C30T10Q

SBD T y p e : C30T10Q 30T10Q OUTLINE DRAWING FEATURES FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 250 30 C30T10Q 100 50 Hz Full Sine Wave Tc=105°C Resistive Load 33.3 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 15 A per arm Min. Typ. Max. 2 0.88 1.5 Unit mA V °C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C30T10Q/C30T10Q-11A (per Arm) 100 INSTANTANEOUS FORWARD CURRENT (A) 50 20 Tj=25°C Tj=150°C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C30T10Q/C30T10Q-11A (Total) RECT 180° SINE WAVE 30 AVERAGE FORWARD POWER DISSIPATION (W) 25 20 15 10 5 0 0 5 10 15 20 25 30 35 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C 50 C30T10Q/C30T10Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 20 10 0 20 40 60 80 100 120 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C30T10Q/C30T10Q-11A (Total) RECT 180° 5 AVERAGE REVERSE POWER DISSIPATION (W) 4 3 SINE WAVE 2 1 0 0 20 40 60 80 100 120 REVERSE VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V R M= 100V C30T10Q/C30T10Q-11A (Total) RECT 180° SINE WAVE 35 AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 300 C30T10Q/C30T10Q-11A SURGE FORWARD CURRENT (A) 250 200 150 100 50 0.02s I FSM 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C30T10Q/C30T10Q-11A (per Arm) 1000 JUNCTION CAPACITANCE (pF) 500 200 100 50 0.5 1 2 5 10 20 50 100 200 REVERSE VOLTAGE (V)