V) - 调制带宽:100Hz,可联系工厂获取更宽的调制带宽

### 应用信息 - 应用:适用于需要高频和超高频稳定性能的应用,如通信系统、导航系统等。

### 封装信息 - 封装类型:1.4x1英寸“Europack”封装 - 密封性:氦气泄漏率小于5x10^-8 atm·cc/s