PD7M440H

MOSFET MODULE MODULE FEATURES * Dual MOS FETs Cascaded Circuit Dual Dual 50A 450V/500V PD7M441H PD7M441H / PD7M440H OUTLINE DRAWING Dimension(mm) 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel * 300KHz High Speed Switching Possible Circuit TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 220g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR PD7M441H 450 +/ - 20 50 (Tc=25°C) 35 (Tc=25°C) 100 Tc=25°C) 350 Tc=25°C) -40 to +150 -40 to +125 2000 3.0 2.0 PD7M440H 500 Unit V V A A W °C °C V N•m Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125°C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=25A VGS=10V, ID=25A VDS=15V, ID=25A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=25A VGS= -5V, +10V RG= 7ohm Min. 2.0 - Typ. 3.1 110 3.2 45 9.0 1.7 0.32 120 80 240 50 Max. 1.0 4.0 4.0 1.0 120 3.4 - Unit mA V µA m-ohm V S nF nF nF ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=50A IS=50A, -dis/dt=100A/µs Min. - Typ. 100 0.15 Max. 35 100 1.9 - Unit A A V ns µC Unit °C/W THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f) Test Condition MOS FET Diode Mounting surface flat, smooth, and greased Min. - Typ. - Max. 0.36 2.0 0.1 PD7M44xH 108.0 Fig. 1 Typical Output Characteristics TC=25℃ 250μs Pulse Test Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature 80 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) TC=25℃ 250μs Pulse Test 16 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) VGS=10V 250μs Pulse Test ID=50A 10V 6V ID=50A DRAIN CURRENT ID (A) 60 6 12 40 4 25A 8 25A VGS=5V 20 2 15A 4 15A 0 0 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) 12 0 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16 0 -40 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) ℃ 160 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage VGS=0V f=1kHz Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance ID=35A 18 16 VDD= 100V 250V 400V 10 ID=25A VDD=250V TC=25℃ 80μs Pulse Test 15 CAPACITANCE C (nF) GATE TO SOURCE VOLTAGE VGS (V) 5 SWITCHING TIME t (μs) 12 12 Ciss 2 1 9 8 6 Coss 0.5 toff ton 4 3 Crss 0.2 0 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 100 0 0 80 160 240 320 400 TOTAL GATE CHRAGE Qg (nC) 480 0.1 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG (Ω )   200 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics Fig. 9 Typical Reverse Recovery Characteristics IS=50A  IS=25A Tj=150℃ 1000 RG=7Ω VDD=250V TC=25℃ 80μs Pulse Test 120 250μs Pulse Test 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 500 SWITCHING TIME t (ns) td(off) 100 SOURCE CURRENT IS (A) 200 trr 200 td(on) 80 100 100 tr tf 60 Tj=125℃ Tj=25℃ 50 IR 50 40 20 20 10 20 10 1 2 5 10 20 DRAIN CURRENT ID (A) 50 100 0 0 0.3 0.6 0.9 1.2 1.5 SOURCE TO DRAIN VOLTAGE VSD (V) 2 10 0 5 2 10 -1 5 2 1.8 5 0 100 200 300 400 -dis/dt (A/μs) 500 600 200 TC=25℃ Tj=150℃MAX Single Pulse Operation in this area is limited by RDS (on) 100 10μs 50 DRAIN CURRENT ID (A) 100μs NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] Fig. 10 Maximum Safe Operating Area Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) 20 10 5 1ms Per Unit Base Rth(j-c)=0.36℃/W 1 Shot Pulse Ｍ Ｏ Ｓ Ｆ Ｅ Ｔ モ ジ ュ ー ル 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 2 1 10ms DC Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 2 10 0 5 2 10 -1 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) Per Unit Base Rth(j-c)=2.0℃/W 1 Shot Pulse 0.5 0.2 −441H −440H 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) 1 2 10 0 10 1