PD4M440H

MOSFET MODULE MODULE FEATURES * Dual MOS FETs Cascaded Circuit Dual Dual 30A 450V/500V PD4M441H PD4M441H / PD4M440H OUTLINE DRAWING Dimension(mm) * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel * 300KHz High Speed Switching Possible 108.0 Circuit TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 220g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR PD4M441H 450 +/ - 20 30 (Tc=25°C) 21 (Tc=25°C) 60 Tc=25°C) 230 Tc=25°C) -40 to +150 -40 to +125 2000 3.0 2.0 PD4M440H 500 Unit V V A A W °C °C V N•m Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125°C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=15A VGS=10V, ID=15A VDS=15V, ID=15A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=15A VGS= -5V, +10V RG= 7ohm Min. 2.0 - Typ. 3.2 190 3.3 27 5.2 1.1 0.18 100 60 180 50 Max. 1.0 4.0 4.0 1.0 210 3.5 - Unit mA V µA m-ohm V S nF nF nF ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=30A IS=30A, -dis/dt=100A/µs Min. - Typ. 100 0.15 Max. 21 60 1.8 - Unit A A V ns µC Unit °C/W THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f) Test Condition MOS FET Diode Mounting surface flat, smooth, and greased Min. - Typ. - Max. 0.56 2.0 0.1 PD4M44xH 108.0 Fig. 1 Typical Output Characteristics TC=25℃ 250μs Pulse Test Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature 50 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) TC=25℃ 250μs Pulse Test 16 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) VGS=10V 250μs Pulse Test 40 DRAIN CURRENT ID (A) 10V 6V ID=30A ID=30A 6 12 30 4 15A 10A 8 15A 10A 20 VGS=5V 2 4 10 0 0 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) 12 0 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16 0 -40 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) ℃ 160 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage VGS=0V f=1kHz Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance ID=20A VDD= 100V 250V 400V 12 16 5 ID=15A VDD=250V TC=25℃ 80μs Pulse Test 10 CAPACITANCE C (nF) GATE TO SOURCE VOLTAGE VGS (V) 2 SWITCHING TIME t (μs) 12 8 Ciss 1 6 8 0.5 toff 4 Coss 0.2 ton 4 2 Crss 0.1 0 0.05 0 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 100 0 40 80 120 160 200 TOTAL GATE CHRAGE Qg (nC) 240 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG (Ω )   200 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics Fig. 9 Typical Reverse Recovery Characteristics IS=30A  IS=15A Tj=150℃ 1000 RG=7Ω VDD=250V TC=25℃ 80μs Pulse Test 60 250μs Pulse Test 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 500 SOURCE CURRENT IS (A) SWITCHING TIME t (ns) 50 200 trr 200 td(off) td(on) tr 40 100 100 30 Tj=125℃ Tj=25℃ 50 IR 50 tf 20 20 20 10 10 10 1 2 5 10 20 DRAIN CURRENT ID (A) 50 0 0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE VSD (V) 2 10 0 5 2 10 -1 5 2 1.6 5 0 100 200 300 400 -dis/dt (A/μs) 500 600 200 TC=25℃ Tj=150℃MAX Single Pulse Operation in this area 100 is limited by RDS (on) 50 DRAIN CURRENT ID (A) 20 10 5 2 1 0.5 0.2 10μs 100μs NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] Fig. 10 Maximum Safe Operating Area Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) Per Unit Base Rth(j-c)=0.56℃/W 1 Shot Pulse 10 -2 -5 10 10 -4 1ms 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 10ms DC −441H −440H 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) 2 10 0 5 2 10 -1 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) Per Unit Base Rth(j-c)=2.0℃/W 1 Shot Pulse 1 2 10 0 10 1