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FCH20B04

FCH20B04

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    FCH20B04 - Schottky Barrier Diode - Nihon Inter Electronics Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
FCH20B04 数据手册
SBD T y p e : FCH20B04 FCH20B FCH20B04 OUTLINE DRAWING FEATURES FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.75g Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg Ftor Symbol IRM FCH20B04 40 45(pulse width ≤ 1µs duty ≤ 1/50) 50 Hz Full Sine Wave 20 Tc=113°C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle 180 Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.5 Conditions Min. Typ. Max. 1 0.65 2.3 1.5 Unit V V A A A °C °C N•m Unit mA V °C /W °C /W Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Tj= 25°C, VRM= VRRM per Arm Tj= 25°C, IFM= 10 A VFM per Arm Rth(j-c) Junction to Case Rth(c-f) Cace to Fin FCH_B_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE FCH20B04 (per Arm) 50 INSTANTANEOUS FORWARD CURRENT (A) 20 Tj=25°C Tj=150°C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION FCH20B04 (Total) AVERAGE FORWARD POWER DISSIPATION (W) 16 RECT 180° SINE WAVE 12 8 4 0 0 4 8 12 16 20 24 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C 50 FCH20B04 (per Arm) PEAK REVERSE CURRENT (mA) 20 10 5 0 10 20 30 40 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION FCH20B04 (Total) 1.4 AVERAGE REVERSE POWER DISSIPATION (W) 1.2 RECT 180° 1.0 0.8 SINE WAVE 0.6 0.4 0.2 0 0 10 20 30 40 REVERSE VOLTAGE (V) 0° θ 180° CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =40 V FCH20B04 (Total) RECT 180° 24 AVERAGE FORWARD CURRENT (A) 20 SINE WAVE 16 12 8 4 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 200 FCH20B04 SURGE FORWARD CURRENT (A) 160 120 80 40 I FSM 0.02s 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue 1000 FCH20B04 (per Arm) JUNCTION CAPACITANCE (pF) 500 200 100 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V)
FCH20B04
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于工业控制、消费电子等领域。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考芯片手册。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB至512KB的闪存和20KB的SRAM。

5. 功能详解:包括GPIO、定时器、ADC、通信接口(如UART、SPI、I2C)等模块的详细功能描述。

6. 应用信息:适用于需要高性能处理和丰富外设接口的应用场景,如电机控制、工业自动化等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm,适用于表面贴装技术。
FCH20B04 价格&库存

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