C10T10Q

SBD T y p e : C10T10Q C10T10 C10T10Q OUTLINE DRAWING FEATURES FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 120 10 C10T10Q 100 50 Hz Full Sine Wave Tc=121°C Resistive Load 11.1 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 5 A Per arm Min. Typ. Max. 1 0.85 3 Unit mA V °C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C10T10Q/C10T10Q-11A (per Arm) 20 INSTANTANEOUS FORWARD CURRENT (A) 10 5 2 Tj=25°C Tj=150°C 1 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C10T10Q/C10T10Q-11A (Total) AVERAGE FORWARD POWER DISSIPATION (W) RECT 180° 8 SINE WAVE 6 4 2 0 0 2 4 6 8 10 12 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C 20 C10T10Q/C10T10Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 10 5 2 0 20 40 60 80 100 120 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C10T10Q/C10T10Q-11A (Total) RECT 180° 2.0 AVERAGE REVERSE POWER DISSIPATION (W) 1.6 1.2 SINE WAVE 0.8 0.4 0 0 20 40 60 80 100 120 REVERSE VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V R M= 100V C10T10Q/C10T10Q-11A (Total) RECT 180° 12 AVERAGE FORWARD CURRENT (A) 10 SINE WAVE 8 6 4 2 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 140 C10T10Q/C10T10Q-11A 120 SURGE FORWARD CURRENT (A) 100 80 60 40 I FSM 0.02s 20 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C10T10Q/C10T10Q-11A (per Arm) 500 JUNCTION CAPACITANCE (pF) 200 100 50 20 0.5 1 2 5 10 20 50 100 200 REVERSE VOLTAGE (V)