PD50F6

FRD MODULE FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 50A/600V/trr:100nsec PD50F6 PD50F6 OUTLINE DRAWING TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings Voltage Voltage Rating Repetitive Peak Reverse Voltage per Arm Symbol VRRM Approx Net Weight:105g PD50F6 500 Unit V Electrical Electr Electrical Rating Average Rectified Output Current RMS Forward Current Surge Forward Current I Squared t Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Mounting torque IO IF(RMS) IFSM I2t Tjw Tstg Viso Ftor Condition Condition 50Hz Half Sine Wave condition per Arm Tc=89°C per Arm 50 Hz Half Sine Wave,1cycle Non-repetitive per Arm 2 msec to 10 msec per Arm Rating 50 78 800 A A A 3200 A2s -40 to +150 °C -40 to +125 °C Base Plate to Terminal, AC1min 2000 V Case mounting(recommended) 2.6 N•m Terminal Screw(recommended) 1.4 Electrical • Thermal Characteristics Characteristics Peak Forward Voltage Peak Reverse Current Reverse Recovery Time Thermal Resistance Internal Lead Inductance Symbol VFM IRM Test Conditions Max. Unit 1.50 10 100 0.8 0.1 30 V mA ns °C/W nH IFM= 50A, Tj=25°C, per Arm VRM= VRRM, Tj= 150°C, per Arm IFM= 10A, -di/dt= 50 A/µs, Ta= 25°C trr Per Arm Rth(j-c) Junction to Case per Arm Base Plate to Heat Sink with Thermal Rth(c-f) Compound Anode Terminal to Cathode Terminal Ls Per Element PD50F6 OUTLINE DRAWING (Dimensions in mm)