PDMB100A6

IGBT MODULE MODULE CIRCUIT Dual Dual 100A 600V PDMB100A6 PDMB100A6 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB100A6 600 +/ - 20 100 200 400 -40 to +150 -40 to +125 2500 2 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 10,000 0.15 0.25 0.2 0.45 Max. 1.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 100 200 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=100A/µs Min. - Max. 2.4 0.25 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.31 0.65 PDMB100A6 Fig.1- Output Characteristics (Typical) 200 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ VGE =20V 12V IC =40A 200A Collector to Emitter Voltage V CE ( V) 15V 10V 14 12 10 8 6 4 2 0 100A Collector Current I C ( A) 150 100 9V 50 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE ( V) Gate to Emitter Voltage V GE ( V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 300 250 200 16 TC=125 ℃ I C=40A 200A Collector to Emitter Voltage V CE ( V) 100A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE ( V) 14 R L=3 Ω TC=25 ℃ 14 Gate to Emitter Voltage V GE ( V) 12 10 8 VCE =300V 150 6 200V 100 100V 50 0 4 2 0 0 4 8 12 16 20 0 100 200 300 400 Gate to Emitter Voltage V GE ( V) Total Gate Charge Qg ( nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 20000 10000 1 Fig.6- Collector Current vs. Switching Time (Typical) VCC=300V RG=7.5 Ω VGE = ± 15V TC=25 ℃ Cies Coes Cres V GE =0V f=1MHZ TC=25 ℃ 0.9 0.8 Switching Time t ( μ s) Capacitance C ( pF) 5000 2000 1000 500 200 100 50 0.2 0.5 1 2 5 10 20 50 100 200 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 toff ton tf tr 100 Collector to Emitter Voltage V CE ( V) Collector Current IC ( A) PDMB100A6 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 200 (Typical) TC=25 ℃ 180 160 2 VCC=300V I C=100A VG= ±15V TC=25 ℃ TC=125 ℃ Switching Time t ( μ s) Forward Current I F ( A) toff ton 1 140 120 100 80 60 40 tr 0.5 tf 0.2 0.1 20 0.05 1 10 100 0 0 1 2 3 4 Series Gate Impedance R G ( Ω) Forward Voltage V F (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 500 200 Peak Reverse Recovery Current I RrM ( A) Reverse Recovery Time trr ( ns) IF=100A TC=25 ℃ 200 RG=7.5 Ω VGE = ±15V TC≦125 ℃ Collector Current I C ( A) trr 100 100 50 20 10 5 2 1 0.5 0.2 50 20 10 I RrM 5 0 100 200 300 400 500 600 0.1 0 200 400 600 800 -di/dt ( A/μs) Collector to Emitter Voltage V CE ( V) Fig.11- Transient Thermal Impedance 1 ( ℃ /W) 5x10 -1 2x10 -1 1x10 -1 FRD IGBT Transient Thermal Impedance Rth (J-C) 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25 ℃ 2x10 -3 1x10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 1 Shot Pulse 1 10 1 Time t ( s)