PCHMB300B12

IGBT MODULE Chopper 300A 1200V MODULE Chopper CIRCUIT OUTLINE DRAWING PCHMB300B12 PCHMB300B12 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 450g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PCHMB300B12 1200 +/ - 20 300 600 1600 -40 to +150 -40 to +125 2500 3 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=300A,VGE=15V VCE=5V,IC=300mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 2 ohm RG= 1.3 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 25000 0.25 0.40 0.25 0.80 Max. 6.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 300 400 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=300A,VGE=0V IF=300A,VGE=-10V,di/dt=600A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.086 0.16 PCHMB300B12 Fig.1- Output Characteristics (Typical) 600 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ IC=100A 600A VGE =20V 500 12V 10V 15V Collector to Emitter Voltage V CE ( V) 14 12 10 8 6 4 2 0 300A Collector Current I C ( A) 400 9V 300 200 8V 100 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE ( V) Gate to Emitter Voltage V GE ( V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 ℃ I C=150A 600A Collector to Emitter Voltage V CE ( V) Collector to Emitter Voltage V CE (V) 14 R L=2Ω TC=25℃ 14 Gate to Emitter Voltage VGE (V) 300A 12 10 8 6 4 2 0 12 10 8 V CE=600V 300 6 400V 200 100 0 0 400 800 1200 1600 2000 200V 4 2 0 2400 0 4 8 12 16 20 Gate to Emitter Voltage V GE ( V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 Fig.6- Collector Current vs. Switching Time (Typical) 1.4 1.2 Cies 20000 VGE =0V f=1MHZ TC=25 ℃ VCC=600V R G=1.3 Ω VGE = ± 15V TC=25 ℃ Switching Time t ( μ s) Capacitance C ( pF) 1 0.8 0.6 0.4 0.2 10000 5000 2000 1000 500 200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 tOFF Coes tf Cres 0 tON tr 0 50 100 150 200 250 300 Collector to Emitter Voltage V CE (V) Collector Current IC ( A) PCHMB300B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 (Typical) 600 VCC=600V IC=300A VGE=±15V TC=25℃ TC=25 ℃ TC=125 ℃ 500 toff ton 2 1 0.5 Forward Current I F ( A) 50 100 Switching Time t (μs) 400 tr 300 tf 0.2 0.1 0.05 200 100 0.5 1 2 5 10 20 0 0 1 2 3 4 Series Gate Impedance RG (Ω) Forward Voltage V F ( V) Fig.9- Reverse Recovery Characteristics (Typical) 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 5000 2000 1000 500 Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr ( ns) 500 IF=300A TC=25 ℃ R G=1.3Ω VGE=±15V TC≦125℃ Collector Current I C (A) 200 100 50 trr 200 100 50 20 10 20 2 1 0.5 0.2 I RrM 10 5 0 600 1200 1800 2400 0.1 0 400 800 1200 1600 -di/dt ( A/μ s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 5x10 -1 (℃/W) 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 2x10 -4 FRD IGBT Transient Thermal Impedance Rth (J-C) TC=25℃ 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 10 -5 Time t (s)