C20T06Q

SBD T y p e : C20T06Q OUTLINE DRAWING FEATURES FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 150 20 C20T06Q 60 50 Hz Full Sine Wave Tc=111°C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 10 A per arm Min. Typ. Max. 10 0.65 1.5 Unit mA V °C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C20T06Q/C20T06Q-11A (per Arm) 50 INSTANTANEOUS FORWARD CURRENT (A) 20 Tj=25°C Tj=150°C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C20T06Q/C20T06Q-11A (Total) AVERAGE FORWARD POWER DISSIPATION (W) RECT 180° 16 SINE WAVE 12 8 4 0 0 4 8 12 16 20 24 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C 500 C20T06Q/C20T06Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 200 100 50 0 10 20 30 40 50 60 70 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C20T06Q/C20T06Q-11A (Total) RECT 180° 20 AVERAGE REVERSE POWER DISSIPATION (W) 16 12 SINE WAVE 8 4 0 0 10 20 30 40 50 60 70 REVERSE VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =60 V C20T06Q/C20T06Q-11A (Total) RECT 180°. 24 AVERAGE FORWARD CURRENT (A) 20 SINE WAVE. 16 12 8 4 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 160 140 C20T06Q/C20T06Q-11A SURGE FORWARD CURRENT (A) 120 100 80 60 40 20 0.02s I FSM 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C20T06Q/C20T06Q-11A (per Arm) 2000 JUNCTION CAPACITANCE (pF) 1000 500 200 100 0.5 1 2 5 10 20 50 100 REVERSE VOLTAGE (V)