PCHMB50B12

IGBT MODULE Chopper MODULE Chopper CIRCUIT 50A 1200V OUTLINE DRAWING PCHMB50B12 PCHMB50B12 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PCHMB50B12 1200 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 12 ohm RG= 20 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 4200 0.25 0.40 0.25 0.80 Max. 1.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 50 100 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=50A,VGE=0V IF=50A,VGE=-10V,di/dt=100A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.43 0.7 PCHMB50B12 Fig.1- Output Characteristics (Typical) 100 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ I C=25A 100A VGE =20V 15V 12V 10V Collector to Emitter Voltage V CE ( V) 14 12 10 8 6 4 2 0 50A Collector Current I C ( A) 75 9V 50 8V 25 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE ( V) Gate to Emitter Voltage V GE ( V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 ℃ IC=25A 100A Collector to Emitter Voltage V CE ( V) Collector to Emitter Voltage V CE ( V) 14 RL=12Ω TC=25℃ 14 Gate to Emitter Voltage V GE ( V) 50A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 100 0 0 50 100 150 200 250 300 350 200V 4 2 0 0 4 8 12 16 20 Gate to Emitter Voltage V GE ( V) Total Gate Charge Qg ( nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 20000 10000 5000 1.4 Fig.6- Collector Current vs. Switching Time (Typical) VCC=600V R G=20Ω VGE=±15V TC=25℃ Cies VGE=0V f=1MHZ TC=25℃ 1.2 1 0.8 0.6 0.4 0.2 0 tOFF 2000 1000 500 200 100 50 20 Coes Switching Time t (μs) Capacitance C (pF) tf Cres tON tr 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0 10 20 30 40 50 Collector to Emitter Voltage VCE (V) Collector Current IC (A) PCHMB50B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 (Typical) 100 90 VCC=600V IC=50A VGE=±15V TC=25℃ TC=25℃ TC=125℃ toff ton tr 80 Switching Time t (μs) 2 1 0.5 Forward Current I F (A) 300 70 60 50 40 30 20 tf 0.2 0.1 0.05 10 5 10 20 50 100 200 0 0 1 2 3 4 Series Gate Impedance RG (Ω) Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 500 Fig.10- Reverse Bias Safe Operating Area (Typical) R G=20Ω VGE=±15V TC≦125℃ Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr ( ns) IF=50A TC=25 ℃ trr 200 100 200 100 50 Collector Current I C (A) IRrM 50 20 10 5 2 1 0.5 20 10 5 2 1 0 0.2 50 100 150 200 250 300 0.1 0 400 800 1200 1600 -di/dt ( A/μ s) Collector to Emitter Voltage V CE (V) fig11-Tansient Thermal Impedance 5 Tansient Thermal Impedance Rth (J-C) (ﾟC/W) 2 1 5x10 2x10 10 -1 FRD IGBT -1 -1 -2 5x10 2x10 10 -2 -2 -3 Tc=25℃ 1 Shot -5 5x10 2x10 -3 10 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t （s）