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PBH206

PBH206

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    PBH206 - THYRISTOR MODULE - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
PBH206 数据手册
THYRISTOR MODULE 20A / 300V to 800V PBH203 PBH203 PBH206 PBH208 OUTLINE DRAWING FEATURES * Isolated Base * Thyristors and Diodes H-Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use φ   Maximum Ratings Parameter Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:70g Symbol VDRM VDSM VRRM VRSM Grade PBH203 PBH206 PBH208 Unit V V 300 400 300 400 600 700 600 700 800 960 800 960 Max Max Rated Value Parameter Parameter Average Rectified Output Current Surge On-State Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm IO(AV) ITSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions Conditions 50Hz Half Sine Wave condition Tc=60°C 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=100mA, diG/dt=0.2A/µs • Unit A A A2s A/µs 20 160 128 100 5 W 0.5 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2000 V M5 Screw 2.4 to 2.8 N •m - Electrical • Thermal Characteristics Characteristics Peak Off-State Current Peak Reverse Current Peak Forward Voltage Gate Current to Trigger Symbol IDM IRM VTM IGT Test Conditions VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 30A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=100mA, diG/dt=0.2A/µs Maximum Value. Min. Typ. Max. 5 5 1.63 100 50 25 4 2.5 2 0.25 100 80 6 2 4 70 50 1.01 0.1 Unit mA mA V mA Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1:Value Per Module VGT VGD dv/dt tq tgt td tr IL IH Rth(j-c) V V V/µs µs µs µs µs mA Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound °C/W PBH20x OUTLINE DRAWING (Dimensions in mm) φ  
PBH206 价格&库存

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