IGBT IGBT Module−Chopper
□ 回 路 図 : CIRCUIT CIRCUIT
100 A,600V
PCHMB100A6A PCHMB100A6A
Dimension:[mm]
□ 外 形 寸 法 図 : OUTLINE DRAWING OUTLINE DRAWING
□
最 大 定 格 : MAXIMUM MAXIMUM Item コレクタ・エミッタ間電圧
Collector-Emitter Voltage
RATINGS (TC=25℃)
Symbol VCES VGES
DC 1ms
重量:220g
Rated Value 600 ±20 100 200 400 −40∼+150 −40∼+125 2,500 2(20.4)
Unit V V A W ℃ ℃ V(RMS) N・m
(kgf・cm)
ゲート・エミッタ間電圧
Gate-Emitter Voltage
コ コ 接 保 絶
レ レ
ク ク 合 存 縁
タ タ 温 温 耐
電 損
流 失 度 度
Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range
IC ICP PC Tj Tstg Viso Ftor
圧(Terminal to Base AC,1minute)
Module Base to Heatsink Busbar to Main Terminal
Isolation Voltage
締め付けトルク
Mounting Torque
□
Collector-Emitter Cut-Off Current
電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (TC=25℃) ELECTRICAL Characteristic Symbol Test Condition コレクタ遮断電流 ICES VCE = 600V, VGE = 0V ゲート漏れ電流 IGES VCE(sat) VGE(th) Cies
上 昇 時 間 Rise Time
Min. − − − 4.0 − − − − −
Typ. − − 2.1 − 10,000 0.15 0.25 0.20 0.45
Max. Unit 1.0 1.0 2.6 8.0 − 0.30 0.40 0.35 0.70 mA µA V V pF
Gate-Emitter Leakage Current
VGE = ±20V, VCE = 0V IC = 100A, VGE = 15V VCE = 5V, IC = 100mA VCES = 10V, VGE = 0V,f= 1MHz VCC RL RG VGE = = = = 300V 3Ω 7.5Ω ±15V
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
ゲートしきい値電圧
Gate-Emitter Threshold Voltage
入
力
容
量
Input Capacitance
ス イ ッ チ ン グ 時 間 ターンオン時間 Turn-on Time
Switching Time 下 降 時 間 Fall Time ターンオフ時間 Turn-off Time
tr ton tf toff
µs
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) FREE DIODE Item Symbol Rated Value Unit DC IF 100 順 電 流 A Forward Current 1ms IFM 200 Characteristic 電 圧 回 復 時 間 Symbol VF trr Test Condition IF = 100A, VGE = 0V IF = 100A, VGE = -10V di/dt = 100A/µs Min. − − Typ. 1.9 Max. Unit 2.4 V µs
順 逆 □ 熱 熱
Peak Forward Voltage Reverse Recovery Time
0.15 0.25
Thermal Impedance
THERMAL 的 特 性 : THERMAL CHARACTERISTICS Characteristic Symbol Test Condition IGBT 抵 抗 Rth(j-c) Junction to Case
Doe id
Min. − −
Typ. − −
Max. Unit 0.31 ℃/W 0.65
PCHMB100A6A PCHMB100A6A
Fig.1- Output Characteristics (Typical)
200
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25 ℃
16
TC=25 ℃
VGE =20V
12V
I C=40A
200A
Collector to Emitter Voltage V CE ( V)
15V 10V
14 12 10 8 6 4 2 0
100A
Collector Current I C ( A)
150
100
9V
50
8V 7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage V CE ( V)
Gate to Emitter Voltage V GE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350 300 250 200 16
TC=125 ℃ IC=40A
200A
Collector to Emitter Voltage V CE ( V)
100A
12 10 8 6 4 2 0
Collector to Emitter Voltage V CE ( V)
14
R L=3 Ω TC=25 ℃
14
Gate to Emitter Voltage V GE ( V)
12 10 8
VCE =300V
150 6
200V
100
100V
50 0
4 2 0
0
4
8
12
16
20
0
100
200
300
400
Gate to Emitter Voltage V GE ( V)
Total Gate Charge Qg ( nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000 20000 10000 1
Fig.6- Collector Current vs. Switching Time (Typical)
VCC=300V R G=7.5 Ω VGE = ± 15V TC=25 ℃
Cies Coes Cres
VGE =0V f=1MHZ TC=25 ℃
0.9 0.8
Switching Time t ( μ s)
Capacitance C ( pF)
5000 2000 1000 500 200 100 50 0.2 0.5 1 2 5 10 20 50 100 200
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80
toff
ton tf tr
100
Collector to Emitter Voltage V CE ( V)
Collector Current IC ( A)
PCHMB100A6A PCHMB100A6A
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
200
(Typical)
TC=25 ℃
180 160
2
V CC=300V I C=100A V G= ± 15V TC=25 ℃
TC=125 ℃
Switching Time t ( μ s)
Forward Current I F ( A)
toff ton
1
140 120 100 80 60 40
tr
0.5
tf
0.2
0.1
20
0.05
1
10
100
0
0
1
2
3
4
Series Gate Impedance R G ( Ω )
Forward Voltage V F ( V)
Fig.9- Reverse Recovery Characteristics (Typical)
500 1000
Fig.10- Reverse Bias Safe Operating Area (Typical)
500 200
Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr ( ns)
IF=100A TC=25 ℃
200
R G=7.5 Ω V GE = ± 15V TC≦ 125 ℃
Collector Current I C ( A)
trr
100
100 50 20 10 5 2 1 0.5 0.2
50
20
10
I RrM
5
0
100
200
300
400
500
600
0.1
0
200
400
600
800
-di/dt ( A/μ s)
Collector to Emitter Voltage V CE ( V)
Fig.11- Transient Thermal Impedance
1
( ℃ /W)
5x10 -1 2x10 1x10
-1
FRD IGBT
(J-C)
Transient Thermal Impedance Rth
-1
5x10 -2 2x10 -2 1x10 -2 5x10 -3
TC=25 ℃
2x10 -3 1x10 -3 -5 10 10 -4 10 -3 10 -2 10 -1
1 Shot Pulse
1 10 1
Time t ( s)
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