s
DIODE
FEATURES
Type Type :
20E1 20E1
OUTLINE DRAWING
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 80 1.3 1.7
Approx Net Weight:0.38g 20E1 100 250 Ta=33°C *1 50Hz Half Sine Wave Resistive Load Ta=43°C *2 2.67 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 Unit V V A A A °C °C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 1.7A Min. Typ. Max. *1 *2 10 0.92 105 70 Unit µA V °C/W
Rth(j-a) Junction to Ambient
*1 : Without Fin or P.C. Board *2 : P.C. Board Mounted (L=8mm, Print Land=15 x 15mm,Both Sides)
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20E1 OUTLINE DRAWING (Dimensions in mm)
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