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PDH15116

PDH15116

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    PDH15116 - THYRISTOR MODULE 150A / 1600V - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
PDH15116 数据手册
THYRISTOR MODULE 150A / 1600V PDT15116 PDH15116 OUTLINE DRAWING FEATURES * 108mm Short Size Case * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PDT TYPICAL APPLICATIONS * Rectified For General Use PDH Maximum Ratings Parameter Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:280g Symbol VDRM VDSM VRRM VRSM Grade PDT/PDH15116 Unit V V Max Max Rated Value 1600 1700 1600 1700 Parameter Parameter Average Rectified Output Current RMS On-State Current Surge On-State Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm IO(AV) IT(RMS) ITSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions Conditions 50Hz Half Sine Wave condition Tc=73°C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=300mA, diG/dt=0.2A/µs • Unit A A A A2s A/µs 150 235 3200 51200 100 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.5 to 3.5 N•m M6 Screw 2.5 to 3.5 Electrical • Thermal Characteristics Characteristics Peak Off-State Current Peak Reverse Current Peak Forward Voltage Gate Current to Trigger Symbol IDM IRM VTM IGT Test Conditions VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 450A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=300mA, diG/dt=0.2A/µs Maximum Value. Min. Typ. Max. 50 50 1.38 300 150 80 5 3 2 0.25 500 100 6 2 4 120 80 0.25 0.15 Unit mA mA V mA Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm VGT VGD dv/dt tq tgt td tr IL IH Rth(j-c) V V V/µs µs µs µs µs mA Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound °C/W PDT/PDH15116 OUTLINE DRAWING (Dimensions in mm) ON-STATE ON-STATE CURRENT VS. VOLTAGE PDT/PDH15116 5000 2000 1000 500 INSTANTANEOUS ON-STATE CURRENT (A) 200 100 50 20 Tj=25°C Tj=125°C 10 5 2 0 1 2 3 4 5 INSTANTANEOUS ON-STATE VOLTAGE (V) AVERAGE ON-STATE POWER DISSIPATION for 300 PDT/PDH15116 D.C. AVERAGE ON-STATE POWER DISSIPATION (W) 250 θ =180° 200 120° 90° θ =180° 120° 90° 150 30° 30° 60° 60° 100 50 0.02s I TSM 0 0 40 80 120 160 200 240 AVERAGE ON-STATE CURRENT (A) 180° θ CONDUCTION ANGLE 0° AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE (50Hz SINUSOIDAL CURRENT WAVEFORM) θ=180° 160 PDT/PDH15116 140 AVERAGE ON-STATE CURRENT (A) 120° 120 90° 100 60° 80 30° 60 40 20 0 0 25 50 75 100 125 CASE TEMPERATURE (°C) 180° θ CONDUCTION ANGLE 0° AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE (50Hz RECTANGULAR CURRENT WAVEFORM) PDT/PDH15116 240 D.C. AVERAGE ON-STATE CURRENT (A) 200 θ=180° 160 120° 120 90° 60° 80 30° 40 0 0 25 50 75 100 125 CASE TEMPERATURE (°C) - 40 C 25 C 12 5C P GM =5W f >50Hz duty< 20% SURGE CURRENT RATINGS f=50Hz,Harf Sine Wave,Non-Repetitive,On Load 3500 PDT/PDH15116 3000 2500 SURGE ON-STATE CURRENT (A) 2000 1500 1000 500 I TSM 0.02s 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s)
PDH15116 价格&库存

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