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C20T10Q-11A

C20T10Q-11A

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    C20T10Q-11A - Schottky Barrier Diode - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
C20T10Q-11A 数据手册
SBD 20T10Q T y p e : C20T10Q-11A OUTLINE DRAWING FEATURES FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.45g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 180 20 C20T10Q-11A 100 50 Hz Full Sine Wave Tc=120°C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 10 A per arm Min. Typ. Max. 1 0.88 1.5 Unit mA V °C /W Rth(j-c) Junction to Case C20T10Q-11A OUTLINE DRAWING (Dimentions in mm)
C20T10Q-11A 价格&库存

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