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GCQ10A06

GCQ10A06

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    GCQ10A06 - Schottky Barrier Diode - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
GCQ10A06 数据手册
SBD T y p e : GCQ10A06 Q10A OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.9g Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg Ftor 110 10 GCQ10A06 60 65 50 Hz Full Sine Wave Tc=108°C Resistive Load 11.1 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.5 Unit V V A A A °C °C N•m Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM Conditions Min. Typ. Max. 5 0.58 3 Unit mA V °C /W Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 5 A VFM per arm Rth(j-c) Junction to Case GCQ10A06 OUTLINE DRAWING (Dimentions in mm)
GCQ10A06 价格&库存

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