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T y p e : C10T10Q-11A C10T10 C10T10Q
OUTLINE DRAWING
FEATURES FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range
Approx Net Weight: 1.45g
Symbol
VRRM IO IF(RMS) IFSM Tjw Tstg 120 10
C10T10Q-11A
100 50 Hz Full Sine Wave Tc=121°C Resistive Load 11.1 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150
Unit V A A A
°C °C
Electrical • Thermal Characteristics
Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 5 A per arm Min. Typ. Max. 1 0.85 3 Unit mA V °C /W
Rth(j-c) Junction to Case
C_T_ 11A OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
C10T10Q/C10T10Q-11A (per Arm)
20
INSTANTANEOUS FORWARD CURRENT (A)
10
5
2 Tj=25°C Tj=150°C 1
0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
θ
180°
CONDUCTION ANGLE
AVERAGE FORWARD POWER DISSIPATION
C10T10Q/C10T10Q-11A (Total)
AVERAGE FORWARD POWER DISSIPATION (W)
RECT 180°
8
SINE WAVE
6
4
2
0 0 2 4 6 8 10 12
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C 20 C10T10Q/C10T10Q-11A (per Arm)
PEAK REVERSE CURRENT (mA)
10
5
2 0 20 40 60 80 100 120
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
C10T10Q/C10T10Q-11A (Total)
RECT 180°
2.0
AVERAGE REVERSE POWER DISSIPATION (W)
1.6
1.2
SINE WAVE
0.8
0.4
0 0 20 40 60 80 100 120
REVERSE VOLTAGE (V)
0°
θ
180°
CONDUCTION ANGLE
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
V R M= 100V C10T10Q/C10T10Q-11A (Total)
RECT 180°
12
AVERAGE FORWARD CURRENT (A)
10
SINE WAVE
8
6
4
2
0 0 25 50 75 100 125 150
CASE TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load 140 C10T10Q/C10T10Q-11A
120
SURGE FORWARD CURRENT (A)
100
80
60
40
I FSM 0.02s
20
0 0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C10T10Q/C10T10Q-11A (per Arm)
500
JUNCTION CAPACITANCE (pF)
200
100
50
20 0.5 1 2 5 10 20 50 100 200
REVERSE VOLTAGE (V)
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