PD10M441L

MOSFET MODULE MODULE FEATURES * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation Dual Dual 70A 450V/500V PD10M441L PD10M441L / PD10M440L OUTLINE DRAWING 108.0 Dimension(mm) TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating Circuit MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 220g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR PD10M441L 450 +/ - 20 70 (Tc=25°C) 50 (Tc=25°C) 140 Tc=25°C) 500 Tc=25°C) -40 to +150 -40 to +125 2000 3.0 2.0 PD10M440L 500 Unit V V A A W °C °C V N•m Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125°C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=40A VDS=15V, ID=40A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=40A VGS= -5V, +10V RG= 7ohm Min. 2.0 - Typ. 3.1 75 65 13 2.2 0.45 140 110 300 50 Max. 1.0 4.0 4.0 1.0 85 - Unit mA V µA m-ohm S nF nF nF ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=70A IS=70A, -dis/dt=100A/µs Min. - Typ. 1100 36 Max. 50 140 2.0 - Unit A A V ns µC Unit °C/W THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f) Test Condition MOS FET Diode Mounting surface flat, smooth, and greased Min. - Typ. - Max. 0.25 0.25 0.1 PD10M44xL 108.0 PD10M440L/441L, P2H10M440L/441L . Fig.1- Output Characteristics (Typical) 120 Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical) TC=25 ℃ 12 250 μ s PULSE TEST VGE =10V 6V TC=25 ℃ 250 μ s PULSE TEST 80 Drain to Source Voltage V DS ( V) 100 10 DrainCurrent I D (A) 8 ID=85A 60 6 40 5V 4 ID=40A 2 20 ID=20A 0 0 2 4 6 8 4V 0 10 12 0 2 4 6 8 10 12 14 16 Drain to Source Voltage V DS ( V) Gate to Source Voltage V GS ( V) Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical) 20 Fig.4- Capacitance vs. Drain to Source Voltage (Typical) 30 VGS=10V 250μs PULSE TEST VGS=0V f=1MHZ TC=25 ℃ 24 Drain to Source Voltage V DS ( V) 16 12 Capacitance C ( nF) ID=85A 18 Ciss 8 ID=40A 12 Coss 6 4 ID=20A Crss 0 -40 0 40 80 120 160 0 1 3 10 30 100 Junction Temperature Tj (℃) Drain to Source Voltage V DS ( V) Fig.5- Gate Charge vs. Gate to Source Voltage (Typical) 16 Fig.6- Series Gate Impedance vs. Switching Time (Typical) 10 ID=50A VDD=100V 14 VDD=250V Gate to Source Voltage V GS ( V) VDD=250V ID=40A TC=25 ℃ 80 μs Pulse Test 10 8 6 4 2 0 0 100 200 300 400 500 600 Switching Time t ( μ s) 12 VDD=400V 3 1 0.3 toff ton 0.1 1 2 5 10 20 50 100 200 Total Gate Charge Qg ( nC) Series Gate Impedance R G ( Ω ) PD10M440L/441L,P2H10M440L/441L Fig.7- Drain Current vs. Switching Time (Typical) 1000 Fig.8- Source to Drain Diode Forward Characteristics (Typical) 120 250 μ s PULSE TEST td(off) 100 Switching Time t ( μ s) Source Current I S (A) 300 80 td(on) 100 TJ=125 ℃ 60 tr tf TJ=25 ℃ 40 30 VDD=250V RG=7 Ω TC=25 ℃ 80 μ s Pulse Test 2 3 10 30 100 200 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain Current ID ( A) Source to Drain Voltage V SD ( V) . 2000 Fig.9- Reverse Recovery Characteristics (Typical) 500 Fig.10- Maximum Safe Operating Area Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr (ns) trr 1000 200 100 500 10 μs Drain Current I D (A) 50 100 μ s 200 20 10 Operation in this area is limited by R DS(on) 1ms 100 I RrM 5 2 10ms 50 …I S=40A ―I S=70A TJ=150 ℃ 20 0 100 200 300 400 500 600 1 0.5 1 TC=25 ℃ Tj=150 ℃ MAX Single Pulse 3 10 30 100 DC 441L 440L 300 1000 -dis/dt (A/ μ s) . . Drain to Source Voltage V DS ( V) Fig.11- Normalized Transient Thermal Impedance (MOSFET) Normalized Transient Thermal Impedance [rth (J-C)/Rth (J-C) ] 1x10 1 3 1 3x10 -1 1x10 -1 3x10 -2 1x10 -2 10 -5 Per Unit Base Rth(j-c)= 0.25℃/W 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 PULSE DURATION t (s)