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PAT308

PAT308

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    PAT308 - THYRISTOR MODULE - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
PAT308 数据手册
THYRISTOR MODULE 66A / 800V PAT308 PAH308 OUTLINE DRAWING FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 PAT TYPICAL APPLICATIONS * AC phase control * AC switch PAH Maximum Ratings Parameter Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Approx Net Weight:155g Symbol VDRM VDSM Grade PAT/PAH308 Unit V Max Max Rated Value 800 960 Parameter Parameter RMS On-State Current Surge On-State Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm IT(RMS) IFSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions Conditions 50Hz Half Sine Wave condition Tc=95°C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs • Unit A A A2s A/µs 66 600 1800 100 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2000 V M5 Screw 2.4 to 2.8 N •m M5 Screw 2.4 to 2.8 Electrical • Thermal Characteristics Characteristics Peak Off-State Current Peak On-State Voltage Gate Current to Trigger Symbol IDM VTM IGT Test Conditions VDM= VDRM, Tj=125°C ITM= 90A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 20 1.45 200 100 50 4 2.5 2 0.25 500 100 6 2 4 100 50 0.35 0.1 Unit mA V mA Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1: Value Per Module VGT VGD dv/dt tq V V V/µs µs µs µs µs mA ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=100V, IG=200mA td diG/dt=0.2A/µs tr IL Tj=25°C IH Tj=25°C Rth(j-c) Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound °C/W PAT/PAH308 OUTLINE DRAWING (Dimensions in mm) PAT PAH
PAT308 价格&库存

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