THYRISTOR MODULE
400A/800V
PDT4008 PDH4008
FEATURES
* Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit PDT * High Surge Capability * UL Recognized, File No. E187184
OUTLINE DRAWING
TYPICAL APPLICATIONS
* Rectified For General Use PDH
Maximum Ratings
Parameter Parameter
Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage
Approx Net Weight:1350g
Symbol VDRM VDSM VRRM VRSM
Grade
PDT/PDH4008
Unit
V V
Max Max Rated Value
800 900 800 900
Parameter Parameter
Average Rectified Output Current RMS On-State Current Surge On-State Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm IO(AV) IT(RMS) ITSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor
Conditions Conditions
50Hz Half Sine Wave condition Tc=63°C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=300mA, diG/dt=0.2A/µs
•
Unit
A A A A2s A/µs
400 630 7500 281000 100
5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2000 V M6 Screw 2.4 to 3.5 N•m M8 Screw 9.0 to 10.0
Electrical • Thermal Characteristics
Characteristics
Peak Off-State Current Peak Reverse Current Peak Forward Voltage Gate Current to Trigger Symbol IDM IRM VTM IGT Test Conditions VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 1300A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C VD=2/3VDRM Tj=125°C IG=300mA, diG/dt=0.2A/µs Maximum Value. Min. Typ. Max. 50 50 1.35 300 150 80 5 3 2 0.25 500 100 6 2 4 150 60 0.12 0.05 °C/W Unit mA mA V mA
Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm
VGT VGD dv/dt tq tgt td tr IL IH Rth(j-c)
V V V/µs µs µs µs µs mA
Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound
PDT/PDH4008 OUTLINE DRAWING (Dimensions in mm)
PDT
PDH
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