PBMB200A6

IGBT MODULE MODULE CIRCUIT H-Bridge 200A 600V OUTLINE DRAWING PBMB200A6 PBMB200A6 8- fasten- tab No 110 Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PBMB200A6 600 +/ - 20 200 400 780 -40 to +150 -40 to +125 2500 3 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 3.6 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 20,000 0.15 0.25 0.2 0.45 Max. 2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 200 400 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=200A/µs Min. - Max. 2.4 0.25 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.16 0.38 PBMB200A6 Fig.1- Output Characteristics (Typical) 400 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ I C=80A 400A V GE =20V 12V Collector to Emitter Voltage V CE ( V) 15V 10V 14 200A 12 10 8 6 4 2 0 Collector Current I C ( A) 300 200 9V 100 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE ( V) Gate to Emitter Voltage V GE ( V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 300 250 200 16 TC=125 ℃ I C=80A 400A Collector to Emitter Voltage V CE ( V) 200A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE ( V) 14 RL=1.5 Ω TC=25 ℃ 14 Gate to Emitter Voltage V GE (V) 12 10 8 VCE=300V 150 6 200V 100 50 0 0 150 300 450 600 750 900 100V 4 2 0 0 4 8 12 16 20 Gate to Emitter Voltage V GE ( V) Total Gate Charge Qg ( nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 20000 Fig.6- Collector Current vs. Switching Time (Typical) 1 0.9 0.8 Cies Coes Cres VGE =0V f=1MHZ TC=25 ℃ VCC=300V R G=3.6 Ω VGE = ± 15V TC=25 ℃ Switching Time t ( μ s) Capacitance C (pF) 10000 5000 2000 1000 500 200 100 0.2 0.5 1 2 5 10 20 50 100 200 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 toff ton tf tr 200 Collector to Emitter Voltage V CE (V) Collector Current IC ( A) PBMB200A6 Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) 400 2 V CC=300V I C=200A V G= ± 15V TC=25 ℃ TC=25 ℃ 350 TC=125 ℃ toff ton tr 300 1 Forward Current I F ( A) Switching Time t (μ s) 250 200 150 100 50 0 0.5 tf 0.2 0.1 0.05 1 10 100 0 1 2 3 4 Series Gate Impedance R G (Ω ) Forward Voltage V F ( V) Fig.9- Reverse Recovery Characteristics (Typical) 500 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 500 200 Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr ( ns) IF=200A TC=25 ℃ trr R G=3.6 Ω V GE = ± 15V TC≦ 125 ℃ 200 Collector Current I C ( A) 100 50 20 10 5 2 1 0.5 0.2 100 50 20 IRrM 10 5 0 200 400 600 800 1000 1200 0.1 0 200 400 600 800 -di/dt ( A/μ s) Collector to Emitter Voltage V CE ( V) Fig.11- Transient Thermal Impedance 5x10 -1 ( ℃ /W) FRD 2x10 -1 1x10 -1 5x10 -2 IGBT Transient Thermal Impedance Rth (J-C) 2x10 -2 1x10 -2 5x10 -3 TC=25 ℃ 2x10 -3 1x10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 1 Shot Pulse 1 10 1 Time t ( s)