THYRISTOR MODULE
30A / 800V
PBH308AC PBH308AC
OUTLINE DRAWING
FEATURES
* Isolated Base * Thyristors and Diodes H-Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter Parameter
Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage
Approx Net Weight:70g
Symbol VDRM VDSM VRRM VRSM
Grade
PBH308AC
Unit
V V
Max Max Rated Value
800 960 800 960
Parameter Parameter
Average Rectified Output Current Surge On-State Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Gate Terminals Treatment Force Value per 1 Arm IO(AV) ITSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Ftor
Conditions Conditions
50Hz Half Sine Wave condition Tc=94°C 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs
•
Unit
A A A2s A/µs
30 600 1800 100
5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V Greased M4 Screw 0.9 to 1.6 N •m M4 Screw 1.3 to 1.9 Insertion/Pulling out 45/32 N
Electrical • Thermal Characteristics
Characteristics
Peak Off-State Current Peak Reverse Current Peak Forward Voltage Gate Current to Trigger Symbol IDM IRM VTM IGT Test Conditions VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 90A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Maximum Value. Min. Typ. Max. 10 10 1.45 200 100 50 4 2.5 2 0.25 500 100 6 2 4 100 50 0.44 0.1 Unit mA mA V mA
Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1:Value Per Module
VGT VGD dv/dt tq tgt td tr IL IH Rth(j-c)
V V V/µs µs µs µs µs mA
Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound
°C/W
PBH308AC OUTLINE DRAWING (Dimensions in mm)
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